CS100N03B4

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS100N03 B4 General Description ： V DSS 30 V ID 100 A VDMOSFETs, is obtained by the self-aligned planar P D (T C =25℃) 100 W Technology which reduce the conduction loss, improve R DS(ON)Typ 4.0 mΩ CS100N03 B4, the silicon N-channel Enhanced switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications ： UPS,DC Motor Control and Class D Amplifier. Absolute （Tc= 25℃ unless otherwise specified）： Symbol Parameter V DSS Drain-to-Source Voltage ID a1 I DM V GS E AS E AR I AR a2 a1 a1 dv/dt a3 PD T J ，T stg TL Rating Units 30 V Continuous Drain Current 100 A Continuous Drain Current T C = 100 °C 75 A Pulsed Drain Current 400 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 200 mJ Avalanche Energy ,Repetitive 31 mJ Avalanche Current 2.5 A 5 V/ns Power Dissipation 100 W Derating Factor above 25°C 0.67 W/℃ 175，–55 to 175 ℃ 300 ℃ Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS100N03 B4 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Rating Symbol Parameter V DSS Drain to Voltage Δ BV DSS / Δ TJ I DSS Test Conditions Units Min. Typ. Max . V GS =0V, I D =250µA 30 -- -- V Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.08 -- V/℃ -- -- 1 Drain to Source Leakage Current V DS = 30V, V GS = 0V, T a = 25℃ V D S =24V, V GS = 0V, T a = 125℃ -- -- 10 Source Breakdown µA I GSS(F) Gate to Source Forward Leakage V GS =+20V -- -- 100 nA I GSS(R) Gate to Source Reverse Leakage V G S =-20V -- -- -100 nA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance V GS(TH) Gate Threshold Voltage Rating Test Conditions V GS =10V,I D =50A Typ. Max. -- 4.0 5.3 mΩ 4.5 8.0 mΩ 3.0 V V GS =5V,I D =40A V DS = V GS , I D = 250µA Units Min. 1.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter g fs Forward Transconductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =100A V GS = 0V V DS =25V f = 1.0MHz Min. Typ. Max. -- 100 -- -- 3500 -- -- 350 -- -- 300 -- Units S pF Resistive Switching Characteristics Symbol Parameter t d(ON) Turn-on Delay Time tr Rise Time t d(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =30A V DD = 15V V GS = 10V R G = 12Ω I D =30A V DD =15V V GS = 10V Min. Typ. Max. -- 12 -- -- 65 -- -- 125 -- -- 100 -- -- 68 -- -- 8 -- -- 18 -- W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2012 Huajing Discrete Devices CS100N03 B4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 100 A I SM Maximum Pulsed Current (Body Diode) -- -- 400 A V SD Diode Forward Voltage I S =100A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time I S =30A,T j = 25°C -- 40 -- ns Reverse Recovery Charge dI F /dt=100A/us, V GS =0V -- 15 -- nC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter R θ JC Junction-to-Case R θ JA Junction-to-Ambient Typ. Units 1.5 ℃/W 62.5 ℃/W a1 ： Repetitive rating; pulse width limited by maximum junction temperature ： L=0.1mH, I D =63A, Start T J =25℃ a3 ： I SD =30A,di/dt ≤ 100A/us,V DD ≤ BV DS, Start T J =25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 Package Information ： Items Values(mm) MIN MAX A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 D 0.40 0.60 E1 0.60 0.80 E2 0.70 0.90 F 0.40 0.60 G 0.80 1.00 L1 9.70 10.20 L2 2.70 3.10 H 0.60 0.90 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2012 Huajing Discrete Devices R ○ CS100N03 B4 The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Cr(VI) PBB PBDE ≤0.1% Hg ≤0.01% Cd ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Marketing Part： Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU UTH Post：214061 Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2012