CRSS042N10N

CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS1 technology VDS 100V • Extremely low on-resistance RDS(on) RDS(on) 3.6mΩ • Excellent QgxRDS(on) product(FOM) ID 120A • Qualified according to JEDEC criteria Applications • Motor control and drive 100% Avalanche Tested • Battery management • UPS (Uninterrupible Power Supplies) CRST045N10N CRSS042N10N Package Marking and Ordering Information Part # Marking Package CRST045N10N - TO-220 CRSS042N10N - TO-263 Reel Size Tape Width Qty Tube N/A N/A 50pcs Tube N/A N/A 50pcs Symbol Value Unit VDS 100 V Packing Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 172 120 A 109 ID pulse 480 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 256 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 227 W Tj , T stg -55...+150 °C Operating junction and storage temperature ©China Resources Microelectronics (Chongqing) Limited Page 1 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 0.55 Thermal resistance, junction – ambient(min. footprint) RthJA 62 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 100 115 - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA VDS=100V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.05 1 - - 10 - ±10 ±100 µA Tj=25°C Tj=125°C nA VGS=±20V,VDS=0V VGS=10V, ID=50A Drain-source on-state resistance RDS(on) - 3.6 4.5 - 3.4 4.2 gfs - 50 - Input Capacitance Ciss - 6772 - Output Capacitance Coss - 952 - Reverse Transfer Capacitance Crss - 33 - Gate Total Charge QG - 90 - Gate-Source charge Qgs - 28 - Gate-Drain charge Qgd - 19 - Turn-on delay time td(on) - 28 - tr - 32 - td(off) - 48 - tf - 27 - RG - 2 - Transconductance mΩ TO-220 TO-263 S VDS=5V,ID=50A pF VGS=0V, VDS=50V, f=1MHz nC VGS=10V, VDS=50V, ID=20A, f=1MHz ns VGS=10V, VDD=50V, RG_ext=3.0Ω Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=50A Body Diode Forward Voltage VSD - 0.89 1.3 V Body Diode Reverse Recovery Time trr - 80 - ns Body Diode Reverse Recovery Charge Qrr - 190 - nC ©China Resources Microelectronics (Chongqing) Limited IF=50A, dI/dt=100A/µs Page 3 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 400 100 360 VDS=5V 10V 320 80 8V 6.5V 240 200 ID (A) ID (A) 280 6.0V 160 60 125°C 25°C 40 120 5.5V 80 20 VGS=5.0V 40 0 0 0 1 2 3 4 5 0 1 2 3 VDS (V) 4 5 6 7 8 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage 7.0 20 6.0 16 RDS(on) (mΩ) RDS(on) (mΩ) ID=50A 5.0 VGS=10V 4.0 12 125°C 8 3.0 4 2.0 25°C 0 1.0 10 20 30 40 50 60 70 80 90 4 100 5 6 8 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 3.0 VGS=10V ID=50A Ciss C - Capacitance (PF) 2.5 RDS(on)_Normalized 7 VGS (V) ID (A) 2.0 1.5 1.0 1000 Coss 100 VGS=0V f=1MHz 0.5 Crss 10 0.0 -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 50 60 70 80 90 100 VDS (V) Page 4 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 100 VGS (V) 8 IS - Diode Current(A) VDS=50V ID=20A 6 4 10 125˚C 1 25˚C 0.1 2 0.01 0 0 10 20 30 40 50 60 70 80 90 0 100 0.2 0.4 0.6 0.8 1 1.2 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 140 250 120 200 ID (A) 100 Ptot (W) 150 80 60 100 40 VGS≥10V 50 20 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us ID (A) 100 Limited by Rds(on) 10us 100us 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.1 0.2 ZthJC (˚C/W) 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRST045N10N, CRSS042N10N 华润微电子(重庆)有限公司 SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 2.54 BSC. 0.100 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.30 4.86 0.169 0.191 A1 0.00 0.25 0.000 0.010 A2 2.34 2.79 0.092 0.110 b 0.68 0.94 0.027 0.037 b2 1.15 1.35 0.045 0.053 c 0.33 0.65 0.013 0.026 c2 1.17 1.40 0.046 0.055 D 8.38 9.45 0.330 0.372 D1 6.90 8.17 0.272 e 2.54 BSC. 0.322 0.100 BSC. E 9.78 10.50 0.385 0.413 E1 6.50 8.60 0.256 0.339 H 14.61 15.88 0.575 0.625 L 2.24 3.00 0.088 0.118 L1 0.70 1.60 0.028 0.063 L2 1.00 1.78 0.039 0.070 L3 0.00 0.25 0.000 0.010 ©China Resources Microelectronics (Chongqing) Limited Page 9 CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A 华润微电子(重庆)有限公司 Revision History Revison Date Major changes 1.0 2018-02-09 Release of formal version. 2.0 2019-05-28 Supplement package outline info. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 10