CS150N03A8

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS150N03A8 General Description： CS150N03A8, the silicon VDSS 30 V ID 150 A VDMOSFETs, is obtained by advanced trench Technology PD (T C=25℃) 100 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.8 mΩ N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDM VGS EAS a2 dv/dt a3 PD Rating Units Drain-to-Source Voltage 30 V Continuous Drain Current 150 A Continuous Drain Current T C = 100 °C 120 A Pulsed Drain Current 600 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 1300 mJ Peak Diode Recovery dv/dt 4.0 V/ns Power Dissipation 100 W Derating Factor above 25°C 0.67 W/℃ –55 to 175 ℃ 300 ℃ TJ，T stg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 11 Huajing Discrete Devices CS150N03A8 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage ΔVDSS/ΔT J IDSS Rating Test Conditions Units Min. Typ. Max. V GS=0V, ID =250µA 30 -- -- V vdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.08 -- V/℃ -- -- 1 Drain to Source Leakage Current V DS = 30V, VGS= 0V, T a = 25℃ V DS =24V, V GS= 0V, T a = 125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage V GS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage V GS =-20V -- -- -100 nA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Rating Test Conditions V GS=10V,ID =50A V GS=4.5V,ID =40A V DS = V GS , ID = 250µA Units Min. Typ. Max. --1.0 2.8 5.0 3.5 6.5 3.0 mΩ mΩ V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter g fs Forward Transconductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Test Conditions V DS=10V, ID =15A V GS = 0V VDS = 25V f = 1.0MHz Units Min. Typ. Max. -- 100 -- -- 10000 -- -- 940 -- -- 800 -- S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions ID =1A VDD = 15V VGS = 10V RG = 6Ω ID =16A V DD =15V VGS = 10V Units Min. Typ. Max. -- 22 -- -- 20 -- -- 145 -- -- 74 -- -- 75 -- 22 -- -- 28 -- W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . ns nC P a g e 2 o f 1 0 2 0 11 Huajing Discrete Devices CS150N03A8 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 150 A ISM Maximum Pulsed Current (Body Diode) -- -- 600 A VSD Diode Forward Voltage IS =150A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS =20,Tj = 25°C -- 52 ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 53 nC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Units R θ JC Junction-to-Case 1.5 ℃/W R θ JA Junction-to-Ambient 62 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=1.0mH, ID=53.5A, Start T J =25℃ a3 ：ISD =20A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS150N03A8 Characteristics Curve： Figure 1 Maximun Forward Bias Safe Operating Area Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 2 Maximun Power Dissipation vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS150N03A8 Figure 6 Maximun Peak Current Capability Figure 7 Typical Transfer Characteristics Figure 9 Typical Drain to Source ON Resistance vs Drain Current Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2 0 11 Huajing Discrete Devices Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 15 Typical Body Diode Transfer Characteristics R ○ CS150N03A8 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 14 Typical Gate Charge vs Gate to Source Voltage Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS150N03A8 TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS150N03A8 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS150N03A8 Package Information： TO-220AB Package Items Values(mm) MIN MAX A 9.70 10.30 B 15.00 16.00 B1 2.40 3.00 B2 8.90 9.50 C 4.30 4.80 D 1.20 1.40 E 0.70 0.90 F 0.40 0.60 G 1.17 1.37 H 2.70 3.30 L 12.70 14.70 N 2.34 2.74 3.50 3.70 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2 0 11 Huajing Discrete Devices CS150N03A8 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg ≤0.1% ≤0.1% Lead Frame ○ ○ Molding Compound ○ Chip Cd PBB PBDE ≤0.1% ≤0.1% ≤0.1% ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder ○ ○ ○ ○ ○ ○ Limit ≤0.01% Cr(VI) ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Marketing Part： Mail：214061 http://www. crhj.com.cn Tel: 0510-85807228 Fax: 0510-85800864 Post：214061 Tel / Fax：0510-85807228-3663/5508 E-mail：sales@crhj.com.cn 0510-85800360（Fax） Application and Service：Post：214061 Tel / Fax：0510-85807228-3399 / 2227 E-mail：apply@crhj.com.cn W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2 0 11