CS12N65FA9R

Silicon N-Channel Power MOSFET R ○ CS12N65F A9R General Description： VDSS 650 V ID 12 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 42 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.66 Ω CS12N65F A9R, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.8Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:9.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS EAS a2 dv/dt a3 PD Rating Units Drain-to-Source Voltage 650 V Continuous Drain Current 12 A Continuous Drain Current T C = 100 °C 7.5 A Pulsed Drain Current 48 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 550 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 42 W 0.34 W/℃ 150，–55 to 150 ℃ 300 ℃ Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS12N65F A9R R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, Ta = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 650 -- -- V -- 0.7 -- V/℃ -- -- 1 µA -- -- 100 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =6A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.66 0.8 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance VDS=15V, ID =6A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 12 -- -- 1993 -- -- 160 -- -- 9.5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =12A VDD = 325V RG =10Ω ID =12A V DD =520V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 28 -- -- 26 -- -- 64 -- -- 45 -- -- 40 -- -- 10 -- -- 14 -- Pag e 2 of 1 0 Units 2 0 1 5 V0 1 ns nC CS12N65F A9R R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 12 A ISM Maximum Pulsed Current (Body Diode) -- -- 48 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 651 -- ns Qrr Reverse Recovery Charge -- 4297 -- nC IRRM Reverse Recovery Current -- 13.2 -- A IS =12A,VGS=0V IS =12A,Tj = 25℃ dIF /dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units R θ JC Junction-to-Case 2.98 ℃/W R θ JA Junction-to-Ambient 62.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=10.5A, Start T J=25℃ a3 ：ISD =12A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS12N65F A9R R ○ Characteristics Curve： 48 10 100us 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 0 .0 1 1 10ms PD , Power Dissipation ，Watts Id , Drain Current , Amps 100 24 12 DC 0 10 100 V d s , D r a in - t o - S o u r c e V o lta g e , V o lts 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 25 50 100 75 TC , Case Temperature , C Id , Drain Current , Amps 24 12 6 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 18 Id , Drain Current , Amps 36 250us Pluse Test Tc = 25℃ VGS=10V 18 VGS=7V 12 VGS=5V VGS=6V 6 VGS=4.5V 0 0 0 25 75 100 125 50 TC , Case Tem perature , C 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 25 CS12N65F A9R 16 Isd, Reverse Drain Current , Amps Id , Drain Current , Amps 30 250us Pulse Test VDS=20V 25 20 15 +25℃ 10 +150℃ 5 0 12 8 +150℃ +25℃ 4 0 2 4 6 8 Vgs , Gate to Source Voltage , Volts 10 0 Rds(on), Drain to Source ON Resistance, Nomalized 1.0 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 0.9 VGS=10V 0.8 0.7 0.6 0 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 1.2 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Ohms R ○ 2.5 2.25 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=3.5A 2 1.75 1.5 1.25 1 0.75 0.5 3 6 9 Id , Drain Current , Amps Figure 8 Typical Drain to Source ON Resistance vs Drain Current 12 -50 0 50 100 Tj, Junction temperature , C Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 150 CS12N65F A9R 1.15 1.15 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized 1.05 1 0.95 0.9 VGS=0V ID=250μA 0.85 0.8 0.75 1.05 VGS=0V ID=250μA 0.95 0.85 0.7 0.65 -75 -50 -25 0.75 -55 0 25 50 75 100 125 150 175 Tj, Junction temperature , C -30 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure 10 Typical Theshold Voltage vs Junction Temperature 12 Ciss Coss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Crss Vgs , Gate to Source Voltage ,Volts Vgs(th),Threshold Voltage, Nomalized R ○ VDS=520V VDS=325V VDS=130V 10 8 6 4 2 ID=12A 0 0 Figure 12 Typical Capacitance vs Drain to Source Voltage 10 20 30 Qg , Total Gate Charge , nC 40 50 Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS12N65F A9R R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS12N65F A9R W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS12N65F A9R R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.15 8.75 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS12N65F A9R R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1