CRTT084NE6N

CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Features Product Summary • Uses CRM(CQ) advanced Trench technology VDS 68V • Extremely low on-resistance RDS(on) RDS(on) typ. 7.1mΩ • Excellent QgxRDS(on) product(FOM) ID 81A • Qualified according to JEDEC criteria 100% DVDS Tested Applications 100% Avalanche Tested • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part # Marking Package CRTT084NE6N CRTT084NE6N TO-220 Packing Tube Reel Size Tape Width Qty N/A N/A 50pcs Symbol Value Unit VDS 68 V Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) ID TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) 81 87 A 51 ID pulse 324 A Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 100 mJ Gate-Source voltage VGS ±25 V Power dissipation (TC = 25°C) Ptot 111 W Tj , T stg -55...+150 °C Tsold 260 °C Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) ©China Resources Microelectronics (Chongqing) Limited Page 1 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Thermal Resistance Parameter Thermal resistance, junction – case. Thermal resistance, junction – ambient(min. footprint) Symbol Max RthJC 1.13 RthJA* 66 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 68 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA Zero gate voltage drain current IDSS Gate-source leakage current IGSS - - 100 - ±10 ±100 µA nA VDS=68V,VGS=0V Tj=150°C VGS=±25V,VDS=0V VGS=10V, ID=40A, Drain-source on-state resistance RDS(on) - 7.1 8.4 - 13.9 16.5 gfs - 105 - Input Capacitance Ciss - 3091 - Output Capacitance Coss - 292 - Reverse Transfer Capacitance Crss - 219 - Gate Total Charge QG - 72 - Gate-Source charge Qgs - 17 - Gate-Drain charge Qgd - 26 - Turn-on delay time td(on) - 13 - tr - 75 - td(off) - 46 - tf - 73 - RG - 2.4 - Transconductance mΩ Tj=25°C Tj=150°C S VDS=5V,ID=40A pF VGS=0V, VDS=35V, f=1MHz nC VGS=10V, VDS=32V, ID=40A, f=1MHz ns VGS=10V, VDD=32V, RG_ext=2.7Ω,ID=40A Ω VGS=0V, VDS=0V, f=1MHz Dynamic Characteristic Rise time Turn-off delay time Fall time Gate resistance ©China Resources Microelectronics (Chongqing) Limited Page 2 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Body Diode Characteristic Parameter Symbol Value Unit Test Condition 1.3 V VGS=0V,ISD=40A 81 A TC = 25°C min. typ. max. - 0.9 Body Diode Forward Voltage VSD Body Diode Forward Current IS Body Diode Reverse Recovery Time trr - 36 - ns Body Diode Reverse Recovery Charge Qrr - 43 - nC IF=40A, dI/dt=100A/µ s *The value of RthJA is measured by placing the device in a still air box which is one cubic foot. ©China Resources Microelectronics (Chongqing) Limited Page 3 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Typical Performance Characteristics Fig 2: Transfer Characteristics Fig 1: Output Characteristics 250 200 7.0V 6.0V VDS=5V 160 150 ID (A) ID (A) 200 10V Tj=25°C 5.5V 120 100 80 VGS=5.5V 50 150°C 40 25°C 0 0 0 2 4 6 8 10 2 3 4 VDS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage 6 7 Fig 4: Rds(on) vs Gate Voltage 24 11 22 Tj=25°C ID=40A 20 RDS(on) (mΩ) 10 RDS(on) (mΩ) 5 VGS (V) 9 VGS=7V 18 150°C 16 14 12 8 10 VGS=10V 25°C 8 7 6 4 6 0 40 80 120 160 4 200 5 6 8 9 10 Fig 6: Capacitance Characteristics Fig 5: Rds(on) vs. Temperature 100000 2.5 C - Capacitance (PF) VGS=10V ID=40A 2.0 RDS(on)_Normalized 7 VGS (V) ID (A) 1.5 1.0 10000 Ciss 1000 Coss VGS=0V f=1MHz 100 0.5 Crss 10 0.0 -50 -25 0 25 50 75 100 125 150 0 13 26 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited 39 52 65 VDS (V) Page 4 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Fig 8: Body-diode Forward Characteristics Fig 7: Gate Charge Characteristics 1000 IS - Diode Current(A) 10 VGS (V) 8 VDS=32V ID=40A 6 4 100 150˚C 25˚C 10 2 1 0 0 14 28 42 56 0 70 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 150 175 VSD - Diode Forward Voltage(V) Qg (nC) Fig 10: Drain Current Derating Fig 9: Power Dissipation 90 120 80 100 70 60 ID (A) Ptot (W) 80 60 50 40 30 40 VGS≥10V 20 20 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Fig 11: Safe Operating Area 1000 100 ID (A) 1us Limited by Rds(on) 10us 100us 10 1ms 10ms DC 1 Single pulse Tc=25˚C 0.1 0.1 1 VDS (V) 10 100 ©China Resources Microelectronics (Chongqing) Limited Page 5 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Fig 12: Max. Transient Thermal Impedance 1 D=0.5 0.2 ZthJC (˚C/W) 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.001 1E-05 0.0001 0.001 0.01 0.1 tp (sec) ©China Resources Microelectronics (Chongqing) Limited Page 6 CRTT084NE6N 华润微电子(重庆)有限公司 Trench N-MOSFET 68V, 7.1mΩ, 81A Test Circuit & Waveform ©China Resources Microelectronics (Chongqing) Limited Page 7 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Package Outline: TO-220-3L Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.30 4.80 0.169 0.189 A1 1.20 1.45 0.047 0.057 A2 2.20 2.90 0.087 0.114 b 0.69 0.95 0.027 0.037 b2 1.00 1.60 0.039 0.063 c 0.33 0.65 0.013 0.026 D 14.70 16.20 0.579 0.638 D1 8.59 9.65 0.338 0.380 D2 11.75 13.60 0.463 0.535 e 2.54 BSC. 0.100 BSC. E 9.60 10.60 0.378 0.417 E1 7.00 8.46 0.276 0.333 H1 6.20 7.00 0.244 0.276 L 12.60 14.80 0.496 0.583 L1 2.70 3.80 0.106 0.150 L2 12.13 16.50 0.478 0.650 Q 2.40 3.10 0.094 0.122 P 3.50 3.90 0.138 0.154 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRTT084NE6N Trench N-MOSFET 68V, 7.1mΩ, 81A 华润微电子(重庆)有限公司 Revision History Revison Date 1.0 2018/9/13 Release of formal version 2019/5/21 Increase the environmental labeling, IS, Tsold and IGSS test value at VGS=-25V;Update IDSS test condition VDS from 65V to 68V;Update the RG test value;Update Fig3/Fig4 of Typical Performance Characteristics;Update Package Outline 2.0 Major changes Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. ©China Resources Microelectronics (Chongqing) Limited Page 9