CS1N60A4H

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS1N60 A4H General Description： VDSS 600 V ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω CS1N60 A4H, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDM VGS EAR IAR Units Drain-to-Source Voltage 600 V Continuous Drain Current 0.8 A Continuous Drain Current TC = 100 °C 0.6 A Pulsed Drain Current 3.2 A ±30 V Single Pulse Avalanche Energy 20 mJ Avalanche Energy ,Repetitive 6 mJ 1.1 A 5 V/ns Power Dissipation 25 W Derating Factor above 25°C 0.2 W/℃ 150，–55 to 150 ℃ 300 ℃ Gate-to-Source Voltage a2 EAS Rating a1 a1 dv/dt Avalanche Current a3 PD Peak Diode Recovery dv/dt TJ，Tstg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS1N60 A4H R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current V DS = 600V, VGS = 0V, T a = 25℃ V DS =480V, V GS = 0V, IDSS Rating Test Conditions Units Min. Typ. Max. 600 -- -- V -- 0.55 -- V/℃ -- -- 1 T a = 125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- -100 nA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =0.4A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 11 15 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =0.8A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 0.9 -- -- 92 -- -- 10.7 -- -- 2.6 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =0.8A V DD = 300V V GS = 10V RG = 25Ω I D =0.8A V DD =300V V GS = 10V Min. Typ. Max. -- 6.3 -- -- 6.3 -- -- 21 -- -- 15 -- -- 4 -- 0.7 -- 2.1 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2012 Huajing Discrete Devices CS1N60 A4H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 0.8 A ISM Maximum Pulsed Current (Body Diode) -- -- 3.2 A VSD Diode Forward Voltage I S =0.8A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time I S =0.8A,T j = 25°C -- 400 ns Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 739 nC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Rθ JC Junction-to-Case 5.0 ℃/W Rθ JA Junction-to-Ambient 62 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=2A, Start TJ=25℃ a3 ：ISD =0.8A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2012 Huajing Discrete Devices CS1N60 A4H R ○ Characteristics Curve： Id,Drian current,Amps 1 Pd , Power Dissipation ,Watts 10 10μs 10ms 0 .1 100ms 0 .0 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) DC TJ=150℃ TC=25℃ Single Pulse 0 .0 0 1 1 10 100 30 20 10 0 25 0 1000 V d s,D ra in -to -s o u rc e V o lta g e ,V o lts Figure 1 Maximun Forward Bias Safe Operating Area 50 75 100 Tc , Case Temperature , C 150 Figure 2 Maximun Power Dissipation vs Case Temperature 1.6 1 VGS=10V Id,Drain Source,Volts 1.4 Id , Drain Current , Amps 125 0.75 0.5 0.25 1.2 VGS=9V 1 VGS=8V 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 0 0 25 50 75 100 Tc,Case Temperature,C 125 150 0 5 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds,Drain Source Voltage,Volts 25 30 Figure 4 Typical Output Characteristics 1 Thermal Impedance,Normanlized 50% 20% 0.1 10% 5% 0.01 2% 0.001 PDM 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 Single pulse 0.00001 0.00001 t1 t2 0.0001 0.001 0.01 0.1 1 10 100 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 A4H 10 Idm , Peak Current , Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   1 VGS=10V 0.1 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse W idth , Seconds Figure 6 Maximun Peak Current Capability 1.00E+00 1.00E+01 t 17 Rds(on), Drain to Source ON Resistance , Ohms Id Drain to Source Current,Amps 1.5 1.2 VDS=25V 0.9 0.6 0.3 0 16 ID= 0.8A 15 ID= 0.4A 14 ID= 0.2A 13 12 11 0 2 4 6 8 Vgs,Gate to Source Voltage,Volts 10 Figure 7 Typical Transfer Characteristics 13 VGS=10V 12 11 10 9 0 0.3 0.6 0.9 Id,Drain Current,Amps 4 6 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to Source ON Resistance,Normalized 14 Rds(on),Drain to source ON Resistance. Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 1.2 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 1.5 2 VGS=10V ID=250μA 1.5 1 0.5 0 -100 -50 0 50 100 Tj,Junction Temperature,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2012 200 Huajing Discrete Devices 1.15 Breakdown Voltage,Normalized Vgs(th),Threshold Voltage 1.2 VDS=VGS ID=250μA 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 200 1.1 ID=250μA 1.05 1.0 0.95 0.9 0.85 -100 -50 0 50 100 Tj,Junction Temperature,C Tj,Junction Temperature,C Figure 11 Typical Theshold Voltage vs Junction Temperature 150 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature 250 150 100 Ciss 50 Coss Vgs,gate to Source Voltage , Volts 14 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 200 Capacitance,Pf CS1N60 A4H R ○ 12 10 VDS=480V ID=0.8A 8 6 4 2 Crss 0 0 0 10 20 30 40 50 Vds,Drain to source Voltage,Volts Figure 13 Typical Capacitance vs Drain to Source Voltage 0 2 3 4 5 Qg,Total gate charge, nc 6 7 Figure 14 Typical Gate Charge vs Gate to Source Voltage 1.2 10 1 0.8 0.6 +150℃ 0.4 +25℃ 0.2 -55℃ 0 0.2 0.4 0.6 0.8 1 1.2 Vsd,Source-Drain to source voltages,volts Figure 15 Typical Body Diode Transfer Characteristics Id , Drain Current , Amps Isd,Reverse Drain Current,Amps 1 STARTING Tj = 25℃ STARTING Tj = 150℃ 1 0.1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 A4H TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 A4H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 A4H Package Information： Items Values(mm) MIN MAX A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 D 0.40 0.60 E1 0.60 0.80 E2 0.70 0.90 F 0.40 0.60 G 0.80 1.00 L1 9.70 10.20 L2 2.70 3.10 H 0.60 0.90 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 A4H The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2012