CS10N70FA9R

Silicon N-Channel Power MOSFET R ○ CS10N70F A9R General Description： VDSS 700 V ID 10 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.88 Ω CS10N70F A9R, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.05Ω) l Low Gate Charge (Typical Data: 34nC) l Low Reverse transfer capacitances(Typical: 6.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS EAS a2 dv/dt a3 PD Rating Units Drain-to-Source Voltage 700 V Continuous Drain Current 10 A Continuous Drain Current T C = 100 °C 6.3 A Pulsed Drain Current 40 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 480 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 40 W 0.32 W/℃ 150，–55 to 150 ℃ 300 ℃ Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 6 2018V01 CS10N70F A9R R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =700V, V GS= 0V, Ta = 25℃ VDS =560V, V GS= 0V, Ta = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 700 -- -- V -- 0.7 -- V/℃ -- -- 10 µA -- -- 100 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.88 1.05 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance Rg Gate resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Units Min. Typ. Max. VDS=15V, ID =5A -- 9.5 -- S f = 1.0MHz -- 3.04 -- Ω -- 1563 -- -- 120 -- -- 6.2 -- VGS = 0V V DS = 25V f = 1.0MHz PF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =10.0A VDD = 350V VGS = 10V RG =10Ω ID =10.0A V DD =560V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 25.6 -- -- 24.8 -- -- 48.2 -- -- 30.4 -- -- 34 -- -- 7.2 -- -- 15.2 -- Pag e 2 of 6 2018V01 Units ns nC CS10N70F A9R R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Typ. Continuous Source Current (Body Diode) -- -- 10 A ISM Maximum Pulsed Current (Body Diode) -- -- 40 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 504 -- ns Qrr Reverse Recovery Charge -- 3903 -- nC IRRM Reverse Recovery Current -- 16.3 -- A IS =10.0A,VGS=0V IS =10.0A,Tj = 25°C dIF /dt=100A/us, V GS=0V Max. Units Min. Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 3.13 ℃/W R θ JA Junction-to-Ambient 62.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=9.8A, Start TJ=25℃ a3 ：ISD =10A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 6 2018V01 CS10N70F A9R R ○ Characteristics Curve： Figure 1 Maximum Forward Bias Safe Operating Area Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 2 Maximum Power dissipation vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 6 2018V01 CS10N70F A9R Figure 6 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Drain Current R ○ Figure 7 Typical Body Diode Transfer Characteristics Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 6 2018V01 CS10N70F A9R Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Capacitance vs Drain to Source Voltage R ○ Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 6 2018V01 CS10N70F A9R R ○ Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 6 2018V01 CS10N70F A9R Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 8 of 6 2018V01 CS10N70F A9R R ○ Package Information： Items Values(mm) MIN MAX A 9.60 10.4 B 15.4 16.2 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 1.60 2.90 L* 12.0 14.0 N 2.34 2.74 Q 3.15 3.55 2.90 3.30 H *adjustable TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 6 2018V01 CS10N70F A9R R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 6 2 0 1 8 V0 1