CRSD082N10L2

CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS2 technology VDS 100V • Extremely low on-resistance RDS(on) RDS(on)@10V typ 7.2mΩ • Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 9mΩ • Qualified according to JEDEC criteria ID 78A Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) 100% Avalanche Tested CRSD082N10L2 Package Marking and Ordering Information Part # Marking Package Packing CRSD082N10L2 - TO-252 Tape&Reel Reel Size Tape Width Qty N/A N/A 2500pcs Symbol Value Unit VDS 100 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 78 80 A 50 ID pulse 313 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 121 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 101 W Tj , T stg -55...+150 °C Operating junction and storage temperature Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 1 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 1.24 Thermal resistance, junction – ambient(min. footprint) RthJA 93.8 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 100 115 - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 1.4 1.8 2.2 V VDS=VGS,ID=250uA VDS=80V,VGS=0V Zero gate voltage drain current IDSS µA Tj=25°C - - 1 - - 10 - - ±100 nA 7.2 8.6 mΩ VGS=10V,ID=50A - 9.0 10.8 mΩ VGS=4.5V,ID=50A gfs - 91 - S VDS=5V,ID=50A Input Capacitance Ciss - 2626 - Output Capacitance Coss - 457 - pF Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz Crss - 38 - Gate Total Charge QG - 44.5 - Gate-Source charge Qgs - 10.4 - nC VGS=10V, VDS=50V, ID=50A, f=1MHz Gate-Drain charge Qgd - 6.8 - Turn-on delay time td(on) - 10.3 - tr - 62 - td(off) - 30 - ns VGS=10V, VDD=50V, RG_ext=3.0Ω tf - 98 - RG - 1.1 - Ω VGS=0V, VDS=0V, f=1MHz Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Transconductance Tj=125°C VGS=±20V,VDS=0V Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance Body Diode Characteristic Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 2 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=50A Body Diode Forward Voltage VSD - 0.93 1.4 V Body Diode Reverse Recovery Time trr - 64 - ns Body Diode Reverse Recovery Charge Qrr - 101 - nC Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited IF=50A, dI/dt=100A/µs Page 3 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 100 10V 280 7V 5V VDS=5V 240 80 4.5V ID (A) ID (A) 200 4V 160 60 125°C 40 120 25°C 3.5V 80 20 3V 40 2.5V 0 0 1 2 0 3 4 5 0 1 2 VGS (V) VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage RDS(on) (mΩ) RDS(on) (mΩ) ID=50A 20 8.0 VGS=10V 7.0 16 125°C 12 6.0 8 5.0 4 4.0 0 30 40 25°C 2 50 4 6 8 10 VGS (V) ID (A) Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 2.4 ID=50A Ciss C - Capacitance (PF) 2.2 RDS(on)_Normalized 5 Fig 4: Rds(on) vs Gate Voltage VGS=4.5V 20 4 24 10.0 9.0 3 2.0 1.8 VGS=10V 1.6 1.4 VGS=4.5V 1000 Coss 100 1.2 VGS=0V f=1MHz 1.0 Crss 10 0.8 25 50 75 100 125 150 0 10 20 Tj - Junction Temperature (°C) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited 30 40 50 60 VDS (V) Page 4 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 100 VGS (V) 8 IS - Diode Current(A) VDS=50V ID=50A 6 4 10 125˚C 25˚C 1 0.1 2 0.01 0 0 10 20 30 40 0 50 0.2 0.4 0.6 0.8 1 1.2 1.4 150 175 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 90 120 80 100 70 60 ID (A) Ptot (W) 80 60 50 40 30 40 VGS≥10V 20 20 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1us 100 Limited by Rds(on) 10us 100us ID (A) 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 5 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.2 ZthJC (˚C/W) 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 6 CRSD082N10L2 华润微电子(重庆)有限公司 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A Test Circuit & Waveform Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 7 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Package Outline: TO-252-3L Symbol A Dimensions In Millimeters Min. Max. Min. Max. 2 2.6 0.079 0.102 A1 0 0.15 0.000 0.006 A2 0.76 1.36 0.030 0.054 b 0.61 0.85 0.024 0.033 b1 0.71 0.91 0.028 0.036 b2 5.04 5.64 0.198 0.222 c 0.508 TYP. 0.02 TYP. c1 0.508 TYP. 0.02 TYP. 5.7 6.3 0.224 0.248 D1 5 5.6 0.197 0.220 E 6.3 6.9 0.248 0.272 E1 4.55 5.15 0.179 D e 2.286 TYP. 0.203 0.09 TYP. H 9.65 10.4 0.380 0.409 L 1.4 1.7 0.055 0.067 L1 2.90 REF. L2 0.75 L3 θ θ1 5° θ2 Rev 1.0 Dimensions In Inches 0.114 REF. 1.35 0.030 0.053 0.6 1.2 0.024 0.047 0° 10° 0° 10° 9° 5° 25° REF. 9° 25° REF. ©China Resources Microelectronics (Chongqing) Limited Page 8 CRSD082N10L2 SkyMOS2 N-MOSFET 100V, 7.2mΩ, 78A 华润微电子(重庆)有限公司 Revision History Revison Date 1.0 2018-08-14 Major changes Release of formal version. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 9