CS12N60FA9H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H General Description： CS12N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS 600 V ID 12 A PD (TC=25℃) 55 W RDS(ON)Typ 0.5 Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM Units Drain-to-Source Voltage 600 V Continuous Drain Current 12 A Continuous Drain Current T C = 100 °C a1 a2 EAS EAR a1 a1 dv/dt 10 a3 PD A 48 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 1000 mJ Avalanche Energy ,Repetitive 100 mJ Avalanche Current 4.5 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 55 W 0.44 W/℃ 150，–55 to 150 ℃ 300 ℃ Pulsed Drain Current VGS IAR Rating Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Min. Typ. Max. 600 -- -- ID=250uA,Reference25℃ -- 0.74 -- VDS = 600V, V GS= 0V, Ta = 25℃ VDS =480V, V GS= 0V, -- -- 1 Ta = 125℃ -- -- 100 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =6A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.5 0.65 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =6.0A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 12 -- -- 2120 -- -- 190 -- -- 18.5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =12.0A VDD = 300V VGS = 10V RG = 9.1Ω ID =12.0A V DD =300V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 16 -- -- 26 -- -- 54 -- -- 38 -- -- 46 -- 10 -- -- 18 -- Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS12N60F A9H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 12 A ISM Maximum Pulsed Current (Body Diode) -- -- 48 A VSD Diode Forward Voltage IS =12.0A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time IS =12.0A,Tj = 25°C -- 324 -- ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 2470 -- µC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 2.27 ℃/W R θJA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=14.1A, Start T J =25℃ a3 ：ISD =12A,di/dt ≤100A/us,VDD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ Characteristics Curve： 60 10μs 10 100μs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 0 .0 1 1 DC 100 10 Pd , Power Dissipation ,Watts Id , Drain Current , Amps 100 48 36 24 12 0 0 1000 50 75 100 125 T c , C a s e T em p e ra tu re , C 25 V d s , D ra in -to -S o u rc e V o lta g e , V o lts Figure 2 Maximum Power Dissipation vs Case Temperature 18 21 15 18 Id , Drain Current , Amps Id , Drain Current ,Amps Figure 1 Maximum Forward Bias Safe Operating Area 12 9 6 3 150 VGS=9V VGS=8V 15 12 9 VGS=6V VGS=7V 6 VGS=5V 3 0 0 0 25 50 75 100 Tc , Case Temperature ,C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 25 30 20 Vds , Drain-to-Source Voltage , Volts 35 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 10% PDM 0.1 0.01 0.00001 5% t1 t2 2% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1% Single pulse 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ Idm , Peak Current , Amps 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   10 VGS=10V 1 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width , Seconds Figure 6 Maximum Peak Current Capability 1.00E+00 1.00E+01 t 2.4 PULSED TEST VDS=30V 12 Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current ,Amps 14 10 8 6 4 2 2.0 ID= 12A 1.6 ID= 6A ID= 3A 1.2 0.8 0.4 0 0 0 2 4 6 8 10 Vgs , Gate to Source Voltage ， Volts 12 Figure 7 Typical Transfer Characteristics 0.8 PULSED TEST Tc =25 ℃ 0.7 VGS=10V 0.6 0.5 0.4 0.3 0 2 4 6 8 Id , Drain Current , Amps 4 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 10 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 12 2.5 6 PULSED TEST VGS=10V ID=6A 2 1.5 1 0.5 0 -100 -50 0 50 100 Tj, Junction temperature ,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 200 1.2 1.1 1 0.9 0.8 VGS=0V ID=250μA 1.1 1.05 1 -50 0 50 100 Tj, Junction temperature , C 150 -75 200 Figure 11 Typical Theshold Voltage vs Junction Temperature -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 12 Typical Breakdown Voltage vs Junction Temperature 2500 15 Vgs , Gate to Source Voltage ,Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 2000 1500 Ciss 1000 Coss 500 12 VDS=480V ID=12A 9 6 3 0 Crss 0 0 10 20 30 40 50 Vds , Drain - Source Voltage , Volts 0 60 10 20 30 Qg , Total Gate Charge , nC 40 50 Figure 14 Typical Gate Charge vs Gate to Source Voltage Figure 13 Typical Capacitance vs Drain to Source Voltage 100 6 5 Id , Drain Current , Amps Capacitance , pF VGS=0V ID=250μA 0.95 0.9 0.7 -100 Isd, Reverse Drain Current , Amps R ○ 1.15 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized CS12N60F A9H 4 +150℃ 3 +25℃ 2 -55℃ VGS=0V 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Vsd , Source - Drain Voltage , Volts Figure 15 Typical Body Diode Transfer Characteristics 1.1 STARTING Tj = 25℃ 10 STARTING Tj = 150℃ 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS12N60F A9H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS12N60F A9H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1