CRST073N15N

CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS1 technology VDS 150V • Extremely low on-resistance RDS(on) RDS(on) 6.2mΩ • Excellent QgxRDS(on) product(FOM) ID 135A • Qualified according to JEDEC criteria Applications • Motor control and drive 100% Avalanche Tested • Battery management • UPS (Uninterrupible Power Supplies) CRST073N15N CRSS070N15N Package Marking and Ordering Information Part # Marking Package CRST073N15N - TO-220 CRSS070N15N - TO-263 Reel Size Tape Width Qty Tube N/A N/A 50pcs Tube N/A N/A 50pcs Symbol Value Unit VDS 150 V Packing Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 135 160 A 85 ID pulse 540 A EAS(Note 1) 380 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 227 W Tj , T stg -55...+150 °C Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Operating junction and storage temperature ※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 39A. ©China Resources Microelectronics (Chongqing) Limited Page 1 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Symbol Max Thermal resistance, junction – case. RthJC 0.55 Thermal resistance, junction – ambient(min. footprint) RthJA 60 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 150 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA VDS=150V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - - 1 - - 10 - - 100 µA Tj=25°C Tj=125°C nA VGS=±20V,VDS=0V VGS=10V, ID=60A Drain-source on-state resistance RDS(on) - 6.2 7.3 - 5.9 7.0 gfs - 106 - Input Capacitance Ciss - 5416 - Output Capacitance Coss - 572 - Reverse Transfer Capacitance Crss - 31 - Gate Total Charge QG - 79 - Gate-Source charge Qgs - 31 - Gate-Drain charge Qgd - 17 - Turn-on delay time td(on) - 18 - tr - 100 - td(off) - 59 - tf - 99 - RG - 4.0 - Transconductance mΩ TO-220 TO-263 S VDS=5V,ID=60A pF VGS=0V, VDS=75V, f=1MHz nC VGS=10V, VDS=75V, ID=60A, f=1MHz ns Vds=75V Id=100A Rg=2.7Ω Vgs=10V; Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=60A Body Diode Forward Voltage VSD - 0.9 1.4 V Body Diode Reverse Recovery Time trr - 122 - ns Body Diode Reverse Recovery Charge Qrr - 706 - nC ©China Resources Microelectronics (Chongqing) Limited ISD=60A, VGS=0V, dIF/dt=100A/us; Page 3 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 320 300 9.0V 10V 280 140 8.0V 120 260 240 7.0V 220 VDS=5V 100 ID (A) ID (A) 200 180 160 140 60 6.5V 120 80 100 40 80 60 40 0 0 1 2 3 25°C 20 5.5V VGS=4.5V 20 150°C 0 4 0 5 1 2 VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 8.0 4 5 7 9 10 29 ID=60A 25 RDS(on) (mΩ) 7.4 7.1 6.8 6.5 6.2 21 17 150°C VGS=10V 13 5.9 5.6 9 25°C 5.3 5 5.0 10 25 40 55 70 85 3 100 115 130 145 160 4 5 6 7 8 VGS (V) ID (A) Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 2.2 Ciss C - Capacitance (PF) VGS=10V ID=60A 2.0 RDS(on)_Normalized 6 Fig 4: Rds(on) vs Gate Voltage 7.7 RDS(on) (mΩ) 3 VGS (V) 1.8 1.6 1.4 1.2 1.0 1000 Coss 100 Crss 0.8 VGS=0V f=1MHz 0.6 10 0.4 25 50 75 100 125 150 0 30 60 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 90 120 150 VDS (V) Page 4 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 1000 VDS=75V ID=60A 8 VGS (V) 100 6 10 150˚C 4 25˚C 1 2 0.1 0 0 10 20 30 40 50 60 70 0 80 0.2 0.4 0.6 0.8 1 1.2 150 175 Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 160 250 140 200 ID (A) 120 Ptot (W) 150 100 100 80 60 40 VGS≥10V 50 20 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us 100 ID (A) 10us Limited by Rds(on) 100us 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 ZthJC (˚C/W) 0.1 D=0.5 0.01 0.2 0.1 0.05 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.02 0.01 0.001 0.00001 Single pulse 0.0001 0.001 0.01 0.1 1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 0.100 BSC. 2.54 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Package Outline: TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.30 4.86 0.169 0.191 A1 0.00 0.25 0.000 0.010 A2 2.34 2.79 0.092 0.110 b 0.68 0.94 0.027 0.037 b2 1.15 1.35 0.045 0.053 c 0.33 0.65 0.013 0.026 c2 1.17 1.40 0.046 0.055 D 8.38 9.45 0.330 0.372 D1 6.90 8.17 0.272 2.54 BSC. e 0.322 0.100 BSC. E 9.78 10.50 0.385 0.413 E1 6.50 8.60 0.256 0.339 H 14.61 15.88 0.575 0.625 L 2.24 3.00 0.088 0.118 L1 0.70 1.60 0.028 0.063 L2 1.00 1.78 0.039 0.070 L3 0.00 0.25 0.000 0.010 ©China Resources Microelectronics (Chongqing) Limited Page 9 CRST073N15N, CRSS070N15N SkyMOS1 N-MOSFET 150V, 6.2mΩ, 135A 华润微电子(重庆)有限公司 Revision History Revison Date Major changes 1.0 2019-02-15 Release of formal version. 2.0 2019-06-04 Supplement package outline info. Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 10