CS16N06AE-G

Silicon N-Channel Power Trench MOSFET R ○ CS16N06 AE-G General Description ： VDSS 60 V ID（ Silicon limited current ） 16 A VDMOSFETs, is obtained by the high density Trench technology P D(TA=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 6.5 mΩ CS16N06 AE-G the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP8, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance (Rdson≤10mΩ)  Low Gate Charge (Typical Data: 88.8nC)  Low Reverse transfer capacitances(Typical:220pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS Rating Units Drain-to-Source Voltage 60 V Continuous Drain Current 16 A 10.2 A 64 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 211 mJ PD Power Dissipation 3.1 W TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃ ID Continuous Drain Current TC = 100 °C a1 IDM VGS EAS a2 Pulsed Drain Current W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 6 V0 1 CS16N06AE-G R ○ Electrical Characteristics（TA= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage Drain to Source Leakage Current IDSS Rating Min. Typ. Max. VGS=0V, ID=250µA 60 -- -- VDS = 60V, VGS= 0V, Ta = 25℃ VDS =48V, VGS= 0V, -- -- 1 Ta = 125℃ -- -- 100 Units V µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions Rating Units Min. Typ. Max. VGS=10V,ID=8A -- 6.5 10 mΩ VGS=4.5V,ID=8A -- 9.1 12 mΩ 3.0 V VDS = VGS, ID = 250µA 1.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1.0MHz Rating Min. Typ. Max. Units Ω 2.4 -- 4398 -- -- 296 -- -- 220 -- pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =8A VDD =30V VGS = 10V R G =9.1Ω ID =20A VDD =30V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 25.3 -- -- 95.7 -- -- 154 -- -- 77.9 -- -- 88.8 -- 17.3 -- -- 17.4 -- P ag e 2 of 10 Units 2 0 1 6 V0 1 ns nC R ○ CS16N06 AE-G Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Typ. Continuous Source Current (Body Diode) -- -- 16 A ISM Maximum Pulsed Current (Body Diode) -- -- 64 A VSD Diode Forward Voltage IS=8A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time IS=8A,Tj = 25°C -- 56 73 ns Reverse Recovery Charge dIF/dt=100A/us, VGS=0V -- 11.2 15 nC Qrr Max. Units Min. Pulse width tp≤380µs,δ≤2% Symbol Parameter Max. Units RθJA Junction-to-Ambient 40 ℃/W Notes： a1 a2 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=0.1mH, I D=65A, Start TJ =25℃ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 6 V0 1 R ○ CS16N06 AE-G Characteristics Curve： Figure 1. Maximum Effective Thermal impedance，Junction-to-Ambient Note： ID=8A 250us Pulse Test W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2 01 6 V0 1 R ○ CS16N06 AE-G Figure 6. Typical Transfer Characteristics Figure 8. Typical Drain-to-Source ON Resistance vs Drain Current Figure 10. Typical Breakdown Voltage vs Junction Temperature Figure 7. Typical Body Diode Transfer Characteristics Figure 9. Drain-to-Source ON Resistance vs Junction Temperature Figure 11. Typical Threshold Voltage vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 1 6 V0 1 R ○ CS16N06 AE-G Figure 12.Maximum Forward Bias Safe Operating Area Figure 13. Typical Capacitance vs Drain-to-Source Voltage Figure 14. Typical Gate Charge vs Gate-to-Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 01 6 V0 1 R ○ CS16N06 AE-G Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 6 V0 1 R ○ CS16N06 AE-G W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2 01 6 V0 1 R ○ CS16N06 AE-G Package Information： D θ3 c b e Items A1 A2 A E1 E L Values(mm) MIN MAX A 1.30 1.80 A1 0.10 0.25 A2 1.30 1.50 E 5.80 6.20 E1 3.80 4.00 D 4.80 5.00 L 0.40 0.90 e b 1.27 TYP 0.37 c θ3 0.47 0.20 TYP 0° 8° SOP8 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 6 V0 1 R ○ CS16N06 AE-G The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Electric glue ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 6 V0 1