Silicon
N-Channel
Power MOSFET
R
○
CS13N50F A9H
General Description:
CS13N50F A9H,
the
silicon
N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
500
V
ID
13
A
PD (TC=25℃)
60
W
0.34
Ω
RDS(ON)Typ
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge
(Typical Data:45nC)
l Low Reverse transfer capacitances(Typical:23pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
ID
IDM
Units
Drain-to-Source Voltage
500
V
Continuous Drain Current
13
A
Continuous Drain Current T C = 100 °C
a1
a2
EAS
EAR
a1
a1
dv/dt
10
a3
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
1100
mJ
Avalanche Energy ,Repetitive
78
mJ
Avalanche Current
4.0
A
5
V/ns
60
W
0.48
W/℃
150,–55 to 150
℃
300
℃
Peak Diode Recovery dv/dt
Power Dissipation
PD
A
52
Pulsed Drain Current
VGS
IAR
Rating
Derating Factor above 25°C
TJ,T stg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS13N50F A9H
R
○
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID =250µA
ΔBVDSS/ΔT J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
Drain to Source Leakage Current
VDS =500V, V GS= 0V,
Ta = 25℃
VDS =400V, V GS= 0V,
IDSS
Rating
Units
Min.
Typ.
Max.
500
--
--
V
--
0.54
--
V/℃
--
--
1
Ta = 125℃
--
--
100
µA
IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =6.5A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250µA
Rating
Units
Min.
Typ.
Max.
--
0.34
0.45
Ω
4.0
V
2.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Trans conductance
VDS=15V, ID =6.5A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
--
12
--
--
2130
--
--
210
--
--
23
--
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =13A VDD =250V
VGS = 10V RG = 6.1Ω
ID =13A V DD =250V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
14
--
--
27
--
--
45
--
--
36
--
--
45
--
10
--
--
18
--
Pag e 2 of 1 0
Units
ns
nC
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CS13N50F A9H
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Test Conditions
Rating
Typ.
Continuous Source Current (Body Diode)
--
--
13
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
52
A
VSD
Diode Forward Voltage
IS =13A,V GS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS =13.0A,Tj =150°C
--
506
--
ns
Reverse Recovery Charge
dIF /dt=100A/us,
--
4.2
Qrr
Max.
Units
Min.
uC
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
R θ JC
Junction-to-Case
R θ JA
Junction-to-Ambient
Typ.
Units
2.08
℃/W
62
℃/W
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=6.5mH, ID=14.8A, Start T J =25℃
a3
:ISD =13A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
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Characteristics Curve:
100
75
10
100μs
1
1ms
10ms
DC
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=150℃
TC=25℃
Single Pulse
Pd , Power Dissipation ,Watts
Id,Drain Current,Amps
10μs
60
45
30
15
0.01
1
10
100
Vds,Drain Source Voltage,Volts
Figure 1 Maximum Forward Bias Safe Operating Area
18
21
15
18
12
9
6
3
25
50
75
100
125
T c , C a s e T e m p e ra tu r e , C
150
Figure 2 Maximum Power Dissipation vs Case Temperature
Id , Drain Current , Amps
Id , Drain Current ,Amps
0
0
1000
VGS=9V
VGS=8V
15
12
9
VGS=6V
VGS=7V
6
VGS=5V
3
0
0
0
25
50
75
100
Tc , Case Temperature ,C
125
150
Figure 3 Maximum Continuous Drain Current vs Case Temperature
0
5
10
15
25
30
20
Vds , Drain-to-Source Voltage , Volts
35
Figure 4 Typical Output Characteristics
Thermal Impedance, Normalized
1
50%
20%
10%
PDM
0.1
0.01
0.00001
5%
t1
t2
2%
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
1%
Single pulse
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS13N50F A9H
Idm , Peak Current , Amps
100
R
○
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150 − TC
I = I 25
125
10
VGS=10V
1
1.00E-05
1.00E-04
1.00E-03
t
1.00E-02
1.00E-01
Pulse W idth , Seconds
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
1.5
Rds(on), Drain to Source ON
Resistance , Ohms
Id , Drain Current ,Amps
14
PULSED TEST
VDS=30V
12
10
8
6
4
2
ID= 13A
1
ID= 6.5A
ID= 3.25A
0.75
0.5
0.25
0
0
0
1
2
3
4
5
Vgs , Gate to Source Voltage , Volts
4
12
8
10
14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
6
Figure 7 Typical Transfer Characteristics
0.8
Rds(on), Drain to Source ON
Resistance, Nomalized
PULSED TEST
Tc =25 ℃
Rds(on), Drain to Source ON
Resistance , Ohms
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
1.25
0.7
VGS=10V
0.6
0.5
0.4
0.3
0
10
20
30
40
Id , Drain Current , Amps
50
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
60
2.5
6
PULSED TEST
VGS=10V ID=6.5A
2
1.5
1
0.5
0
-100
-50
0
50
100
Tj, Junction temperature ,C
150
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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200
1.2
1.1
1
0.9
0.8
VGS=0V
ID=250μA
1.1
1.05
1
VGS=0V
ID=250μA
0.95
0.9
0.7
-100
-50
0
50
100
Tj, Junction temperature , C
150
200
Figure 11 Typical Theshold Voltage vs Junction Temperature
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 12 Typical Breakdown Voltage vs Junction Temperature
10000
15
Vgs , Gate to Source Voltage ,Volts
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
8000
6000
4000
Ciss
2000
Coss
12
VDS=400V
ID=13A
9
6
3
Crss
0
0
0
10
20
30
40
50
Vds , Drain - Source Voltage , Volts
0
60
Figure 13 Typical Capacitance vs Drain to Source Voltage
6
25
50
75
100
Qg , Total Gate Charge , nC
125
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
5
Id , Drain Current , Amps
Isd, Reverse Drain Current , Amps
Capacitance , pF
R
○
1.15
Bvdss,Drain to Source
Breakdown Voltage, Normalized
Vgs(th),Threshold Voltage, Nomalized
CS13N50F A9H
4
3
+150℃
+25℃
2
-55℃
1
0
0.5
0.6
0.7
0.8
0.9
1
Vsd , Source - Drain Voltage , Volts
Figure 15 Typical Body Diode Transfer Characteristics
STARTING Tj = 150℃
10
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
VGS=0V
0.4
STARTING Tj = 25℃
1.1
0.1
1.00E-06
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav , Time in Avalanche , Seconds
Figure 16 Unclamped Inductive Switching Capability
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS13N50F A9H
R
○
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 7 of 1 0
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CS13N50F A9H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
R
○
Pag e 8 of 1 0
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CS13N50F A9H
R
○
Package Information
Items
Values(mm)
MIN
MAX
A
9.60
10.40
B
15.40
16.20
B1
8.90
9.50
C
4.30
4.90
C1
2.10
3.00
D
2.40
3.00
E
0.60
1.00
F
0.30
0.60
G
1.12
1.42
3.40
3.80
2.00
2.40
12.00
14.00
6.30
7.70
N
2.34
2.74
Q
3.15
3.55
3.00
3.30
H
L
TO-220F Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
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The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Limit
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
≤0.1%
≤0.1%
≤0.01%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○
○
○
○
○
○
Molding Compound
○
○
○
○
○
○
Chip
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
Solder
×
○
○
○
○
○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
Note
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part:
Post:214061
UTH
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
E-mail:sales@hj.crmicro.com
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
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