CRTD045N03L

CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Features Product Summary • Uses CRM(CQ) advanced Trench MOS technology VDS 30V • Extremely low on-resistance RDS(on) RDS(on) typ. 3.1mΩ • Excellent QgxRDS(on) product(FOM) ID 80A • Qualified according to JEDEC criteria Applications 100% DVDS Tested • Motor control and drive • Battery management 100% Avalanche Tested • UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part # Marking Package CRTD045N03L CRTD045N03L TO-252 Packing Reel Reel Size Tape Width Qty N/A N/A 2500pcs Symbol Value Unit VDS 30 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 115 80 A 72 ID pulse 320 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 90 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 101 W Tj , T stg -55...+150 °C Operating junction and storage temperature Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 1 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Thermal Resistance Symbol Max Thermal resistance, junction – case. RthJC 1.24 Thermal resistance, junction – ambient(min. footprint) RthJA 94 Parameter Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 30 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 1.3 1.8 2.3 V VDS=VGS,ID=250uA VDS=30V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.02 1 - - 10 - 5 100 µA Tj=25°C Tj=125°C nA VGS=20V,VDS=0V VGS=10V, ID=30A, - 3.1 4.5 - 5.2 6.5 - 4.7 6.5 gfs - 73 - Input Capacitance Ciss - 2343 - Output Capacitance Coss - 467 - Reverse Transfer Capacitance Crss - 300 - Gate Total Charge QG - 50 - Gate-Source charge Qgs - 9.5 - Gate-Drain charge Qgd - 13.5 - Turn-on delay time td(on) - 12 - tr - 104 - td(off) - 35 - tf - 94 - RG - 1.4 - Drain-source on-state resistance RDS(on) Transconductance mΩ Tj=25°C Tj=150°C VGS=4.5V, ID=15A, S VDS=5V,ID=30A pF VGS=0V, VDS=30V, f=1MHz nC VGS=10V, VDS=15V, ID=30A, f=1MHz ns VGS=10V, VDD=15V, RG_ext=3Ω, ID=30A, Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 2 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=20A Body Diode Forward Voltage VSD - 0.8 1.3 V Body Diode Reverse Recovery Time trr - 22 - ns Body Diode Reverse Recovery Charge Qrr - 12 - nC Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited IF=30A, dI/dt=100A/µ s Page 3 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 300 250 10V 7.0V VDS=5V 200 5.0V 180 ID (A) ID (A) 240 4.0V 120 150 100 60 50 Vgs=3.0V 125°C 25°C 0 0 0 1 2 3 4 5 1 2 3 VDS (V) 4 5 6 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage 22 7 ID=20A VGS=10V RDS(on) (mΩ) RDS(on) (mΩ) 6 18 5 14 10 4 25°C 6 3 2 2 0 50 100 150 200 3 250 4 5 8 9 10 10000 2.0 C - Capacitance (PF) VGS=10V ID=40A 1.8 1.6 1.4 1.2 1.0 Ciss 1000 Coss VGS=0V f=1MHz 0.8 Crss 0.6 100 0.4 -50 -25 0 25 50 75 100 125 150 0 6 12 Tj - Junction Temperature (°C) Rev 1.0 7 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature RDS(on)_Normalized 6 VGS (V) ID (A) ©China Resources Microelectronics (Chongqing) Limited 18 24 30 VDS (V) Page 4 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 1000 IS - Diode Current(A) 10 VGS (V) 8 6 VDS=15V ID=30A 4 100 150˚C 25˚C 10 2 1 0 0 10 20 30 40 0.4 50 0.6 0.8 1 1.2 1.4 1.6 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 90 120 80 100 70 60 ID (A) Ptot (W) 80 60 50 40 30 40 VGS≥10V 20 20 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 100 ID (A) 1us Limited by Rds(on) 10us 100us 10 1ms 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 Rev 1.0 1 VDS (V) 10 100 ©China Resources Microelectronics (Chongqing) Limited Page 5 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Fig 12: Max. Transient Thermal Impedance 1 D=0.5 ZthJC (˚C/W) 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 tp (sec) Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 6 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Test Circuit & Waveform Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 7 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Package Outline: TO-252-3L Dimensions In Millimeters Dimensions In Inches Symbol A Min. Max. Min. Max. 2 2.6 0.079 0.102 A1 0 0.15 0.000 0.006 A2 0.76 1.36 0.030 0.054 b 0.61 0.85 0.024 0.033 b1 0.71 0.91 0.028 0.036 b2 5.04 5.64 0.198 0.222 c 0.508 TYP. 0.02 TYP. c1 0.508 TYP. 0.02 TYP. D 5.7 6.3 0.224 0.248 D1 5 5.6 0.197 0.220 E 6.3 6.9 0.248 0.272 E1 4.55 5.15 0.179 0.203 e 2.286 TYP. H 9.65 L 1.4 L1 10.4 0.380 1.7 0.055 2.90 REF. 0.409 0.067 0.114 REF. L2 0.75 1.35 0.030 0.053 L3 0.6 1.2 0.024 0.047 θ 0° 10° 0° 10° θ1 5° 9° 5° 9° θ2 Rev 1.0 0.09 TYP. 25° REF. 25° REF. ©China Resources Microelectronics (Chongqing) Limited Page 8 CRTD045N03L Trench N-MOSFET 30V, 3.1mΩ, 80A Revision History Revison Date 1.0 2018/4/28 Major changes Release of formal version Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. Rev 1.0 ©China Resources Microelectronics (Chongqing) Limited Page 9