CS1N60C1HD

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS1N60 C1HD General Description： CS1N60 C1HD, the silicon N-channel Enhanced VDSS 600 V ID 1.5 A 3 W 7.0 Ω VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) which reduce the conduction loss, improve switching RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDM VGS EAR IAR Units Drain-to-Source Voltage 600 V Continuous Drain Current 1.5 A Continuous Drain Current TC = 100 °C 0.85 A Pulsed Drain Current 6.0 A ±30 V Single Pulse Avalanche Energy 80 mJ Avalanche Energy ,Repetitive 8 mJ Avalanche Current 1.3 A Peak Diode Recovery dv/dt 5.0 V/ns 3 W 0.024 W/℃ 1500 V 150，–55 to 150 ℃ 300 ℃ Gate-to-Source Voltage a2 EAS Rating a1 a1 dv/dt a3 PD Power Dissipation Derating Factor above 25°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) TJ，Tstg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS1N60 C1HD R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current V DS = 600V, VGS = 0V, T a = 25℃ V DS =480V, V GS = 0V, IDSS Rating Test Conditions Units Min. Typ. Max. 600 -- -- V -- 0.71 -- V/℃ -- -- 25 T a = 125℃ -- -- 250 µA IGSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- -10 µA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =0.75A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 7.0 8.0 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =0.75A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 1.0 -- -- 170 -- -- 27 -- -- 5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =1.5A V DD = 300V V GS = 10V RG = 4.7Ω I D =1.5A V DD =480V V GS = 10V Min. Typ. Max. -- 8 -- -- 30 -- -- 22 -- -- 55 -- -- 7.5 -- 1.7 -- 4.0 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2012 Huajing Discrete Devices CS1N60 C1HD R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 1.5 A ISM Maximum Pulsed Current (Body Diode) -- -- 6.0 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 530 ns Qrr Reverse Recovery Charge -- 1100 nC IRRM Reverse Recovery Current -- 4.4 A I S =1.5A,V GS =0V I S =1.5A,T j = 25°C dI F/dt=100A/us, V GS =0V Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Rθ JC Junction-to-Case 41.7 ℃/W Rθ JA Junction-to-Ambient 200 ℃/W Units Gate-source Zener diode Symbol Parameter VGSO Gate-source breakdown voltage Rating Test Conditions Min. I GS = ±1mA(Open Drain) Typ. Max. Units 30 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=4A, Start TJ=25℃ a3 ：ISD =1.5A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD Characteristics Curve： 10 Pd , Power Dissipation ,Watts 3.5 Id,Drian current,Amps 10μs 1 10ms 100ms 0 .1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) DC 0 .0 1 TJ=150℃ TC=25℃ Single Pulse 0 .0 0 1 1 10 100 V d s ,D r a in - to - s o u r c e V o lta g e ,V o lts 2.5 2 1.5 1 0.5 0 1000 1 .5 1.4 Id,Drain Source,Volts 1.6 1 0 .7 5 0 .5 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 1 .7 5 1 .2 5 25 0 Figure 1 Maximun Forward Bias Safe Operating Area Id , Drain Current ,Amps 3 0 .2 5 VGS=10V 1.2 VGS=9V 1 VGS=8V 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 0 0 0 25 50 75 100 T c , C a se T e m p e ra tu re ,C 125 150 0 5 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds,Drain Source Voltage,Volts 25 30 Figure 4 Typical Output Characteristics 1 Thermal Impedance,Normanlized 50% 20% 0.1 10% 5% 0.01 2% 0.001 PDM 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 Single pulse 0.00001 0.00001 t1 t2 0.0001 0.001 0.01 0.1 1 10 100 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION  150 − TC  I = I 25   125   Idm , Peak Current , Amps 10 1 VGS=10V 0 .1 1 .0 0 E -0 5 1 .0 0 E - 0 4 1 .0 0 E - 0 3 1 .0 0 E -0 2 1 .0 0 E -0 1 t , P u ls e W id th , S e c o n d s Rds(on), Drain to Source ON Resistance , Ohms 1.2 VDS=25V 0.9 0.6 0.3 1 .0 0 E + 0 1 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 11 ID=1.5A 10 ID0.75A 9 ID= 0.375A 8 7 6 0 0 2 4 6 8 Vgs,Gate to Source Voltage,Volts 10 Figure 7 Typical Transfer Characteristics 13 VGS=10V 12 11 10 9 0 0.3 0.6 0.9 Id,Drain Current,Amps 4 6 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to Source ON Resistance,Normalized 14 Rds(on),Drain to source ON Resistance. Ohms 1 .0 0 E + 0 0 Figure 6 Maximun Peak Current Capability 12 1.5 Id Drain to Source Current,Amps FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS: 1.2 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 1.5 2 VGS=10V ID=250μA 1.5 1 0.5 0 -100 -50 0 50 100 Tj,Junction Temperature,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2012 200 Huajing Discrete Devices 1.15 Breakdown Voltage,Normalized Vgs(th),Threshold Voltage 1.2 VDS=VGS ID=250μA 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 1.1 ID=250μA 1.05 1.0 0.95 0.9 0.85 -100 200 -50 0 50 100 Tj,Junction Temperature,C Tj,Junction Temperature,C 150 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature 250 14 Vgs,gate to Source Voltage , Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 200 Capacitance,Pf CS1N60 C1HD R ○ 150 100 Ciss 50 12 10 VDS=480V ID=1.5A 8 6 4 2 Coss Crss 0 0 0 10 20 30 40 Vds,Drain to source Voltage,Volts Figure 13 Typical Capacitance vs Drain to Source Voltage 4 6 8 10 Qg,Total gate charge, nc 12 14 Figure 14 Typical Gate Charge vs Gate to Source Voltage 1.2 10 1 0.8 0.6 +150℃ 0.4 +25℃ 0.2 -55℃ 0 0.2 0.4 0.6 0.8 1 1.2 Vsd,Source-Drain to source voltages,volts Figure 15 Typical Body Diode Transfer Characteristics Id , Drain Current , Amps Isd,Reverse Drain Current,Amps 2 0 50 STARTING Tj = 25℃ STARTING Tj = 150℃ 1 0.1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD Package Information： Items Values(mm) MIN MAX A 4.30 4.90 B 4.30 4.90 C 3.20 3.80 D 1.20 1.40 E 0.40 0.60 F 0.30 0.50 L 12.70 15.50 N 1.07 1.47 TO-92 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2012 Huajing Discrete Devices R ○ CS1N60 C1HD The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2012