CS10N80FA9D

Silicon N-Channel Power MOSFET R ○ CS10N80F A9D General Description： 800 V ID 10 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 Ω CS10N80F A9D, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Rating Units Drain-to-Source Voltage 800 V Continuous Drain Current 10 A 6.5 A 40 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 997 mJ Avalanche Energy ,Repetitive 40 mJ Avalanche Current 2.8 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 60 W Derating Factor above 25°C 0.48 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 6000 V TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃ ID IDM Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS EAS EAR IAR a1 a1 dv/dt a2 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS10N80F A9D R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient IDSS Drain to Source Leakage Current IGSS(F) IGSS(R) Rating Test Conditions Uni ts Min. Typ. Max. 800 -- -- ID=250uA,Reference25℃ -- 0.5 -- V/℃ VDS =900V, V GS= 0V, Ta = 25℃ VDS =720V, V GS= 0V, Ta = 25℃ -- -- 25 µA -- -- 250 µA Gate to Source Forward Leakage VGS =+20V -- -- 10 µA Gate to Source Reverse Leakage VGS =-20V -- -- -10 µA V ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.72 0.9 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =10A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. 20 -- -- 2900 -- 200 -- 25 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Test Conditions Rating Min. Typ. Max. -- 19 -- -- 10 -- -- 68 -- Fall Time -- 23 -- Qg Total Gate Charge -- 65 Qgs Gate to Source Charge -- 13 Qgd Gate to Drain (“Miller”)Charge -- 25 ID =10A VDD =400V VGS = 10V RG =4.7Ω ID =10A V DD =640V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS10N80F A9D R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 10 A ISM Maximum Pulsed Current (Body Diode) -- -- 40 A VSD Diode Forward Voltage IS =10A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time IS =10A,Tj = 25°C -- 200 -- ns Reverse Recovery Charge dIF /dt=100A/us, VGS=0V -- 2.2 -- µC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units R θJC Junction-to-Case 2.08 ℃/W R θJA Junction-to-Ambient 100 ℃/W Gate-source Zener diode Symbol Parameter V GSO Gate-source breakdown voltage Test Conditions I GS = ±1mA(Open Drain) Rating Min. Typ. Max. 30 Units V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 a2 ：Repetitive rating; pulse width limited by maximum junction temperature ：ISD =9A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS10N80F A9D R ○ Characteristics Curve： PD , Power Dissipation ，Watts 80 60 40 20 0 0 25 50 75 100 125 150 TC , Case Temperature , C W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS10N80F A9D W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 5 of 1 0 2 0 1 5 V0 1 CS10N80F A9D W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2 0 1 5 V0 1 CS10N80F A9D R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS10N80F A9D W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS10N80F A9D R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS10N80F A9D R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd ≤0.1% ≤0.1% ≤0.01% Cr(VI) ≤0.1% PBB PBDE ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1