CS1N60A1H

Silicon N-Channel Power MOSFET R ○ CS1N60 A1H General Description： CS1N60 A1H, the silicon N-channel Enhanced VDSS 600 V ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 3 W which reduce the conduction loss, improve switching R DS(ON)Typ 11 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS EAR IAR Units Drain-to-Source Voltage 600 V Continuous Drain Current 0.8 A Continuous Drain Current T C = 100 °C 0.6 A Pulsed Drain Current 3.2 A ±30 V Single Pulse Avalanche Energy 20 mJ Avalanche Energy ,Repetitive 6 mJ 1.1 A Peak Diode Recovery dv/dt 5 V/ns Power Dissipation 3 W 0.024 W/℃ 150，–55 to 150 ℃ 300 ℃ Gate-to-Source Voltage a2 EAS Rating a1 a1 dv/dt Avalanche Current a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 o f 11 2 0 1 5 V0 1 R ○ CS1N60 A1H Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current VDS = 600V, V GS= 0V, Ta = 25℃ VDS =480V, V GS= 0V, IDSS Rating Units Min. Typ. Max. 600 -- -- V -- 0.55 -- V/℃ -- -- 1 Ta = 125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =0.4A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 11 15 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter g fs Forward Trans conductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Test Conditions VDS=15V, ID =0.8A VGS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 0.9 -- -- 92 -- -- 10.7 -- -- 2.6 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Rating Test Conditions Min. Typ. Max. Turn-on Delay Time -- 6.3 -- tr Rise Time -- 6.3 -- td(OFF) Turn-Off Delay Time -- 21 -- tf Fall Time -- 15 -- Qg Total Gate Charge -- 4 -- 0.7 -- 2.1 Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge ID =0.8A VDD = 300V VGS = 10V RG = 25Ω ID =0.8A V DD =300V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 11 Units ns nC 2 0 1 5 V0 1 R ○ CS1N60 A1H Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage IS =0.8A,VGS =0V trr Reverse Recovery Time IS =0.8A,Tj = 25°C Qrr Reverse Recovery Charge dIF /dt=100A/us, V GS=0V Rating Test Conditions Units Min. Typ. Max. -- -- 0.8 A -- -- 3.2 A -- -- 1.5 -- 400 ns -- 739 nC V Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θ JC Junction-to-Case 41.7 ℃/W R θ JA Junction-to-Ambient 200 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=2A, Start TJ=25℃ a3 ：ISD =0.8A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 11 2 0 1 5 V0 1 R ○ CS1N60 A1H Characteristics Curve： 10 Pd , Power Dissipation ,Watts 3.5 Id,Drian current,Amps 1 10μs 10ms 0 .1 100ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0 .0 1 TJ=150℃ TC=25℃ Single Pulse DC 0 .0 0 1 3 2.5 2 1.5 1 0.5 0 1 10 100 1000 25 0 V d s ,D ra in -to -s o u rc e V o lta g e ,V o lts Figure 1 Maximum Forward Bias Safe Operating Area 50 75 100 Tc , Case Temperature , C 150 Figure 2 Maximum Power Dissipation vs Case Temperature 1.6 1 VGS=10V Id,Drain Source,Volts 1.4 Id , Drain Current , Amps 125 0.75 0.5 0.25 1.2 VGS=9V 1 VGS=8V 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 0 0 25 50 75 100 Tc,Case Temperature,C 125 150 0 5 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds,Drain Source Voltage,Volts 25 30 Figure 4 Typical Output Characteristics 1 Thermal Impedance,Normanlized 50% 20% 0.1 10% 5% 0.01 2% 0.001 PDM 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 Single pulse 0.00001 0.00001 t1 t2 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 11 2 0 1 5 V0 1 100 R ○ CS1N60 A1H 10 Idm , Peak Current , Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   1 VGS=10V 0.1 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse W idth , Seconds Figure 6 Maximum Peak Current Capability 1.00E+00 1.00E+01 t 17 Rds(on), Drain to Source ON Resistance , Ohms Id Drain to Source Current,Amps 1.5 1.2 VDS=25V 0.9 0.6 0.3 0 16 ID= 0.8A 15 ID= 0.4A 14 ID= 0.2A 13 12 11 0 2 4 6 8 Vgs,Gate to Source Voltage,Volts 10 Figure 7 Typical Transfer Characteristics 13 VGS=10V 12 11 10 9 0 0.3 0.6 0.9 Id,Drain Current,Amps 4 6 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to Source ON Resistance,Normalized 14 Rds(on),Drain to source ON Resistance. Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 1.2 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 1.5 2 VGS=10V ID=250μA 1.5 1 0.5 0 -100 -50 0 50 100 Tj,Junction Temperature,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 11 2 0 1 5 V0 1 200 R ○ CS1N60 A1H 1.15 Breakdown Voltage,Normalized Vgs(th),Threshold Voltage 1.2 VDS=VGS ID=250μA 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 1.1 ID=250μA 1.05 1.0 0.95 0.9 0.85 -100 200 -50 0 50 100 Tj,Junction Temperature,C Tj,Junction Temperature,C Figure 11 Typical Theshold Voltage vs Junction Temperature 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature 250 14 Vgs,gate to Source Voltage , Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 200 Capacitance,Pf 150 150 100 Ciss 50 Coss 12 10 VDS=480V ID=0.8A 8 6 4 2 Crss 0 0 0 10 20 30 40 50 Vds,Drain to source Voltage,Volts Figure 13 Typical Capacitance vs Drain to Source Voltage 2 3 4 5 Qg,Total gate charge, nc 6 7 Figure 14 Typical Gate Charge vs Gate to Source Voltage 10 1.2 1 Id , Drain Current , Amps Isd,Reverse Drain Current,Amps 1 0 0.8 0.6 +150℃ 0.4 +25℃ 0.2 0 0.4 0.6 0.8 1 Vsd,Source-Drain to source voltages,volts Figure 15 Typical Body Diode Transfer Characteristics STARTING Tj = 150℃ 1 0.1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit -55℃ 0.2 STARTING Tj = 25℃ 1.2 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 11 2 0 1 5 V0 1 CS1N60 A1H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 11 2 0 1 5 V0 1 CS1N60 A1H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ P a g e 8 o f 11 2 0 1 5 V0 1 R ○ CS1N60 A1H Package Information： Items Values(mm) MIN MAX A 4.30 4.90 B 4.30 4.90 C 3.20 3.80 D 1.10 1.50 E 0.30 0.60 F 0.30 0.50 L 12.7 15.50 N 1.07 1.47 TO-92 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 11 2 0 1 5 V0 1 R ○ CS1N60 A1H Symbol Criterion (mm) A1 4.6±0.3 A 4.6±0.3 T Comment 3.5±0.3 □d 0.5±0.05 L1 2.5（min） P 12.7±0.1 P0 12.7±0.3 P2 6.35±0.4 F1,F2 2.6 − 0 .20 △h,△p 0±1.0 Typical cumulative error±1.0/20 P0 + 0 .30 W 18.0 +1.0 W0 6.0±0.3 W1 9.0±0.5 W2 0.5MAX H 19.0±1.0 H0 16.0±0.5 H1 23.5±1 H2 3.5±1 α 130°-155° ФD0 4.0±0.2 t 0.8±0.2 H* 1.5-2.0 L 11.0MAX − 0.5 Backing paper Thickness 0.4±0.02 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 11 2 0 1 5 V0 1 R ○ CS1N60 A1H The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 11 o f 11 2 0 1 5 V0 1