CS2N65A4

Silicon N-Channel Power MOSFET R ○ CS2N65 A4 General Description： 650 V ID 2 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 3.9 Ω CS2N65 A4, the silicon VDSS N-channel Enhanced switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified） Symbol Parameter VDSS ID a1 IAR Drain-to-Source Voltage 650 V Continuous Drain Current 2.0 A Continuous Drain Current T C = 100 °C 1.45 A 8 A ±30 V Single Pulse Avalanche Energy 68 mJ Avalanche Energy ,Repetitive 6.4 mJ Avalanche Current 1.1 A 5 V/ns 35 W 0.28 W/℃ 150，–55 to 150 ℃ 300 ℃ Gate-to-Source Voltage a2 EAR Units Pulsed Drain Current IDM VGS EAS Rating a1 a1 dv/dt a3 Peak Diode Recovery dv/dt Power Dissipation PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient IDSS Drain to Source Leakage Current IGSS(F) IGSS(R) Rating Units Min. Typ. Max. 650 -- -- ID=250uA,Reference25℃ -- 0.6 -- VDS = 650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, Ta = 125℃ -- -- 1 Gate to Source Forward Leakage VGS= 30V -- -- 100 nA Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA V V/℃ µA 100 ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =1.0A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 3.9 5.0 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =2A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. 2.6 -- -- 290 -- 31 -- 6 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =2.0A VDD = 325V VGS = 10V RG = 9.1Ω ID =2.0A V DD =325V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 8 -- -- 6 -- -- 30 -- -- 11 -- -- 9 -- 1.5 -- 4 Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS2N65 A4 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 2 A ISM Maximum Pulsed Current (Body Diode) -- -- 8 A VSD Diode Forward Voltage IS =2.0A,VGS =0V -- -- 1.5 V trr Reverse Recovery Time IS =2.0A,Tj = 25°C -- 425 -- ns Reverse Recovery Charge dIF /dt=100A/us, VGS=0V -- 1140 -- nC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units R θJC Junction-to-Case 3.57 ℃/W R θJA Junction-to-Ambient 62 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=3.7A, Start T J =25℃ a3 ：ISD =2A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ Characteristics Curve： 10 Id , Drain Current , Amps 100μs 1 1 ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0.1 DC PD , Power Dissipation ，Watts 40 20 10 0 0.01 1 10 100 Vds , Drain-to-Source Voltage , Volts 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 25 50 75 100 TC , Case Temperature , C 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 4 Id , Drain Current , Amps 2.5 Id , Drain Current , Amps 30 2.0 1.5 1.0 PULSE DURATION=10μs DUTY FACTOR=0.5%MAX Tc = 25℃ 3 VGS=15V VGS=7V 2 VGS=6.5V VGS=6V 1 0.5 VGS=5.5V VGS=4.5V 0 0 0 25 75 100 50 TC , Case Temperature , C 125 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts 25 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 0.1 10% 5% PDM 2% 0.01 Single pulse 0.001 0.00001 t1 t2 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ Idm , Peak Current , Amps 100 FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS: TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION  150 − TC  I = I 25   125   10 1 1.00E-05 1.00E-04 1.00E-03 1.00E-02 t ，Pulse Width , Seconds 1.00E-01 1.00E+00 1.00E+01 Figure 6 Maximum Peak Current Capability 8 PULSE DURATION = 10μs DUTY CYCLE = 0.5%MAX VDS=30V 5 Rds(on), Drain to Source ON Id , Drain Current , Amps 6 4 3 2 +150℃ +25℃ 1 ID=2A 6 ID=1A ID=0.5A ID=0.25A 4 -55℃ 2 0 2 3 4 5 Vgs , Gate to Source Voltage , Volts 4 6 6 8 10 12 Vgs , Gate to Source Voltage , Volts 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Nomalized 8 Rds(on), Drain to Source ON Resistance, Ohms PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 7 6 VGS=20V 5 2.5 2.25 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=1A 2 1.75 1.5 1.25 1 0.75 0.5 4 0 1 2 3 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current 4 -50 0 50 100 Tj, Junction temperature , C Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 of 1 0 2 0 1 5 V0 1 150 CS2N65 A4 1.1 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.15 1.05 1 0.95 0.9 0.85 0.8 0.75 VGS=0V ID=250μA 0.7 1.05 1 0.95 -75 -50 -25 0 25 50 75 100 Tj, Junction temperature , C 125 150 -55 175 Figure 11 Typical Theshold Voltage vs Junction Temperature -30 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 Figure 12 Typical Breakdown Voltage vs Junction Temperature 12 1000 Vgs , Gate to Source Voltage ,Volts 10000 Capacitance , pF VGS=0V ID=250μA 0.9 0.65 Ciss Coss 100 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 10 Crss 1 VDS=180V 10 VDS=360V VDS=480V 8 6 4 2 ID=2A 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 8 2 4 6 8 10 12 14 Qg , Total Gate Charge , nC 16 18 20 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 7 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps R ○ 6 5 4 +150℃ 3 +25℃ 2 10 STARTING Tj = 25℃ STARTING Tj = 150℃ 1 -55℃ 1 0 0 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts Figure 15 Typical Body Diode Transfer Characteristics 1.2 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tav,Time in Avalanche,Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 of 1 0 2 0 1 5 V0 1 CS2N65 A4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ Package Information Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.00 L1 9.60 10.30 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 of 1 0 2 0 1 5 V0 1 CS2N65 A4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1