CS1N60A3H

Silicon N-Channel Power MOSFET R ○ CS1N60 A3H General Description： VDSS 600 V ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 25 W which reduce the conduction loss, improve switching R DS(ON)Typ 11 Ω CS1N60 A3H, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDM VGS a2 EAS EAR IAR a1 a1 dv/dt Rating Units Drain-to-Source Voltage 600 V Continuous Drain Current 0.8 A Continuous Drain Current T C = 100 °C 0.6 A Pulsed Drain Current 3.2 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 20 mJ Avalanche Energy ,Repetitive 6 mJ 1.1 A 5 V/ns Power Dissipation 25 W Derating Factor above 25°C 0.2 W/℃ 150，–55 to 150 ℃ 300 ℃ Avalanche Current a3 PD Peak Diode Recovery dv/dt TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 5 V0 1 CS1N60 A3H R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Min. Typ. Max. 600 -- -- ID=250uA,Reference25℃ -- 0.55 -- VDS = 600V, V GS= 0V, Ta = 25℃ VDS =480V, V GS= 0V, -- -- 1 Ta = 125℃ -- -- 100 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =0.4A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Test Conditions Units Min. Typ. Max. -- 11 15 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =0.8A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 0.9 -- -- 92 -- -- 10.7 -- -- 2.6 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =0.8A VDD = 300V VGS = 10V RG = 25Ω ID =0.8A V DD =300V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 6.3 -- -- 6.3 -- -- 21 -- -- 15 -- -- 4 -- 0.7 -- 2.1 Page 2 of 10 Units ns nC 2 0 1 5 V0 1 CS1N60 A3H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage IS =0.8A,VGS =0V trr Reverse Recovery Time IS =0.8A,Tj = 25°C Qrr Reverse Recovery Charge dIF /dt=100A/us, V GS=0V Rating Test Conditions Units Min. Typ. Max. -- -- 0.8 A -- -- 3.2 A -- -- 1.5 -- 400 ns -- 739 nC V Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 5.0 ℃/W R θJA Junction-to-Ambient 62 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=2A, Start TJ=25℃ a3 ：ISD =0.8A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 5 V0 1 CS1N60 A3H R ○ Characteristics Curve： Id,Drian current,Amps 1 Pd , Power Dissipation ,Watts 10 10μs 10ms 0 .1 100ms 0 .0 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) DC TJ=150℃ TC=25℃ Single Pulse 0 .0 0 1 1 10 100 30 20 10 0 50 75 100 Tc , Case Temperature , C 25 0 1000 V d s ,D ra in -to -s o u rc e V o lta g e ,V o lts Figure 1 Maximum Forward Bias Safe Operating Area 150 Figure 2 Maximum Power Dissipation vs Case Temperature 1.6 1 VGS=10V Id,Drain Source,Volts 1.4 Id , Drain Current , Amps 125 0.75 0.5 0.25 1.2 VGS=9V 1 VGS=8V 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 0 0 25 50 75 100 Tc,Case Temperature,C 125 150 0 5 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds,Drain Source Voltage,Volts 25 30 Figure 4 Typical Output Characteristics 1 Thermal Impedance,Normanlized 50% 20% 0.1 10% 5% 0.01 2% 0.001 PDM 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 Single pulse 0.00001 0.00001 t1 t2 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 1 0 2 0 1 5 V0 1 100 CS1N60 A3H R ○ 10 Idm , Peak Current , Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   1 VGS=10V 0.1 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse W idth , Seconds Figure 6 Maximum Peak Current Capability 1.00E+00 1.00E+01 t 17 Rds(on), Drain to Source ON Resistance , Ohms Id Drain to Source Current,Amps 1.5 1.2 VDS=25V 0.9 0.6 0.3 0 16 ID= 0.8A 15 ID= 0.4A 14 ID= 0.2A 13 12 11 0 2 4 6 8 Vgs,Gate to Source Voltage,Volts 10 Figure 7 Typical Transfer Characteristics 4 6 8 10 12 Vgs , Gate to Source Voltage，Volts 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 14 2.5 Rds(on),Drain to Source ON Resistance,Normalized Rds(on),Drain to source ON Resistance. Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 13 VGS=10V 12 11 10 9 0 0.3 0.6 0.9 Id,Drain Current,Amps 1.2 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 1.5 2 VGS=10V ID=250μA 1.5 1 0.5 0 -100 -50 0 50 100 Tj,Junction Temperature,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 1 5 V0 1 200 CS1N60 A3H 1.15 Breakdown Voltage,Normalized 1.2 Vgs(th),Threshold Voltage R ○ VDS=VGS ID=250μA 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 1.1 ID=250μA 1.05 1.0 0.95 0.9 0.85 -100 200 -50 0 50 100 Tj,Junction Temperature,C Tj,Junction Temperature,C 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature 250 14 Vgs,gate to Source Voltage , Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 200 Capacitance,Pf 150 150 Ciss 100 50 Coss Crss 0 0 12 10 VDS=480V ID=0.8A 8 6 4 2 0 10 20 30 40 Vds,Drain to source Voltage,Volts 1 0 50 Figure 13 Typical Capacitance vs Drain to Source Voltage 2 3 4 5 Qg,Total gate charge, nc 6 7 Figure 14 Typical Gate Charge vs Gate to Source Voltage 1.2 1 Id , Drain Current , Amps Isd,Reverse Drain Current,Amps 10 0.8 0.6 0.4 +150℃ +25℃ 0.2 -55℃ 0 0.2 0.4 0.6 0.8 1 Vsd,Source-Drain to source voltages,volts 1.2 Figure 15 Typical Body Diode Transfer Characteristics STARTING Tj = 25℃ STARTING Tj = 150℃ 1 0.1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 1 0 2 0 1 5 V0 1 CS1N60 A3H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 5 V0 1 CS1N60 A3H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Page 8 of 1 0 2 0 1 5 V0 1 CS1N60 A3H R ○ Package Information： Items A B C D E F G H L M N Values(mm) MIN 6.30 5.70 2.10 0.30 0.50 0.30 0.70 1.60 7.70 6.00 4.50 2.10 5.10 2.09 MAX 6.90 6.30 2.50 0.60 0.70 0.60 1.00 2.40 9.80 6.30 5.80 3.70 5.50 2.49 TO-251 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 5 V0 1 CS1N60 A3H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2015V01