CRST033N08N

CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS1 technology VDS 85V • Extremely low on-resistance RDS(on) RDS(on) 2.5mΩ • Excellent QgxRDS(on) product(FOM) ID 160A • Qualified according to JEDEC criteria Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) CRST033N08N 100% Avalanche Tested CRSS031N08N Package Marking and Ordering Information Part # Marking Package CRST033N08N - TO-220 CRSS031N08N - TO-263 Reel Size Tape Width Qty Tube N/A N/A 50pcs Tube N/A N/A 50pcs Symbol Value Unit VDS 85 V Packing Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 208 160 A 131 ID pulse 640 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)[1] EAS 400 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 227 W Tj , T stg -55...+150 °C Operating junction and storage temperature Notes:1.EAS was tested at Tj = 25℃, ID = 40A. ©China Resources Microelectronics (Chongqing) Limited Page 1 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 0.55 Thermal resistance, junction – ambient(min. footprint) RthJA 62 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 85 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2.2 3 3.8 V VDS=VGS,ID=250uA VDS=80V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.05 1 - - 10 - ±10 ±100 µA Tj=25°C Tj=125°C nA VGS=±20V,VDS=0V VGS=10V, ID=80A Drain-source on-state resistance RDS(on) - 2.5 3.0 - 2.3 2.8 gfs - 144 - Input Capacitance Ciss - 8930 - Output Capacitance Coss - 1746 - Reverse Transfer Capacitance Crss - 81 - Gate Total Charge QG - 130 - Gate-Source charge Qgs - 44 - Gate-Drain charge Qgd - 30 - Turn-on delay time td(on) - 30 - tr - 108 - td(off) - 85 - tf - 120 - RG - 2.1 - Transconductance mΩ TO-220 TO-263 S VDS=5V,ID=80A pF VGS=0V, VDS=40V, f=1MHz nC VGS=10V, VDS=40V, ID=80A, f=1MHz ns VGS=10V, VDD=40V, RG_ext=3.0Ω Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Body Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Value Unit Test Condition 1.4 V VGS=0V,ISD=80A 84 - ns 226 - nC min. typ. max. VSD - 0.93 trr - Qrr - ©China Resources Microelectronics (Chongqing) Limited IF=80A, dI/dt=100A/µs Page 3 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 350 400 10V 360 8V 7V 320 6.5V 250 280 240 ID (A) ID (A) VDS=5V 300 200 150 5.5V 160 200 120 100 25°C 125°C 80 50 4.5V 40 0 0 3.5V 0 1 2 3 4 5 0 1 2 VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 5 6 7 Fig 4: Rds(on) vs Gate Voltage 12 4.0 3.5 ID=80A 10 VGS=10V RDS(on) (mΩ) 3.0 RDS(on) (mΩ) 3 4 VGS (V) 2.5 2.0 8 6 125°C 1.5 4 1.0 2 25°C 0.5 0 0.0 0 20 40 60 80 100 120 140 3 160 4 5 ID (A) 7 8 9 10 70 80 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 2.4 10000 Ciss C - Capacitance (PF) ID=80A 2.2 RDS(on)_Normalized 6 VGS (V) 2.0 1.8 VGS=10V 1.6 1.4 1000 Coss 100 1.2 VGS=0V f=1MHz 1.0 Crss 10 0.8 0 25 50 75 100 125 150 175 0 10 20 30 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 40 50 60 VDS (V) Page 4 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 100 VGS (V) 8 IS - Diode Current(A) VDS=40V ID=80A 6 4 10 125˚C 1 25˚C 0.1 2 0.01 0 0 30 60 90 120 0 150 0.2 0.4 0.6 0.8 1 1.2 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 180 250 160 200 140 ID (A) 120 Ptot (W) 150 100 80 100 60 VGS≥10V 40 50 20 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us ID (A) 100 Limited by Rds(on) 10us 100us 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.1 0.2 ZthJC (˚C/W) 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRST033N08N,CRSS031N08N 华润微电子(重庆)有限公司 SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 2.54 BSC. 0.100 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Package Outline: TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.30 4.86 0.169 0.191 A1 0.00 0.25 0.000 0.010 A2 2.34 2.79 0.092 0.110 b 0.68 0.94 0.027 0.037 b2 1.15 1.35 0.045 0.053 c 0.33 0.65 0.013 0.026 c2 1.17 1.40 0.046 0.055 D 8.38 9.45 0.330 0.372 D1 6.90 8.17 0.272 0.322 10.50 0.385 0.413 e E 2.54 BSC. 9.78 0.100 BSC. E1 6.50 8.60 0.256 0.339 H 14.61 15.88 0.575 0.625 L 2.24 3.00 0.088 0.118 L1 0.70 1.60 0.028 0.063 L2 1.00 1.78 0.039 0.070 L3 0.00 0.25 0.000 0.010 ©China Resources Microelectronics (Chongqing) Limited Page 9 CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A 华润微电子(重庆)有限公司 Revision History Revison Date Major changes 1.0 2018-09-13 Release of formal version. 2.0 2018-12-17 Add TO-263 information 3.0 2019-05-27 Supplement package outline info. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 10