CRSQ113N20NZ

CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS3 technology VDS 200V • Extremely low on-resistance RDS(on) RDS(on) 8.8mΩ • Excellent QgxRDS(on) product(FOM) ID 110A • Qualified according to JEDEC criteria 100% Avalanche Tested 100% DVDS Tested Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) CRSQ113N20NZ Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width Qty CRSQ113N20NZ CRSQ113N20NZ TO-247 Tube N/A N/A 25pcs Symbol Value Unit VDS 200 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) ID TC = 25°C (Package limit) TC = 100°C (Silicon limit) 110 180 A 71 Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 440 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)[1] EAS 324 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 329 W Tj , T stg -55...+150 °C Operating junction and storage temperature ※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 36A, Vgs=10V. Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 1 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 0.38 Thermal resistance, junction – ambient(min. footprint) RthJA 45 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 200 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA VDS=200V,VGS=0V Zero gate voltage drain current IDSS - 1 - - 100 IGSS - ±10 ±100 nA VGS=±20V,VDS=0V RDS(on) - 8.8 10.6 mΩ VGS=10V, ID=60A gfs - 103.5 - S VDS=5V,ID=60A Input Capacitance Ciss 3512 5268 7902 Output Capacitance Coss 308 462 693 pF Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz Crss 16 24 36 Gate Total Charge QG 49 74 111 Gate-Source charge Qgs 20 30 45 nC VGS=10V, VDS=100V, ID=60A, f=1MHz Gate-Drain charge Qgd 11 16 24 Turn-on delay time td(on) 23 35 53 tr 74 111 167 td(off) 56 84 126 ns VGS=10V, VDD=100V, RG_ext=2.7Ω tf 75 112 168 RG 2 3.5 6 Ω VGS=0V, VDS=0V, f=1MHz Gate-source leakage current Drain-source on-state resistance Transconductance μA Tj=25°C - Tj=150°C Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance Body Diode Characteristic Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 2 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=60A Body Diode Forward Voltage VSD - 0.89 1.3 V Body Diode Reverse Recovery Time trr 75.4 150.8 301.6 ns Body Diode Reverse Recovery Charge Qrr 389.7 779.4 1558.8 nC Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited IF=60A, dI/dt=100A/us Vds=100V Page 3 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 10V 240 140 8V 7V 9V 280 6.5V 100 ID (A) ID (A) 200 160 80 60 5.5V 120 VDS=5V 120 125°C 40 80 40 20 VGS=4.5V 0 0 0 1 2 3 4 0 5 1 2 3 VDS (V) 4 5 6 7 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 10.0 Fig 4: Rds(on) vs Gate Voltage ID=60A 38 9.8 9.6 34 9.2 RDS(on) (mΩ) 9.4 RDS(on) (mΩ) 25°C VGS=8V 9.0 8.8 8.6 8.4 VGS=10V 8.2 8.0 30 26 150°C 22 18 7.8 14 7.6 7.4 25°C 10 7.2 6 7.0 10 20 30 40 50 60 70 80 90 4 100 5 6 ID (A) 9 10 10000 2.4 C - Capacitance (PF) ID=60A 2.2 2.0 1.8 VGS=10V 1.6 1.4 Ciss 1000 Coss 100 10 1.2 1 0.8 25 50 75 100 125 150 Crss VGS=0V f=1MHz 1.0 0 20 40 60 80 Tj - Junction Temperature (°C) Rev 1.0 8 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature RDS(on)_Normalized 7 VGS (V) ©China Resources Microelectronics (Chongqing) Limited 100 120 140 160 180 200 VDS (V) Page 4 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 IS - Diode Current(A) 8 VGS (V) 100 VDS=100V ID=60A 6 4 10 1 125˚C 25˚C 0.1 2 0.01 0 0 10 20 30 40 50 60 70 0 80 0.2 0.6 0.8 1 1.2 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 350 120 300 100 250 80 ID (A) Ptot (W) 0.4 200 60 150 40 100 20 50 VGS≥10V 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us Limited by Rds(on) 10us 100us ID (A) 100 1ms 10ms 10 DC 1 0.1 Single pulse Tc=25˚C 0.1 1 10 100 VDS (V) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 5 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 ZthJC (˚C/W) 0.1 0.01 0.2 0.1 0.05 0.02 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tp (sec) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 6 CRSQ113N20NZ 华润微电子(重庆)有限公司 SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A Test Circuit & Waveform Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 7 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Package Outline: TO-247 Symbol Dimensions In Millimeters Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 A2 1.50 2.49 0.059 0.098 b 1.04 1.33 0.041 0.052 b2 1.90 2.41 0.075 0.095 b4 2.87 3.43 0.113 0.135 c 0.55 0.70 0.022 0.028 D 20.70 21.30 0.815 0.839 D1 16.25 17.65 0.640 0.695 D2 0.51 1.40 0.020 e Rev 1.0 Dimensions In Inches Min. 5.44 BSC. 0.055 0.214 BSC. E 15.50 16.30 0.610 0.642 E1 13.08 14.16 0.515 0.557 E2 3.80 5.49 0.150 0.216 E3 1.00 2.75 0.039 0.108 L 19.72 20.32 0.776 0.800 L1 3.85 4.50 0.152 0.177 Q 5.25 6.25 0.207 0.246 P 3.50 3.70 0.138 0.146 S 6.04 6.30 0.238 0.248 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRSQ113N20NZ SkyMOS3 N-MOSFET 200V, 8.8mΩ, 110A 华润微电子(重庆)有限公司 Revision History Revison Date 1.0 2022/10/31 Major changes Release of Prelimnary version. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 9