CS20N60FA9H

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS20N60F A9H General Description： CS20N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology VDSS 600 V ID 20 A PD(TC=25℃) 85 W 0.36 Ω RDS(ON)Typ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID a1 IDM VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD Rating Units 600 V Continuous Drain Current 20 A Continuous Drain Current TC = 100 °C 14 A Pulsed Drain Current 80 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 1200 mJ Avalanche Energy ,Repetitive 100 mJ Avalanche Current 4.5 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 85 W 0.68 W/℃ 150，–55 to 150 ℃ 300 ℃ Derating Factor above 25°C TJ，Tstg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS20N60F A9H R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Rating Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current V DS = 600V, VGS = 0V, T a = 25℃ V DS =480V, V GS = 0V, T a = 125℃ IGSS(F) Gate to Source Forward Leakage V GS = 30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- -100 nA Units Min. Typ. Max. 600 -- -- V -- 0.65 -- V/℃ -- -- 1 µA 100 ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =10A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 0.36 0.45 Ω 2.0 -- 4.0 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =10A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 17 -- -- 2847 -- 252 -- 20 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =20A V DD = 300V R G = 25Ω I D =20A V DD =300V V GS = 10V Min. Typ. Max. -- 36 -- 73 -- 166 -- 73 -- 61 -- 14 -- -- 24 -- Units ns W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 nC 2012 Huajing Discrete Devices CS20N60F A9H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 20 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage I S =20A,VGS =0V -- -- 1.5 V trr Reverse Recovery Time I S =20A,Tj = 25°C -- 425 Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 3.7 Qrr --- ns µC Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Rθ JC Junction-to-Case 1.47 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=15.5A, Start T J=25℃ a3 ：ISD =20A,di/dt ≤200A/us,VDD ≤BVDSS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2012 Huajing Discrete Devices CS20N60F A9H R ○ Characteristics Curve： Id , Drain Current , Amps 10μs 100μs 10 1 ms 10 ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 1 DC Pd , Power Dissipation ,Watts 100 90 60 30 0 1 10 100 Vds , Drain-to-Source Voltage , Volts 1000 Figure 1 Maximun Forward Bias Safe Operating Area 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 70 25 First: 15V 8V 7V 6.5V 6V Sixth: 5.5V 60 20 Id , Drain Current , Amps Id , Drain Current , Amps 25 0 0.1 15 10 5 50 PULSE TEST Tc = 25℃ First 40 30 20 Sixth 10 0 0 0 25 50 75 100 TC , Case Temperature , C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 10 20 30 40 Vds , Drain-to-Source Voltage , Volts 50 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 0.1 20% 10% PDM 5% 2% 0.01 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC Single pulse 0.001 0.00001 0.0001 t1 t2 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 10 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2012 Huajing Discrete Devices R ○ CS20N60F A9H Idm , Peak Current , Amps 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   100 VGS=10V 10 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width , Seconds t 1.00E+01 1.00E+00 Figure 6 Maximun Peak Current Capability 1.4 PULSED TEST VDS=50V Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current , Amps 100 10 1 +150℃ +25℃ 1.2 1 ID= 18A 0.8 ID= 9A 0.6 ID = 4.5A 0.4 0.2 -55℃ 0 0.1 2 4 6 8 Vgs , Gate to Source Voltage , Volts 4 10 6 8 10 12 Vgs , Gate to Source Voltage，Volts 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics 1 3 PULSED TEST Tc =25 ℃ 2.5 Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 0.8 VGS=10V 0.6 VGS=10V ID=3.0A 2 1.5 VGS=20V 0.4 0.2 1 0.5 0 0 10 20 30 40 50 60 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current 70 0 -100 -50 0 50 100 Tj, Junction temperature , C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2012 200 Bvdss,Drain to Source Breakdown Voltage, Normalized Huajing Discrete Devices 1.2 1.1 1 1.1 0.9 0.8 0.7 0.6 0.5 0.4 -75 -50 -25 VGS=0V ID=250μA 0.8 -100 0 25 50 75 100 125 150 175 Tj, Junction temperature , C -50 0 50 100 Tj, Junction temperature , C 150 200 Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature 5000 12 4000 Capacitance , pF 1 0.9 VGS=0V ID=250μA Vgs , Gate to Source Voltage ,Volts Vgs(th),Threshold Voltage, Nomalized 1.2 CS20N60F A9H R ○ 3000 Ciss 2000 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 1000 Coss Crss 8 VDS=120V VDS=300V VDS=480V 6 4 2 0 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 0 100 Figure 13 Typical Capacitance vs Drain to Source Voltage 100 15 30 45 Qg , Total Gate Charge , nC 60 75 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 PULSE VGS=0V 10 TEST Id , Drain Current , Amps Isd, Reverse Drain Current , Amps VDD=200V ID=18A Tc =25℃ 10 150℃ 25℃ 1 STARTING Tj = 25℃ STARTING Tj = 150℃ 10 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 0 0.4 0.8 1.2 Vsd , Source - Drain Voltage , Volts 1.6 Figure 15 Typical Body Diode Transfer Characteristics 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2012 Huajing Discrete Devices R ○ CS20N60F A9H TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2012 Huajing Discrete Devices R ○ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . CS20N60F A9H Page 8 of 10 2012 Huajing Discrete Devices R ○ CS20N60F A9H Package Information： Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 C 4.40 4.90 C1 2.10 2.60 D 2.50 2.90 E 0.70 0.90 F 0.35 0.55 G 1.12 1.42 H 3.40 3.80 L 12.00 14.00 N 2.34 2.74 3.00 3.30 TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2012 Huajing Discrete Devices CS20N60F A9H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2012