CS120N08A8

Silicon N-Channel Power MOSFET R ○ CS120N08 A8 General Description ： VDSS 85 V ID（ Silicon limited current ） 120 A VDMOSFETs, is obtained by advanced Trench Technology P D(TC=25℃) 208 W which reduce the conduction loss, improve switching RDS(ON)Typ 6 mΩ CS120N08 A8, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤7.5mΩ)  Low Gate Charge (Typical Data:74.4nC)  Low Reverse transfer capacitances(Typical:253pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 85 V 120 A 85 A Pulsed Drain Current 480 A Gate-to-Source Voltage ±20 V 650.25 mJ Power Dissipation 208 W Derating Factor above 25°C 1.6 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 IDM VGS EAS a2 PD Single Pulse Avalanche Energy TJ，Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 1 6 V0 1 CS120N08A8 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA IDSS Drain to Source Leakage Current VDS =85V, VGS= 0V, Ta = 25℃ VDS =68V, VGS= 0V, Ta = 100℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 85 -- -- V -- -- 1 µA -- -- 100 µA VGS =+20V -- -- 100 nA VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=60A VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA Rating Units Min. Typ. Max. -- 6.0 7.5 mΩ 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VGS=0V，VDS=25V f=1.0MHz Rating Min. Typ. Max. -- 4572 -- -- 494.4 -- -- 253 -- Units pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions VGS=10V，RG=6Ω VDD=40V，ID=60A VGS=10V，VDD=64V ID=60A W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 35.7 -- -- 65.6 -- -- 67.2 -- -- 21.87 -- -- 74.4 -- -- 21.9 -- -- 22.4 -- P ag e 2 of 10 Units 2 0 1 6 V0 1 ns nC CS120N08 A8 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 120 A ISM Maximum Pulsed Current (Body Diode) -- -- 480 A VSD Diode Forward Voltage -- -- 1.2 V trr Reverse Recovery Time IS=60A,VGS=0V -- 72 -- ns -- 126 -- nC -- 3.5 -- A IS=20A,Tj = 25℃ Qrr Reverse Recovery Charge IRRM Reverse Recovery Current dIF/dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Rθ JC Junction-to-Case Rθ JA Junction-to-Ambient a1 a2 Max. Units 0.6 ℃/W 48.92 ℃/W ：Repetitive rating; pulse width limited by maximum junction temperature ：L=0.5mH, I D=51A, Start TJ =25℃ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 3 of 10 2 0 1 6 V0 1 CS120N08 A8 R ○ Characteristics Curve： Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 5 Drain-to-Source On Resistance vs Drain Current Figure 4 Typical Output Characteristics Figure 6 Typical Transfer Characteristics W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 4 of 10 2 0 1 6 V0 1 CS120N08 A8 Figure 7 Typical Gate Charge vs Gate to Source Voltage Figure 9 Typical Capacitance vs Drain to Source Voltage R ○ Figure 8 Typical Body Diode Transfer Characteristics Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 5 of 10 2 0 1 6 V0 1 CS120N08 A8 Figure 11 Typical Theshold Voltage vs Junction Temperature R ○ Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 13 Maximum Effective Transient Thermal Impedance, Junction-to-Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 6 of 10 2 0 1 6 V0 1 CS120N08 A8 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 7 of 10 2 0 1 6 V0 1 CS120N08 A8 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ P ag e 8 of 10 2 0 1 6 V0 1 CS120N08 A8 R ○ Package Information ： Items Values(mm) MIN MAX A 9.60 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L* 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 3.50 3.90 *adjustable TO-220AB Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 9 of 10 2 0 1 6 V0 1 CS120N08 A8 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 6 V0 1