Silicon
N-Channel
Power MOSFET
R
○
CS2N60 A4H
General Description:
600
V
ID
2
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching performance
RDS(ON)Typ
3.6
Ω
CS2N60
A4H,
the
VDSS
silicon
N-channel
Enhanced
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords with
the RoHS standard..
Features:
l Fast Switching
l Low ON Resistance(Rdson≤4.5Ω)
l Low Gate Charge
(Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:5.4pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
ID
IDM
a1
VGS
a2
EAS
EAR
IAR
a1
a1
dv/dt
a3
Rating
Units
Drain-to-Source Voltage
600
V
Continuous Drain Current
2.0
A
Continuous Drain Current T C = 100 °C
1.45
A
Pulsed Drain Current
8.0
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
80
mJ
Avalanche Energy ,Repetitive
6.4
mJ
Avalanche Current
1.1
A
5
V/ns
35
W
0.28
W/℃
150,–55 to 150
℃
300
℃
Peak Diode Recovery dv/dt
Power Dissipation
PD
Derating Factor above 25°C
TJ,T stg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 1 of 1 0
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CS2N60 A4H
R
○
Electrical Characteristics(Tc= 25 ℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID =250µA
ΔBVDSS/ΔT J
Bvdss Temperature Coefficient
IDSS
Drain to Source Leakage Current
IGSS(F)
IGSS(R)
Rating
Units
Min.
Typ.
Max.
600
--
--
ID=250uA,Reference25℃
--
0.6
--
VDS = 600V, V GS= 0V,
Ta = 25℃
VDS =480V, V GS= 0V,
Ta = 125℃
--
--
1
Gate to Source Forward Leakage
VGS= 30V
--
--
100
nA
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
V
V/℃
µA
100
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =1.0A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250µA
Rating
Units
Min.
Typ.
Max.
--
3.6
4.5
Ω
4.0
V
2.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Trans conductance
VDS=15V, ID =1.0A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
1.8
--
--
280
--
31
--
5.4
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =2.0A VDD = 300V
VGS = 10V RG =9.1Ω
ID =2.0A V DD =300V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
7
--
--
5
--
--
26
--
--
10.5
--
--
8.5
--
1.5
--
4.0
Pag e 2 of 1 0
Units
ns
nC
2 0 1 5 V0 1
CS2N60 A4H
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Test Conditions
Rating
Units
Min.
Typ.
Max.
Continuous Source Current (Body Diode)
--
--
2
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
8
A
VSD
Diode Forward Voltage
IS =2.0A,VGS =0V
--
--
1.5
V
trr
Reverse Recovery Time
IS =2.0A,Tj = 25°C
--
407
--
ns
Reverse Recovery Charge
dIF /dt=100A/us,
VGS=0V
--
1152
--
nC
Qrr
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
Typ.
Units
R θJC
Junction-to-Case
3.57
℃/W
R θJA
Junction-to-Ambient
62
℃/W
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=10.0mH, ID=4A, Start TJ=25℃
a3
:ISD =2A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 3 of 1 0
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CS2N60 A4H
R
○
Characteristics Curve:
40
100μs
1
1 ms
10ms
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
0.1
DC
PD , Power Dissipation ,Watts
Id , Drain Current , Amps
10
20
10
0
0.01
1
10
100
Vds , Drain-to-Source Voltage , Volts
0
1000
Figure 1 Maximum Forward Bias Safe Operating Area
25
50
75
100
TC , Case Temperature , C
125
150
Figure 2 Maximum Power Dissipation vs Case Temperature
4
Id , Drain Current , Amps
2.5
Id , Drain Current , Amps
30
2.0
1.5
1.0
VGS=15V
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
3
VGS=7V
2
VGS=6.5V
VGS=6V
1
VGS=5.5V
VGS=4.5V
0.5
0
0
0
25
75
100
50
TC , Case Temperature , C
125
150
Figure 3 Maximum Continuous Drain Current vs Case Temperature
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 4 Typical Output Characteristics
Thermal Impedance, Normalized
1
50%
20%
0.1
10%
5%
PDM
2%
0.01
Single pulse
0.001
0.00001
t1
t2
1%
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS2N60 A4H
R
○
Idm , Peak Current , Amps
100
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
150 − TC
I = I 25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t ,Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
8
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
VDS=30V
5
Rds(on), Drain to Source ON
Id , Drain Current , Amps
6
4
3
2
+150℃
+25℃
1
ID=2A
6
ID=1A
ID=0.5A
ID=0.25A
4
-55℃
2
0
2
3
4
5
Vgs , Gate to Source Voltage , Volts
4
6
6
8
10
12
Vgs , Gate to Source Voltage , Volts
14
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Figure 7 Typical Transfer Characteristics
Rds(on), Drain to Source ON Resistance,
Nomalized
8
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
7
6
VGS=20V
5
2.5
2.25
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
2
1.75
1.5
1.25
1
0.75
0.5
4
0
1
2
3
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
-50
0
50
100
Tj, Junction temperature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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150
CS2N60 A4H
1.1
1.1
Bvdss,Drain to Source
Breakdown Voltage, Normalized
Vgs(th),Threshold Voltage, Nomalized
1.15
1.05
1
0.95
0.9
0.85
0.8
0.75
VGS=0V
ID=250μA
0.7
0.65
-75
1.05
1
0.95
-50
-25
-55
0
25 50 75 100 125 150 175
Tj, Junction temperature , C
-30
-5
20
45
70
95
120
Tj, Junction temperature , C
145
170
Figure 12 Typical Breakdown Voltage vs Junction Temperature
10000
Vgs , Gate to Source Voltage ,Volts
12
1000
Capacitance , pF
VGS=0V
ID=250μA
0.9
Figure 11 Typical Theshold Voltage vs Junction Temperature
Ciss
100
Coss
Crss
10
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
1
VDS=180V
10
VDS=360V
VDS=480V
8
6
4
2
ID=2A
0
0.1
1
10
Vds , Drain - Source Voltage , Volts
100
0
Figure 13 Typical Capacitance vs Drain to Source Voltage
8
2
4
6
8
10 12 14
Qg , Total Gate Charge , nC
16
18
20
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
7
Id , Drain Current , Amps
Isd, Reverse Drain Current , Amps
R
○
6
5
4
3
+150℃
2
+25℃
10
STARTING Tj = 25℃
STARTING Tj = 150℃
1
-55℃
1
0
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
Figure 15 Typical Body Diode Transfer Characteristics
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
tav,Time in Avalanche,Seconds
Figure 16 Unclamped Inductive Switching Capability
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS2N60 A4H
R
○
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 7 of 1 0
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CS2N60 A4H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
R
○
Pag e 8 of 1 0
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CS2N60 A4H
R
○
Package Information
Items
Values(mm)
MIN
MAX
A
6.30
6.90
A1
0
0.13
B
5.70
6.30
C
2.10
2.50
D
0.30
0.60
E1
0.60
0.90
E2
0.70
1.00
F
0.30
0.60
G
0.70
1.00
L1
9.60
10.30
L2
2.70
3.10
H
0.60
1.00
M
5.10
5.50
N
2.09
2.49
R
0.3
T
1.40
1.60
Y
5.10
6.30
TO-252 Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
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The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb
≤0.1%
Limit
Hg
Cd
Cr(VI)
PBB
PBDE
≤0.1%
≤0.01%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○
○
○
○
○
○
Molding Compound
○
○
○
○
○
○
Chip
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
Solder
×
○
○
○
○
○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
Note
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part:
Post:214061
UTH
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
E-mail:sales@hj.crmicro.com
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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