CRTD063N04L

CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced Trench MOS technology VDS 40V • Extremely low on-resistance RDS(on) RDS(on) typ. 4.5mΩ • Excellent QgxRDS(on) product(FOM) ID 80A • Qualified according to JEDEC criteria Applications 100% DVDS Tested • Motor control and drive • Battery management 100% Avalanche Tested • UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part # Marking Package CRTD063N04L CRTD063N04L TO-252 Packing Reel Reel Size Tape Width Qty N/A N/A 2500pcs Symbol Value Unit VDS 40 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 88 80 A 56 ID pulse 320 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 81 mJ Gate-Source voltage VGS ±20 V Power dissipation (TC = 25°C) Ptot 92 W Tj , T stg -55...+150 °C Operating junction and storage temperature ©China Resources Microelectronics (Chongqing) Limited Page 1 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Thermal Resistance Symbol Max Thermal resistance, junction – case. RthJC 1.37 Thermal resistance, junction – ambient(min. footprint) RthJA 94 Parameter Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 40 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 1.2 1.7 2.3 V VDS=VGS,ID=250uA VDS=40V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current IGSS - 0.1 1 - 5 10 - 1 100 µA Tj=25°C Tj=125°C nA VGS=20V,VDS=0V VGS=10V, ID=40A, - 4.5 6.3 - 8.3 10 - 5.5 7.5 gfs - 120 - Input Capacitance Ciss - 2246 - Output Capacitance Coss - 319 - Reverse Transfer Capacitance Crss - 155 - Gate Total Charge QG - 47 - Gate-Source charge Qgs - 8.9 - Gate-Drain charge Qgd - 9.9 - Turn-on delay time td(on) - 9 - tr - 31 - td(off) - 54 - tf - 18 - RG - 1.5 - Drain-source on-state resistance RDS(on) Transconductance mΩ Tj=25°C Tj=150°C VGS=4.5V, ID=30A, S VDS=5V,ID=40A pF VGS=0V, VDS=20V, f=1MHz nC VGS=10V, VDS=20V, ID=40A, f=1MHz ns VGS=10V, VDD=20V, RG_ext=3Ω, ID=40A, Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value min. typ. max. Unit Test Condition VGS=0V,ISD=40A Body Diode Forward Voltage VSD - 0.9 1.3 V Body Diode Reverse Recovery Time trr - 19 - ns Body Diode Reverse Recovery Charge Qrr - 10 - nC ©China Resources Microelectronics (Chongqing) Limited IF=40A, dI/dt=100A/µ s Page 3 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 300 VDS=5V 5.0V 240 200 Vgs=4.5V 180 ID (A) ID (A) 250 6.0V 5.5V 10V 150 120 100 60 50 0 0 0 1 2 3 4 150°C 25°C 5 1 2 3 VDS (V) 4 5 6 VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage 22 8 ID=40A VGS=10V RDS(on) (mΩ) RDS(on) (mΩ) 7 18 6 14 10 5 25°C 6 4 2 3 0 50 100 150 200 3 250 4 5 7 8 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 10000 2.2 C - Capacitance (PF) VGS=10V ID=40A 2.0 RDS(on)_Normalized 6 VGS (V) ID (A) 1.8 1.6 1.4 1.2 1.0 Ciss 1000 Coss VGS=0V f=1MHz 0.8 Crss 0.6 100 0.4 -50 -25 0 25 50 75 100 125 150 0 8 16 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 24 32 40 VDS (V) Page 4 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 1000 IS - Diode Current(A) 10 VGS (V) 8 6 VDS=20V ID=40A 4 100 150˚C 25˚C 10 2 1 0 0 10 20 30 40 0.4 50 0.8 1 1.2 1.4 1.6 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 100 90 90 80 80 70 70 ID (A) 60 60 Ptot (W) 0.6 50 50 40 40 30 30 VGS≥10V 20 20 10 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 100 ID (A) 1us Limited by Rds(on) 10us 100us 10 1ms 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 VDS (V) 10 100 ©China Resources Microelectronics (Chongqing) Limited Page 5 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 ZthJC (˚C/W) 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRTD063N04L 华润微电子(重庆)有限公司 Trench N-MOSFET 40V, 4.5mΩ, 80A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Package Outline: TO-252-3L Dimensions In Millimeters Dimensions In Inches Symbol A Min. Max. Min. Max. 2 2.6 0.079 0.102 A1 0 0.15 0.000 0.006 A2 0.76 1.36 0.030 0.054 b 0.61 0.85 0.024 0.033 b1 0.71 0.91 0.028 0.036 b2 5.04 5.64 0.198 0.222 c 0.508 TYP. 0.02 TYP. c1 0.508 TYP. 0.02 TYP. D 5.7 6.3 0.224 0.248 D1 5 5.6 0.197 0.220 E 6.3 6.9 0.248 0.272 E1 4.55 5.15 0.179 0.203 e 2.286 TYP. H 9.65 L 1.4 L1 0.09 TYP. 10.4 0.380 1.7 0.055 2.90 REF. 0.409 0.067 0.114 REF. L2 0.75 1.35 0.030 0.053 L3 0.6 1.2 0.024 0.047 θ 0° 10° 0° 10° θ1 5° 9° 5° 9° θ2 25° REF. 25° REF. ©China Resources Microelectronics (Chongqing) Limited Page 8 CRTD063N04L Trench N-MOSFET 40V, 4.5mΩ, 80A 华润微电子(重庆)有限公司 Revision History Revison Date 1.0 2018/4/24 Major changes Release of formal version Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 9