CRST085N15N

CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced SkyMOS1 technology VDS 150V • Extremely low on-resistance RDS(on) RDS(on) 7mΩ • Excellent QgxRDS(on) product(FOM) ID 120A • Qualified according to JEDEC criteria Applications • Motor control and drive 100% Avalanche Tested • Battery management • UPS (Uninterrupible Power Supplies) CRST085N15N CRSS082N15N Package Marking and Ordering Information Part # Marking Package CRST085N15N - TO-220 CRSS082N15N - TO-263 Reel Size Tape Width Qty Tube N/A N/A 50pcs Tube N/A N/A 50pcs Symbol Value Unit VDS 150 V Packing Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche Current (L=0.5mH) Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Repeative avalanche Current (L=0.5mH) Repeative avalanche (L=0.5mH) Gate-Source voltage 128 120 A 81 ID pulse 480 A IAS 36 A EAS(Note 1) 324 mJ IAR 16 A EAR(Note 2) 64 mJ VGS ±20 V ©China Resources Microelectronics (Chongqing) Limited Page 1 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Power dissipation (TC = 25°C) Operating junction and storage temperature Ptot 227 W Tj , T stg -55...+150 °C ※. Notes: 1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 36A, VGS = 10V. 2.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. ©China Resources Microelectronics (Chongqing) Limited Page 2 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Thermal Resistance Symbol Max Thermal resistance, junction – case. RthJC 0.52 Thermal resistance, junction – ambient(min. footprint) RthJA 60 Parameter Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 150 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA VDS=150V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - - 1 - - 10 - - 100 µA Tj=25°C Tj=125°C nA VGS=±20V,VDS=0V VGS=10V, ID=50A Drain-source on-state resistance RDS(on) - 7.0 8.5 - 6.8 8.2 Tj=25°C TO-220 TO-263 VGS=10V, ID=50A - 11.3 14.1 - 11.1 13.9 gfs - 91.8 - Input Capacitance Ciss - 4217 6326 Output Capacitance Coss - 512 768 Reverse Transfer Capacitance Crss - 38 57 Gate Total Charge QG - 63 94.5 Gate-Source charge Qgs - 21 31.5 Gate-Drain charge Qgd - 15 22.5 Qg(th) - 13.5 20.3 Transconductance mΩ mΩ Tj=100°C TO-220 TO-263 S VDS=5V,ID=50A pF VGS=0V, VDS=75V, f=1MHz Dynamic Characteristic Threshold Gate Charge nC ©China Resources Microelectronics (Chongqing) Limited VGS=10V, VDS=75V, ID=50A, f=1MHz; Page 3 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Turn-on delay time td(on) - 11 16.5 tr - 107 160.5 td(off) - 54 81 tf - 102 153 RG - 3.0 5.5 Rise time Turn-off delay time Fall time Gate resistance ns Vds=75V Id=100A Rg=2.7Ω Vgs=10V; (Note 3,4) Ω VGS=0V, VDS=0V, f=1MHz Unit Test Condition VGS=0V,ISD=50A Body Diode Characteristic Parameter Symbol Value min. typ. max. Body Diode Forward Voltage VSD - 0.86 1.4 V Body Diode Reverse Recovery Time trr - 100 200 ns Body Diode Reverse Recovery Charge Qrr - 451 902 nC ISD=100A, VGS=0V, dIF/dt=100A/us; ※. Notes 3.Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 4.Essentially independent of operating temperature. ©China Resources Microelectronics (Chongqing) Limited Page 4 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 1: Output Characteristics 300 Fig 2: Transfer Characteristics 100 280 10V 260 6.5V 240 220 6.0V 200 160 ID (A) 180 ID (A) VDS=5V 80 5.5V 140 60 125°C 120 25°C 40 100 VGS=5.0V 80 60 20 40 20 0 0 0 1 2 3 4 5 0 VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 10.0 1 2 3 4 VGS (V) 5 7 Fig 4: Rds(on) vs Gate Voltage 15 ID=50A 14 9.0 13 RDS(on) (mΩ) RDS(on) (mΩ) 6 8.0 VGS=10V 7.0 12 11 10 9 6.0 8 7 5.0 6 5 4.0 10 20 30 40 50 60 70 80 90 3 100 4 5 6 8 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 2.8 VGS=10V ID=50A Ciss C - Capacitance (PF) 2.5 RDS(on)_Normalized 7 VGS (V) ID (A) 2.2 1.9 1.6 1.3 1000 Coss 100 Crss 1.0 VGS=0V f=1MHz 0.7 10 0.4 25 50 75 100 125 150 175 0 10 20 30 40 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 50 60 70 80 90 100 110 120 VDS (V) Page 5 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 10 VDS=40V ID=50A 9 8 100 VGS (V) 7 10 6 125˚C 5 1 25˚C 4 3 0.1 2 1 0.01 0 0 10 20 30 40 50 60 0 70 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 140 250 120 200 ID (A) 100 Ptot (W) 150 80 60 100 40 50 20 VGS≥10V 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 1us Limited by Rds(on) ID (A) 100 10us 100us 1ms 10 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 10 100 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.2 0.1 ZthJC (˚C/W) 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 7 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 8 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 2.54 BSC. 0.100 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 9 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Package Outline: TO-263 Symbol Dimensions In Millimeters Min. Max. Dimensions In Inches Min. Max. A 4.30 4.86 0.169 0.191 A1 0.00 0.25 0.000 0.010 A2 2.34 2.79 0.092 0.110 b 0.68 0.94 0.027 0.037 b2 1.15 1.35 0.045 0.053 c 0.33 0.65 0.013 0.026 c2 1.17 1.40 0.046 0.055 D 8.38 9.45 0.330 0.372 D1 6.90 8.17 0.272 0.322 10.50 0.385 0.413 e E 2.54 BSC. 9.78 0.100 BSC. E1 6.50 8.60 0.256 0.339 H 14.61 15.88 0.575 0.625 L 2.24 3.00 0.088 0.118 L1 0.70 1.60 0.028 0.063 L2 1.00 1.78 0.039 0.070 L3 0.00 0.25 0.000 0.010 ©China Resources Microelectronics (Chongqing) Limited Page 10 CRST085N15N, CRSS082N15N SkyMOS1 N-MOSFET 150V, 7mΩ, 120A 华润微电子(重庆)有限公司 Revision History Revison Date Major changes 1.0 2018-11-02 Release of formal version. 1.1 2019-02-28 Revise Bug Idss Condition; 2.0 2019-05-28 Supplement package outline info&Zthjc Curve; 3.0 2020-02-20 Revise Crss Data;Add Dynamic Data Control; Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 11