CS25N06C4

Silicon N-Channel Power MOSFET R ○ CS25N06 C4 General Description： CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W performance and enhance the avalanche energy. This device is R DS(ON)Typ 23 mΩ suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤29mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger; LED backlight driver; Synchronous rectification Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDM a1 VGS EAS a2 PD TJ，T stg Rating Units Drain-to-Source Voltage 60 V Continuous Drain Current T C= 25 °C 25 A Continuous Drain Current T C = 100 °C 17.5 A Pulsed Drain Current T C= 25 °C 100 A Gate-to-Source Voltage ±20 V Avalanche Energy 56.2 mJ Power Dissipation T C = 25 °C 36.2 W Derating Factor above 25 ℃ 0.29 W/℃ 150，–55 to 150 ℃ Operating Junction and Storage Temperature Range W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 9 V0 1 CS25N06 C4 R ○ Electrical Characteristics（Tj= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA IDSS Drain to Source Leakage Current VDS =60V, V GS= 0V, Tj = 25℃ VDS =48V, V GS= 0V, Tj = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Units Min. Typ. Max. 60 -- -- -- -- 1 -- -- 100 VGS=20V -- -- 100 nA VGS =-20V -- -- -100 nA V µA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions Rating Units Min. Typ. Max. VGS=10V,ID =19A -- 23 29 mΩ VGS=4.5V,ID =19A -- 30 38 mΩ 1.0 1.5 2.0 V VDS = V GS, ID = 250µA Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rg Gate resistance f=1MHz C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS =30V f = 1.0MHz Rating Min. Typ. Max. -- 1.9 -- -- 939 -- -- 73.5 -- -- 52.7 -- Units Ω pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions VGS =10V，RG=3Ω VDD =30V，ID =20A ID =20A V DD =30V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 8.4 -- -- 8.5 -- -- 35.4 -- -- 4.8 -- -- 21.2 -- -- 3.6 -- -- 5.5 -- Pag e 2 of 1 0 Units 2 0 1 9 V0 1 ns nC CS25N06 C4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Rating Units Min. Typ. Max. -- -- 25 A -- -- 100 A -- -- 1.2 V -- 18.8 -- ns -- 13.4 -- nC TC = 25℃ IS=20A,VGS =0V di/dt=100A/us IF=20A Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 3.45 ℃/W R θ JA Junction-to-Ambient 111.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=0.5mH,VDD=30V,Ias=15A Start TJ=25℃ a3 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 9 V0 1 CS25N06 C4 R ○ Characteristics Curve： 1000 40 35 10μs 100 10 PD,Power Dissipation,W ID ,Drain Current,A 30 100μs 1 1ms Operation in This Area is Limited by RDS(on) DC 10ms 25 20 15 10 0.1 SINGLE PULSE TC =25℃ TJ =150℃ 5 0 0.01 0.1 1 10 0 100 25 Figure 1 75 100 125 150 Figure 2. Maximum Power Dissipation vs Case Temperature . Maximum Safe Operating Area 30 50 Vgs =5V 、5.5V、 6V、 10V 45 Vgs=4.5V 25 40 35 20 ID,Drain Current[A] ID ,Drain Current,A 50 TC ,Case Temperature,℃ V DS,Drain-to-Source Voltage,V 15 10 Vgs=4.0V 30 25 20 15 Vgs=3.5V 10 5 Note : 1.250us Pulse Te st 2.Tc=25℃ 5 0 0 25 50 75 100 125 150 0 1 2 3 4 5 VDS,Drain-to-Source Voltage[V] TC ,Case Temperature,℃ Figure 3. Maximum Continuous Drain Current vs Case Temperature Figure 4. Typical output Characteristics 10 D=1 ZθJC,Thermal Response[℃/W] 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJA + TA 0.0001 0.001 0.01 0.1 1 10 T , Rectangular Pulse Duration [sec] Figure 5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2 0 1 9 V0 1 CS25N06 C4 100 R ○ 100 Note: 1.VDS=5V 2.250us Pulse Test Is,Source Current[A] ID,Drain Current[A] 10 Tj=150℃ 1 Tj=25℃ 10 Tj=150℃ Tj=25℃ 1 0.1 0.01 0.1 0 1 2 3 4 5 0 0.2 VGS ,Gate-to-Source Voltage[V] 40.0 0.8 1 1.2 1.4 2.5 PULSED TEST Tj = 25℃ 35.0 VGS = 4.5V 30.0 25.0 PULSED TEST VGS = 10V ID = 19A RDS(on),(Normalized) Drain-to-Source On Resistance RDS(on),Drain-to-Source On Resistance,mΩ 0.6 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics VGS = 10V 20.0 2 1.5 1 0.5 15.0 0 0 5 10 15 20 25 -50 I D ,Drain Current,A 0 50 100 150 TJ,Junction Temperature(℃ ) Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature 1.2 1.11.2 VGS = VDS ID = 250μA 1.08 1.15 1.06 BVDSS,(Normalized) BVDSS,(Normalized) Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage 1.1 1 VGS(th),(Normalized) Threshold Voltage 0.4 VSD ， Source-to-Drain Voltage[V] 1.041.1 0.9 1.02 1.05 1 0.8 0.98 1 0.7 0.96 0.95 0.6 0.94 0.5 -50 0 50 100 150 TJ,Junction Temperature(℃ ) Figure10. Normalized Threshold Voltage vs Junction Temperature 0.920.9 -100 -50 -50 0 0 50 50 100 100 150 200 150 Temperature(℃ J,JunctionTemperature(℃ TT )) J,Junction Figure 11. Normalized Breakdown Voltage vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 1 9 V0 1 CS25N06 C4 R ○ Ciss 1000 Capacitance,pF Vgs,Gate-to-Source Voltage[V] 10 Coss 100 f = 1MHz Ciss = Cgs +Cgd Coss = Cds +Cgd Crss = Cgd Crss 8 6 VDS=30V I D=20A 4 2 0 10 0 20 V DS,Drain-to-Source Voltage,V 40 Figure 12. Capacitance Characteristics 0 5 10 15 20 25 Qg,Gate Charge[nC] Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 0 1 9 V0 1 CS25N06 C4 R ○ Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 9 V0 1 CS25N06 C4 Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2 0 1 9 V0 1 CS25N06 C4 R ○ Package Information： Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.16 B 5.70 6.30 C 2.10 2.50 D 0.30 0.70 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.40 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 9 V0 1 CS25N06 C4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 9 V0 1