CS15N50FA9R

Silicon N-Channel Power MOSFET R ○ CS15N50F A9R General Description： VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 70 W the conduction loss, improve switching performance and RDS(ON)Typ 0.3 Ω enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM Units Drain-to-Source Voltage 500 V Continuous Drain Current 15 A 9.5 A 60 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 1000 mJ Avalanche Energy ,Repetitive 200 mJ Avalanche Current 6.3 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 70 W 0.56 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS a2 EAS EAR IAR Rating a1 a1 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS15N50F A9R R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current VDS = 500V, V GS= 0V, Ta = 25℃ VDS =400V, V GS= 0V, IDSS Rating Units Min. Typ. Max. 500 -- -- V -- 0.6 -- V/℃ -- -- 1 Ta = 125℃ -- -- 10 µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =7.5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.3 0.4 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance VDS=15V, ID =7.5A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 18 -- -- 2400 -- -- 235 -- -- 25.5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =15A VDD =250V VGS = 10V RG =6.1Ω ID =15A V DD =250V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 15 -- -- 30 -- -- 50 -- -- 40 -- -- 50 -- 12 -- -- 20 -- Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS15N50F A9R R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 15 A ISM Maximum Pulsed Current (Body Diode) -- -- 60 A VSD Diode Forward Voltage IS =15A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS =15A,Tj = 25°C -- 582 ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 4.7 µC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. R θ JC Junction-to-Case 1.79 ℃/W R θ JA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=14.1A, Start T J =25℃ a3 ：ISD =15A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS15N50F A9R R ○ Characteristics Curve： PD , Power Dissipation ，Watts Pd , Power Dissipation ,Watts 70 200 60 150 40 100 20 50 0 0 00 25 25 50 75 100 50 100 75 Tc , Case Temperature , C 125 125 150 150 TC, Case Temperature , C W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS15N50F A9R W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 5 of 1 0 2 0 1 5 V0 1 CS15N50F A9R W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2 0 1 5 V0 1 CS15N50F A9R R ○ TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS15N50F A9R W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS15N50F A9R R ○ Package Information： Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.25 8.65 C 4.40 4.80 D 2.50 2.90 E 0.70 0.90 F 0.30 0.60 G 1.12 1.42 H 3.40 3.80 L 12.0 14.0 N 2.34 2.74 3.00 3.30 TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS15N50F A9R R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd ≤0.1% ≤0.01% Cr(VI) ≤0.1% PBB PBDE ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1