CRTM024N03L2-G

Silicon N-Channel Power MOSFET CRTM024N03L2-G General Description ： CRTM024N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS 30 V ID（ Silicon limited current ） 150 A ID（ Package limited current ） 60 A PD 91.9 W RDS(ON)Typ 1.7 mΩ performance and enhance the avalanche energy. This device can be used in load switch and power switch applications. The package form is PDFN5*6, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤2 . 2mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 30 V 150 A Continuous Drain Current TC = 25 °C（ Package limited ） 60 A Continuous Drain Current TC = 100 °C（ Package limited ） 60 A Pulsed Drain Current TC = 25 °C 240 A Gate-to-Source Voltage ±20 V 297.56 mJ 91.9 W 0.735 W/℃ 150，–55 to 150 ℃ Continuous Drain Current TC = 25 °C ID a1 IDM VGS EAS a2 PD TJ，Tstg Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 2 1 V0 1 CRTM024N03L2-G Electrical Characteristics（Tj= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA IDSS Drain to Source Leakage Current VDS =30V, VGS= 0V, Tj = 25℃ VDS =24V, VGS= 0V, Tj = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Units Min. Typ. Max. 30 -- -- -- -- 1 -- -- 100 VGS=20V -- -- 100 nA VGS =-20V -- -- -100 nA V µA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions Rating Units Min. Typ. Max. VGS=10V,ID=19A -- 1.7 2.2 mΩ VGS=4.5V,ID=19A -- 2.7 3.4 mΩ 0.8 1.3 1.8 V VDS = VGS, ID = 250µA Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VGS = 0V VDS =15V f = 1.0MHz Rating Min. Typ. Max. -- 3574.73 -- -- 538.02 -- -- 514.13 -- Units pF Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage Test Conditions TC = 25 °C IS=19A,VGS=0V Rating Units Min. Typ. Max. -- -- 60 A -- -- 240 A -- -- 1.2 V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units Rθ JC Junction-to-Case 1.36 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 2 of 10 2 0 2 1 V0 1 CRTM024N03L2-G a1 ：Calculated continuous current based on maximum allowable junction temperature. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. a2 ：L=0.5mH, I D=34.5A, Start TJ =25℃ a3 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 2 1 V0 1 CRTM024N03L2-G Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2 0 2 1 V0 1 CRTM024N03L2-G Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 2 1 V0 1 CRTM024N03L2-G Package Information ： Symbol A Dimensions In Millimeters MIN MAX 0.700 1.200 A3 0.254REF D 4.844 5.196 E 5.774 6.326 D1 3.810 4.210 E1 3.375 3.575 D2 4.724 5.076 E2 5.574 5.926 k 1.090 1.490 b 0.250 0.550 e 1.270TYP L 0.459 0.811 L1 0.424 0.576 H 0.474 0.826 θ 10° 12° PDFN5×6 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 0 2 1 V0 1 CRTM024N03L2-G The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 2 1 V0 1