CRXU10D065G2

CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC General Description Product Summary This product family is CRM's second generation SiC JBS, with lower VF and offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO. VRRM IF (TC=161℃) QC 650 V 10 A 28 nC Features • Low conduction loss due to low VF • Extremely low switching loss by tiny QC • Highly rugged due to better surge current • Industrial standard quality and reliability Applications • Server • Telecom • High performance SMPS • Power factor correction TO-247-2 Equivalent circuit Package Marking and Ordering Information Part # Marking Package CRXU10D065G2 CRXU10D065G2 TO-247-2 Page 1 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Maximum Ratings (at Tc = 25 °C, unless otherwise specified) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 650 V Surge Peak Reverse Voltage VRSM 650 V VR 650 V DC Peak Reverse Voltage Continuous Forward Current TC = 25°C TC = 135°C IF TC = 161°C 33 17 A 10 Repetitive Peak Forward Surge Current TC = 25°C,tp=8.3ms,Half Sine Pulse IFRM TC = 110°C,tp=8.3ms,Half Sine Pulse 37 A 30 Non-Repetitive Forward Surge Current TC = 25°C,tp=8.3ms,Half Sine Pulse IFSM TC = 110°C,tp=8.3ms,Half Sine Pulse 80 A 64 Non-Repetitive Forward Surge Current TC = 25°C,tp=8.3ms,Half Sine Pulse ∫i2dt TC = 110°C,tp=8.3ms,Half Sine Pulse 26.6 A 2s 17 Power dissipation TC = 25°C Ptot TC = 110°C Operating junction Range Storage temperature Range 93 W 40 Tj -55 to +175 °C T stg -55 to +150 °C Page 2 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Thermal Resistance Parameter Thermal resistance, junction – case. Symbol Typ. Unit RthJC 1.6 °C/W Electrical Characteristic (at Tc = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition IF=10A Forward Voltage VF - 1.35 1.7 - 1.55 2 V Tj=25°C Tj=175°C VR=650V Reverse Current IR - 2 50 - 50 - μA Tj=25°C Tj=175°C VR=400V，Tj=25℃ Total Capacitive Charge QC - 28 - nC 𝑉𝑅 𝑄𝐶 = න 𝐶 𝑉 𝑑𝑉 0 Tj=25℃, f=1MHz Total Capacitance C - 560 - - 56 - - 44 - pF VR=0V VR=200V VR=400V Page 3 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Characteristics Curve： Fig 2: Reverse Characteristics Fig 1: Forward Characteristics 14 1.0E-03 Tj=100℃ Tj=175℃ 8.0E-04 12 Tj=150℃ 8 IR (A) IF (A) Tj=150℃ Tj=175℃ 10 Tj=125℃ 6 Tj=125℃ 6.0E-04 Tj=100℃ 4.0E-04 Tj=25℃ 4 2.0E-04 Tj=-55℃ 2 Tj=25℃ Tj=-55℃ 0.0E+00 0 0 0.5 1 1.5 2 2.5 0 150 300 450 600 750 900 VF (V) VR (V) Fig 3: Current Derating Fig 4: Power Derating 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty 80 Ptot (W) IF(peak) (A) 100 60 40 20 DC 0 25 50 75 100 125 150 100 90 80 70 60 50 40 30 20 10 0 25 175 Fig 5: Capacitance vs. Reverse Voltage 500 QC (nC) C (pF) 400 300 200 100 0 10 VR (V) 100 125 150 175 Fig 6: Reverse Charge vs. Reverse Voltage 600 1 75 TC (℃) TC (℃) 0.1 50 100 1000 45 40 35 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 VR (V) Page 4 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Fig 7: Typical Capacitance Stored Energy 10 EC (μJ) 8 6 4 2 0 0 100 200 300 400 500 600 700 VR (V) Fig 8: Transient Thermal Impedance ZθJC,Thermal Response[℃/W] 10 1 0.1 D=1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJC+ TC Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 T , Rectangular Pulse Duration [sec] Page 5 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Package Outline: TO-247-2 Items Values(mm) MIN MAX A 4.85 5.15 A1 2.25 2.55 A2 1.85 2.15 B 1.04 1.33 B1 1.90 2.35 B2 1.90 2.15 C 0.55 0.68 D 20.80 21.10 D1 16.25 17.65 D2 0.95 1.35 E 15.70 16.10 E1 13.50 14.20 E2 3.80 5.00 E3 1.00 2.60 e 10.63 11.13 L 19.80 20.30 L1 4.00 4.50 φP 3.50 3.70 Q 5.40 6.00 S 6.00 6.40 Page 6 CRXU10D065G2 Silicon Carbide Schottky Diode 650 V, 10 A, 28 nC Revision History Revison Date 1.0 2022/1/18 Major changes Release of formal version. Warnings Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 1. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 2. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Page 7