CS10N65FA9HD

Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD General Description： CS10N65F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS 650 V ID 10 A PD (TC=25℃) 50 W 0.65 Ω RDS(ON)Typ switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Rating Units Drain-to-Source Voltage 650 V Continuous Drain Current 10 A Continuous Drain Current T C = 100 °C 8.2 A Pulsed Drain Current 40 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 700 mJ Avalanche Energy ,Repetitive 70 mJ Avalanche Current 3.7 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 50 W Derating Factor above 25°C 0.4 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 4000 V TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃ ID IDM a1 VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Min. Typ. Max. 650 -- -- ID=250uA,Reference25℃ -- 0.74 -- VDS = 650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, -- -- 1 Ta = 125℃ -- -- 100 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -10 µA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.65 0.85 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =5.0A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 9 -- -- 1553 -- -- 155 -- -- 16 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =10.0A VDD = 325V VGS = 10V RG =9.1Ω ID =10.0A V DD =325V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 15 -- -- 25 -- -- 51 -- -- 31 -- -- 39 -- 7 -- -- 16 -- Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS10N65F A9HD R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 10 A ISM Maximum Pulsed Current (Body Diode) -- -- 40 A VSD Diode Forward Voltage IS =10.0A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time IS =10.0A,Tj = 25°C -- 275 -- ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 1766 -- nC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 2.5 ℃/W R θJA Junction-to-Ambient 100 ℃/W Units Gate-source Zener diode Symbol Parameter V GSO Gate-source breakdown voltage Test Conditions I GS = ±1mA(Open Drain) Rating Min. Typ. Max. 30 Units V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=12.6A, Start T J =25℃ a3 ：ISD =10A,di/dt ≤100A/us,VDD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ Characteristics Curve： 10μs Pd , Power Dissipation ,Watts Id , Drain Current , Amps 100 10 100μs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0.1 50 37.5 25 12.5 DC 0.01 10 100 1000 Vds , Drain-to-Source Voltage , Volts 1 0 0 10000 Figure 1 Maximum Forward Bias Safe Operating Area 18 Id , Drain Current , Amps 10 Id , Drain Current ,Amps 21 6 4 2 15 0 Figure 2 Maximum Power Dissipation vs Case Temperature 12 8 50 75 100 125 T c , C ase T em perature , C 25 VGS=9V VGS=8V 15 12 9 VGS=6V VGS=7V 6 VGS=5V 3 0 0 0 25 50 75 100 Tc , Case Temperature ,C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 25 30 20 Vds , Drain-to-Source Voltage , Volts 35 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 10% PDM 0.1 0.01 0.00001 5% t1 t2 2% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1% Single pulse 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ Idm , Peak Current , Amps 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   10 VGS=10V 1 1.00E-05 1.00E-04 1.00E-03 t 1.00E-02 1.00E-01 Pulse Width , Seconds 1.00E+00 1.00E+01 Figure 6 Maximum Peak Current Capability 3 PULSED TEST VDS=30V 12 Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current ,Amps 14 10 8 6 4 2 2.5 ID= 10A 2 ID= 5A ID= 2.5A 1.5 1 0.5 0 0 0 2 4 6 8 10 Vgs , Gate to Source Voltage ， Volts 12 Figure 7 Typical Transfer Characteristics 1.1 PULSED TEST Tc =25 ℃ 1.0 VGS=10V 0.9 0.8 0.7 0.6 0 2 4 6 8 Id , Drain Current , Amps 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 4 Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 10 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 12 2.5 6 PULSED TEST VGS=10V ID=5A 2 1.5 1 0.5 0 -100 -50 0 50 100 Tj, Junction temperature ,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 200 CS10N65F A9HD R ○ Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.15 1.2 1.1 1 0.9 0.8 VGS=0V ID=250μA 1.1 1.05 1 0.95 0.9 0.7 -100 200 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature -75 -50 0 50 100 Tj, Junction temperature , C 150 2500 Vgs , Gate to Source Voltage ,Volts 1500 Ciss 1000 Coss 500 Crss 0 0 10 20 30 40 50 Vds , Drain - Source Voltage , Volts -25 12 VDS=480V ID=10A 9 6 3 0 60 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 6 15 30 45 Qg , Total Gate Charge , nC 60 75 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 STARTING Tj = 25℃ 5 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps -50 15 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 2000 Capacitance , pF VGS=0V ID=250μA 4 +150℃ 3 +25℃ 2 -55℃ 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Vsd , Source - Drain Voltage , Volts Figure 15 Typical Body Diode Transfer Characteristics 1.1 STARTING Tj = 150℃ 10 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS10N65F A9HD R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1