CRTD110N03L

CRTD110N03L Features VDSS RDS(on) Vgs=10V typ. max. RDS(on) Vgs=4.5V typ. max. ID @ Vgs=10V (Silicon limited) ID (Package limited) Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current Application 30V 9mΩ 11mΩ 11mΩ 13mΩ 45A 20A Power Tool Boost Converters for LED Lighting SMPS TO252 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage Param eter ID Vgs=10V Continuous Drain Current ID Vgs=4.5V IDP IAS EAS PD TJ, TSTG Pulsed Drain Current Avalanche Current (L=0.3mH) T =25°C Energy (L=0.3mH) Avalanche T =25°C Maximum Power Dissipation Maximum TC=25°C (Silicon limited) TC=100°C (Silicon limited) TC=25°C (Package limited) TC=25°C (Silicon limited) TC=100°C (Silicon limited) TC=25°C (Package limited) TC=25°C TC=25°C TC=100°C Junction & Storage Temperature Range Unit 30 ±20 45 32 20 41 29 20 11 18 40 20 -55~175 Thermal Characteristics Symbol Parameter Max. Unit RthJC Thermal resistance, junction to case 3.7 ℃/W RthJA Thermal resistance, junction to ambient 86 ℃/W ©China Resources Microelectronics 1 V V Feb, 2018 A A A mJ W °C CRTD110N03L Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current RDS(on) Drain-Source On-Resistance Gfs Forward Transconductance IDSS Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA 30 — — V VDS=30V,VGS=0V — — 1 uA VDS=VGS,ID=250uA VGS=±20V, VDS=0V 0.8 — 1.8 — — ±100 V nA VGS=10V, ID=12A VGS=4.5V, ID=10A VDS=5V, ID=12A — — — 9 11 43 11 13 — mΩ ISD=25A,VGS=0V — 0.8 1.3 V — — 20 A — 13 — nS — 1.6 — nC — 2.5 — Ω — 1250 — — 168 — — 127 — — 15 — — 25 — — 39 — — 22 — — 23 — — 2.2 — — 5.5 — S Diode Characteristics VSD IS Diode Forward Voltage trr Diode Continuous Forward Current Reverse Recovery Time Qrr Reverse Recovery Charge IS=12A, di/dt=100A/us Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Turn-On Delay Time td(on) tr td(off) tf Rise Time Turn-Off Delay Time Fall Time VGS=0V, VDS=0V, Frequency=1MHz VGS=0V, VDS=15V, F=1MHz VDS=15V, ID=1A, Rg=3 Ω, VGS=4.5V pF nS Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge ©China Resources Microelectronics VDS=25V， VGS=10V， ID=14A 2 Feb, 2018 nC CRTD110N03L Typical Operating Characteristics Figure 1. Typ. Output Characteristics Figure 2. Typ. Output Characteristics 120 120 Tj=125℃ Tj=25℃ 96 3.5V 72 ID (A ) ID (A ) 96 3V 48 3V 48 From Bottom to Top 4.5,5,7,9,10V 24 3.5V 72 From Bottom to Top 4.5,5,7,9,10V 24 0 0 0 1 2 3 4 5 0 1 2 VDS(V) 3 4 5 VDS(V) Figure 3. Transfer Characteristics Figure 4. Rdson vs. Drain Current Characteristics 5E-2 100 VDS=5V Tj=25℃ 4E-2 R D SON (Ω ) 80 ID (A ) 60 40 Tj = 125℃ 3E-2 2E-2 Vgs=4.5V 1E-2 20 Vgs=10V Tj = 25℃ 0E+0 0 0 0 1 2 VGS(V)3 ©China Resources Microelectronics 4 5 30 60 90 120 ID(A) 3 Feb, 2018 150 CRTD110N03L Typical Operating Characteristics Figure 5. Gate Threshold Voltage Characteristics Figure 6. Rdson vs. Junction Tem Characteristics 2.5 1.4 Vgs=10V ID=12A ID=250uA N ormallized R D SON 2.0 N ormallized V GSth(V ) 1.2 1.0 0.8 1.5 1.0 0.5 0.6 0.0 0.4 -50 -25 0 -50 -25 0 25 50 75 25 50 75 100 125 150 175 100 125 150 Tj （℃ ） Tj （℃ ） Figure 7. Rdson vs. VGS Characteristics Figure 8. IS vs. VSD Characteristics 1E+3 1E+0 Tj=125℃ 1E+2 IS (A ) R D S O N (Ω ) 1E-1 Tj=100℃ Tj=25℃ 1E+1 1E-2 * Note: 1. VGS=0V 2. 250uS Pusle test Tj=25℃ 1E+0 0.4 1E-3 0 2 4 6 8 0.8 1.0 1.2 VS (V) VGS(V) ©China Resources Microelectronics 0.6 10 4 Feb, 2018 1.4 CRTD110N03L Typical Operating Characteristics Figure 9. Gate Charge Characteristics Figure 10. Capacitance Characteristics 10 1E+4 8 Ciss 1E+3 C (pF ) V GS(V ) 6 Coss 4 VDS=25V,ID=12A Crss 1E+2 2 1E+1 0 0 0 5 10 15 20 6 12 18 25 VDS(V) Figure 11. Thermal Resistance Characteristics Figure 12. SOA Qg (nC) 24 T ©China Resources Microelectronics 5 Feb, 2018 30 CRTD110N03L Test Circuit & Waveform ©China Resources Microelectronics 6 Feb, 2018 CRTD110N03L Package Information ©China Resources Microelectronics 7 Feb, 2018