CS2837AND

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS2837 AND General Description： VDSS 500 V CS2837 AND, the silicon N-channel Enhanced VDMOSFETs, is ID 20 A obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 230 W conduction loss, improve switching performance and enhance RDS(ON)Typ 0.18 Ω the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 Rating Units 500 V 20 A 13 A 80 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 1500 mJ Avalanche Energy ,Repetitive 250 mJ Avalanche Current 7.1 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 230 W Derating Factor above 25°C 1.84 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 6000 V TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ Pulsed Drain Current IDM VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS2837 AND R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current V DS = 500V, VGS = 0V, T a = 25℃ V DS =400V, V GS = 0V, IDSS Rating Test Conditions Units Min. Typ. Max. 500 -- -- V -- 0.6 -- V/℃ -- -- 1 T a = 125℃ -- -- 10 µA IGSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- -10 µA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =10A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 0.18 0.26 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rating Test Conditions V DS =15V, I D =10A V GS = 0V V DS = 25V f = 1.0MHz Min. Typ. Max. -- 18 -- -- 4900 -- -- 410 -- -- 44 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =20A V DD =250V V GS = 10V RG =25Ω I D =20A V DD =250V V GS = 10V Min. Typ. Max. -- 53 -- -- 117 -- -- 307 -- -- 138 -- -- 96 -- 18 -- -- 41 -- W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2012 Huajing Discrete Devices R CS2837 AND ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 20 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage I S =20A,VGS =0V -- -- 1.5 V trr Reverse Recovery Time I S =20A,Tj = 25°C -- 558 ns Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 6.1 µC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter Rθ JC Junction-to-Case Rθ JA Junction-to-Ambient Typ. Units 0.54 ℃/W 40 ℃/W Gate-source Zener diode Symbol Parameter VGSO Gate-source breakdown voltage Rating Test Conditions Min. I GS = ±1mA(Open Drain) Typ. Max. 30 Units V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=17.3A, Start TJ=25℃ a3 ：ISD =20A,di/dt ≤100A/us,VDD ≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ Package Information： Items Values(mm) MIN MAX A 15.10 15.90 B 19.30 20.50 C 4.70 4.90 D 1.40 1.60 E 0.90 1.10 F 0.50 0.70 G1 2.00 2.20 G2 3.00 3.20 H 3.00 3.60 I 1.20 1.60 L 19.00 21.00 N 5.25 5.65 3.10 3.30 TO-3P(N) Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2012 Huajing Discrete Devices R CS2837 AND ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd ≤0.1% ≤0.01% Cr(VI) ≤0.1% PBB PBDE ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2012