CS20N65FA9H

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H General Description： CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology VDSS 650 V ID 20 A PD(TC=25℃) 85 W 0.37 Ω RDS(ON)Typ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD Rating Units Drain-to-Source Voltage 650 V Continuous Drain Current 20 A Continuous Drain Current T C = 100 °C 14 A Pulsed Drain Current 80 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 550 mJ Avalanche Energy ,Repetitive 50 mJ Avalanche Current 3.2 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 85 W 0.68 W/℃ 150，–55 to 150 ℃ 300 ℃ Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS20N65F A9H R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient IDSS Drain to Source Leakage Current IGSS(F) IGSS(R) Rating Units Min. Typ. Max. 650 -- -- ID=250uA,Reference25℃ -- 0.5 -- VDS = 650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, Ta = 125℃ -- -- 1 Gate to Source Forward Leakage VGS= 30V -- -- 100 nA Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA V V/℃ µA 100 ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =10A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.37 0.5 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =10A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 17 -- -- 2400 -- 225 -- 20 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =20A VDD = 325V RG = 25Ω ID =20A V DD =325V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. -- 35 -- 82 -- 180 -- 90 -- 65 -- 11 -- -- 26 -- Pag e 2 of 1 0 Max. Units ns nC 2 0 1 5 V0 1 CS20N65F A9H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 20 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage IS =20A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS =20A,Tj = 25°C -- 390 Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 3.4 Qrr --- ns µC Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 1.47 ℃/W R θJA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=10.5A, Start T J=25℃ a3 ：ISD =20A,di/dt ≤200A/us,VDD≤BV DSS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS20N65F A9H R ○ Characteristics Curve： Id , Drain Current , Amps 10μs 100μs 10 1 ms 10 ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 1 DC Pd , Power Dissipation ,Watts 100 90 60 30 0 0.1 1 10 100 Vds , Drain-to-Source Voltage , Volts 1000 Figure 1 Maximum Forward Bias Safe Operating Area 0 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 70 25 First: 15V 8V 7V 6.5V 6V Sixth: 5.5V 60 20 Id , Drain Current , Amps Id , Drain Current , Amps 25 15 10 5 50 PULSE TEST Tc = 25℃ First 40 30 20 Sixth 10 0 0 0 25 50 75 100 TC , Case Temperature , C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 10 20 30 40 Vds , Drain-to-Source Voltage , Volts 50 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 0.1 20% 10% PDM 5% 2% 0.01 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC Single pulse 0.001 0.00001 0.0001 t1 t2 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 10 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS20N65F A9H Idm , Peak Current , Amps 1000 R ○ TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150 − TC  I = I 25   125   100 VGS=10V 10 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width , Seconds Figure 6 MaximumPeak Current Capability 1.00E+00 1.00E+01 t 1.4 PULSED TEST VDS=50V Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current , Amps 100 10 1 +150℃ +25℃ 1.2 1 ID= 18A 0.8 ID= 9A 0.6 ID = 4.5A 0.4 0.2 -55℃ 0 0.1 2 4 6 8 Vgs , Gate to Source Voltage , Volts 4 10 6 8 10 12 Vgs , Gate to Source Voltage，Volts 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics 3 1 PULSED TEST Tc =25 ℃ 2.5 Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 0.8 VGS=10V 0.6 VGS=10V ID=3.0A 2 1.5 VGS=20V 0.4 0.2 1 0.5 0 0 10 20 30 40 50 60 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current 70 0 -100 -50 0 50 100 Tj, Junction temperature , C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 200 Bvdss,Drain to Source Breakdown Voltage, Normalized CS20N65F A9H 1.2 Vgs(th),Threshold Voltage, Nomalized 1.2 1.1 1.1 1 0.9 0.8 0.7 0.6 1 0.9 VGS=0V ID=250μA 0.5 0.4 -75 -50 -25 VGS=0V ID=250μA 0.8 -100 0 25 50 75 100 125 150 175 Tj, Junction tem perature , C -50 0 50 100 Tj, Junction temperature , C 150 200 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature 5000 Vgs , Gate to Source Voltage ,Volts 12 4000 Capacitance , pF R ○ 3000 Ciss 2000 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 1000 Coss Crss VDD=200V ID=18A Tc =25℃ 10 8 VDS=120V VDS=300V VDS=480V 6 4 2 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 0 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 30 45 Qg , Total Gate Charge , nC 60 75 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 100 PULSE VGS=0V 10 TEST Id , Drain Current , Amps Isd, Reverse Drain Current , Amps 15 150℃ 25℃ 1 0.1 0 0.4 0.8 1.2 Vsd , Source - Drain Voltage , Volts Figure 15 Typical Body Diode Transfer Characteristics 1.6 STARTING Tj = 25℃ 10 STARTING Tj = 150℃ 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 tav , Time in Avalanche , Seconds 1.00E-01 Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS20N65F A9H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS20N65F A9H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS20N65F A9H R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS20N65F A9H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd ≤0.1% ≤0.1% ≤0.01% Cr(VI) ≤0.1% PBB PBDE ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1