CS25N06B4

Silicon N-Channel Power MOSFET R ○ CS25N06 B4 General Description： VDSS 60 V ID 25 A is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 50 W the conduction loss, improve switching performance and RDS(ON)Typ 28 mΩ CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, enhance the avalanche energy. The transistor can be used in variou power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM Rating Units Drain-to-Source Voltage 60 V Continuous Drain Current 25 A Continuous Drain Current T C = 100 °C a1 A ±20 V Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 50 W 0.33 W/℃ 175，–55 to 175 ℃ 300 ℃ Gate-to-Source Voltage a2 PD A 80 Pulsed Drain Current VGS dv/dt 18 Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 of 1 0 2 0 1 5 V0 1 CS25N06 B4 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage ΔBVDSS/ΔT J IDSS Rating Test Conditions Units Min. Typ. Max. VGS=0V, ID =250µA 60 -- -- V Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.05 -- V/℃ -- -- 1 Drain to Source Leakage Current VDS =60V, V GS= 0V, Ta = 25℃ VDS =48V, V GS= 0V, Ta = 125℃ -- -- 10 µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =18A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 28 36 mΩ 3.0 V 1.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=30V, ID =18A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 17 -- -- 1296 -- -- 117 -- -- 87 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =18A VDD = 30V VGS = 10V RG =3.3Ω ID =18A V DD =30V VGS =4.5V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 8 -- -- 19 -- -- 34 -- -- 7 -- -- 13 -- 6.8 -- -- 4 -- Pag e 2 of 1 0 Units 2 0 1 5 V0 1 ns nC CS25N06 B4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 25 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage IS =25A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS =25A,Tj = 25°C -- 53 ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 86 nC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter R θ JC Junction-to-Case R θ JA Junction-to-Ambient a1 a2 Typ. Units 3.0 ℃/W 62.5 ℃/W ：Repetitive rating; pulse width limited by maximum junction temperature ：ISD =25A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 of 1 0 2 0 1 5 V0 1 CS25N06 B4 R ○ Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS25N06 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ P a g e 5 of 1 0 2 0 1 5 V0 1 CS25N06 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2 0 1 5 V0 1 CS25N06 B4 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 of 1 0 2 0 1 5 V0 1 CS25N06 B4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS25N06 B4 R ○ Package Information Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.00 L1 9.60 10.30 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 of 1 0 2 0 1 5 V0 1 CS25N06 B4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn HTU Tel: +86 0510-85807228 Marketing Part： Post：214061 UTH Fax: +86- 0510-85800864 E-mail：sales@hj.crmicro.com Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1