CRSS038N08N

厂商：
IPS(华润微)
封装：
TO263
描述：
CRSS038N08N

数据手册：

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数据手册
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CRSS038N08N 数据手册

CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS1 technology VDS 85V • Extremely low on-resistance RDS(on) RDS(on) 3.4mΩ • Excellent QgxRDS(on) product(FOM) ID 120A • Qualified according to JEDEC criteria Applications • Motor control and drive 100% Avalanche Tested • Battery management • UPS (Uninterrupible Power Supplies) CRST041N08N CRSS038N08N Package Marking and Ordering Information Part # Marking Package CRST041N08N - TO-220 CRSS038N08N - TO-263 Reel Size Tape Width Qty Tube N/A N/A 50pcs Tube N/A N/A 50pcs Symbol Value Unit VDS 85 V Packing Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 172 120 A 109 ID pulse 480 A EAS(Note 1) 272 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 208 W Tj , T stg -55...+150 °C Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Operating junction and storage temperature ※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 33A, VGS = 10V. EAS(max)=1089mJ under IAS(max)=66A and above Conditions; ©China Resources Microelectronics (Chongqing) Limited Page 1 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 0.60 Thermal resistance, junction – ambient(min. footprint) RthJA 53 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 85 97 - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA VDS=80V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.05 1 - - 5 - 10 100 µA Tj=25°C Tj=125°C nA VGS=±20V,VDS=0V VGS=10V, ID=50A Drain-source on-state resistance RDS(on) - 3.4 4.1 - 3.2 3.8 gfs - 113 - Input Capacitance Ciss - 6050 - Output Capacitance Coss - 1480 - Reverse Transfer Capacitance Crss - 35 - Gate Total Charge QG - 74 - Gate-Source charge Qgs - 23 - Gate-Drain charge Qgd - 21 - Turn-on delay time td(on) - 32 - tr - 53 - td(off) - 59 - tf - 34 - RG - 3.3 - Transconductance mΩ TO-220 TO-263 S VDS=5V,ID=40A pF VGS=0V, VDS=42.5V, f=1MHz nC VGS=10V, VDS=42.5V, ID=50A, f=1MHz ns Vds=42.5V Id=10A Rg=3.5Ω Vgs=10V; (Note 2,3) Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=50A Body Diode Forward Voltage VSD - 0.9 1.4 V Body Diode Reverse Recovery Time trr - 76 - ns Body Diode Reverse Recovery Charge Qrr - 97 - nC IS=30A, VGS=0V, dIF/dt=100A/us; ※. Notes 2.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 3.Essentially independent of operating temperature. ©China Resources Microelectronics (Chongqing) Limited Page 3 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 100 100 6.0V VDS=5V 80 80 60 60 ID (A) ID (A) 10V 6.5V 5.5V 40 125°C 25°C 40 20 20 VGS=5.0V 0 0 1 2 3 4 0 5 0 1 VDS (V) VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 7.0 Fig 4: Rds(on) vs Gate Voltage 10 ID=50A 9 8 5.0 RDS(on) (mΩ) RDS(on) (mΩ) 6.0 VGS=10V 4.0 7 6 5 4 3.0 3 2 2.0 10 20 30 40 50 60 70 80 90 5 100 6 7 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 2.4 VGS=10V ID=50A 2.0 Ciss C - Capacitance (PF) 2.2 RDS(on)_Normalized 8 VGS (V) ID (A) 1.8 1.6 1.4 1.2 1.0 Coss 1000 100 0.8 Crss VGS=0V f=1MHz 0.6 10 0.4 25 50 75 100 125 150 175 0 10 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 20 30 40 50 VDS (V) Page 4 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 VDS=40V ID=50A VGS (V) 8 6 25˚C 125˚C 4 2 0 0 10 20 30 40 50 60 70 0 80 0.2 Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 140 250 120 200 ID (A) 100 Ptot (W) 150 80 60 100 40 VGS≥10V 50 20 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us Limited by Rds(on) 100 ID (A) 10us 100us 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.2 ZthJC (˚C/W) 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRST041N08N, CRSS038N08N 华润微电子(重庆)有限公司 SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 2.54 BSC. 0.100 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-263 Symbol Dimensions In Millimeters Min. Max. Dimensions In Inches Min. Max. A 4.30 4.86 0.169 0.191 A1 0.00 0.25 0.000 0.010 A2 2.34 2.79 0.092 0.110 b 0.68 0.94 0.027 0.037 b2 1.15 1.35 0.045 0.053 c 0.33 0.65 0.013 0.026 c2 1.17 1.40 0.046 0.055 D 8.38 9.45 0.330 0.372 D1 6.90 8.17 0.272 e E 2.54 BSC. 9.78 0.322 0.100 BSC. 10.50 0.385 0.413 E1 6.50 8.60 0.256 0.339 H 14.61 15.88 0.575 0.625 L 2.24 3.00 0.088 0.118 L1 0.70 1.60 0.028 0.063 L2 1.00 1.78 0.039 0.070 L3 0.00 0.25 0.000 0.010 ©China Resources Microelectronics (Chongqing) Limited Page 9 CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A 华润微电子(重庆)有限公司 Revision History Revison Date Major changes 1.0 2018-02-09 Release of formal version. 2.0 2019-05-27 Supplement package outline info. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 10

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CRSS038N08N

物料型号： - CRST041N08N - CRSS038N08N

器件简介： - 华润微电子(重庆)有限公司生产的SkyMOS1 N-MOSFET，85V，3.4mΩ，120A

引脚分配： - TO-220封装：S G D - TO-263封装：S G D

参数特性： - 漏源电压(VDS)：85V - 漏源电阻(RDS(on))：3.4mΩ - 连续漏极电流(ID)：120A/172A(硅极限) - 脉冲漏极电流(ID pulse)：480A - 雪崩能量(EAS)：272mJ

功能详解： - 使用CRM(CQ)先进的SkyMOS1技术 - 极低的导通电阻RDS(on) - 优秀的Qg × RDS(on)乘积(FOM) - 符合JEDEC标准的产品

应用信息： - 电机控制和驱动 - 电池管理 - 不间断电源(UPS)

封装信息： - TO-220和TO-263封装，具体尺寸和标记信息在文档中有详细描述。

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