CS25N10A4

Silicon N-Channel Power MOSFET R ○ CS25N10 A4 General Description ： VDSS 100 V Enhanced ID 25 A VDMOSFETs, is obtained by the high density Trench PD 56.8 W technology which reduce the conduction loss, improve switching RDS(ON)Typ 29 mΩ CS25N10 A4, the silicon N-channel performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified） Symbol Parameter VDSS Drain-to-Source Voltage ID a1 IDM VGS EAS a2 PD TJ，Tstg Rating Units 100 V Continuous Drain Current TC = 25 °C 25 A Continuous Drain Current TC = 100 °C 18.5 A Pulsed Drain Current TC = 25 °C 100 A Gate-to-Source Voltage ±20 V Avalanche Energy 118 mJ Power Dissipation TC = 25 °C 56.8 W Derating Factor above 25°C 0.45 W/℃ 150，–55 to 150 ℃ Operating Junction and Storage Temperature Range W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA IDSS Drain to Source Leakage Current VDS =100V, VGS= 0V, TJ = 25℃ VDS =80V, VGS= 0V, TJ= 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Units Min. Typ. Max. 100 -- -- -- -- 1 -- -- 500 VGS=20V -- -- 100 nA VGS =-20V -- -- -100 nA V µA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions VGS=10V,ID=12A Rating Typ. Max. -- 29 36 mΩ 30.5 39 mΩ 1.5 2 V VGS=4.5V,ID=12A VDS = VGS, ID = 250µA Units Min. 1 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS =50V f = 1.0MHz Rating Min. Typ. Max. -- 1.2 -- -- 2359 -- -- 94 -- -- 76 -- Units Ω pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions VGS=10V，R G=6Ω VDD=50V，ID=13A ID =13A VDD =80V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 14 -- -- 6.3 -- -- 76 -- -- 12.5 -- -- 60 -- -- 5.4 -- -- 15.4 -- P ag e 2 of 10 Units 2 0 2 0 V0 1 ns nC CS25N10 A4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage Trr Qrr Test Conditions Rating Units Min. Typ. Max. -- -- 25 A -- -- 100 A IS=12A,VGS=0V -- -- 1.2 V Reverse Recovery Time di/dt=100A/us -- 40 -- ns Reverse Recovery Charge IF=20A -- 68 -- nC TC = 25 °C Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units Rθ JC Junction-to-Case 2.2 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=0.5mH,Id=21.7A,Start TJ=25℃ a3 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ Characteristics Curve： 1000 60 50 ID ,Drain Current,A 10μs 10 100μs 1ms 1 10ms DC Operation in This Area is Limited by RDS(on) 0.1 0.01 PD ,Power Dissipation,W 100 40 30 20 10 SINGLE PULSE TC=25℃ TJ =150℃ 0.1 0 1 10 0 100 25 Figure 1 75 100 125 150 Figure 2. Maximum Power Dissipation vs Case Temperature . Maximum Safe Operating Area 25 30 Vgs=3.0V~10V 25 Note: 1.250us Pulse Test 2.Tc=25℃ 20 20 ID,Drain Current[A] ID ,Drain Current,A 50 TC ,Case Temperature,℃ VDS,Drain-to-Source Voltage,V 15 10 15 Vgs=2.5V 10 5 5 Vgs=2.0V 0 25 50 75 100 125 150 0 0 0.5 TC ,Case Temperature,℃ 1 1.5 2 2.5 3 VDS,Drain-to-Source Voltage[V] Figure 3. Maximum Continuous Drain Current vs Case Temperature Figure 4. Typical output Characteristics 10 ZθJC,Thermal Response[℃/W] D=1 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 T , Rectangular Pulse Duration [sec] Figure 5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ 100 100 10 Is,Source Current[A] ID ,Drain Current[A] Note: 1.VDS=5V 2.250us Pulse Test Tj=150℃ 1 Tj=25℃ 10 Tj=150℃ Tj=25℃ 1 0.1 0.1 0 0.01 1 1.5 2 2.5 0.2 0.8 1 1.2 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics 2.5 PULSED TEST ID = 12A PULSED TEST Tj = 25℃ 33.0 RDS(on),(Normalized) Drain-to-Source On Resistance RDS(on), Drain-to-Source On Resistance,mΩ 0.6 V SD ，Source-to-Drain Voltage[V] VGS,Gate-to-Source Voltage[V] 34.0 0.4 3 32.0 VGS = 4.5V 31.0 30.0 VGS = 10V 29.0 2 VGS=10V VGS=4.5V 1.5 1 0.5 28.0 0 27.0 0.00 5.00 10.00 15.00 20.00 -50 25.00 50 100 150 Figure 9. Normalized On Resistance vs Junction Temperature Figure 8. Drain-to-Source On Resistance vs Drain Current 1.3 1.15 VGS = VDS ID = 250μA BVDSS,(Normalized) Drain-to-Source Breakdown Voltage 1.2 1.1 VGS(th),(Normalized) Threshold Voltage 0 TJ,Junction Temperature(℃) I D ,Drain Current,A 1 0.9 0.8 0.7 0.6 1.1 1.05 1 0.95 0.9 0.5 0.85 0.4 -50 0 50 100 150 TJ,Junction Temperature(℃) Figure10. Normalized Threshold Voltage vs Junction Temperature -50 0 50 100 150 TJ,Junction Temperature(℃) Figure 11. Normalized Breakdown Voltage vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 2 0 V0 1 CS25N10 A4 10000 Vgs,Gate-to-Source Voltage[V] 10 Ciss 1000 Capacitance,pF R ○ Coss 100 Crss f = 1MHz Ciss = Cgs +Cgd Coss = Cds +Cgd Crss = Cgd 10 0 10 8 6 4 VDS=80V ID =13A 2 0 20 30 40 50 VDS,Drain-to-Source Voltage,V Figure 12. Capacitance Characteristics 0 10 20 30 40 50 60 70 Qg,Gate Charge[nC] Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 2 0 V0 1 CS25N10 A4 Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ Package Information ： Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.16 B 5.70 6.30 C 2.10 2.50 D 0.30 0.70 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.40 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 2 0 V0 1 CS25N10 A4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 2 0 V0 1