CS2N65FA9

Silicon N-Channel Power MOSFET R ○ CS2N65F A9 General Description： VDSS 650 V ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 27 W which reduce the conduction loss, improve switching R DS(ON)Typ 3.9 Ω CS2N65F A9, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS EAR IAR Units Drain-to-Source Voltage 650 V Continuous Drain Current 2.0 A Continuous Drain Current T C = 100 °C 1.2 A Pulsed Drain Current 8.0 A ±30 V Single Pulse Avalanche Energy 68 mJ Avalanche Energy ,Repetitive 6.4 mJ Avalanche Current 1.1 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 27 W 0.22 W/℃ 150，–55 to 150 ℃ 300 ℃ Gate-to-Source Voltage a2 EAS Rating a1 a1 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS2N65F A9 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ Drain to Source Leakage Current VDS = 650V, V GS= 0V, Ta = 25℃ VDS =520V, V GS= 0V, IDSS Rating Units Min. Typ. Max. 650 -- -- V -- 0.60 -- V/℃ -- -- 1 Ta = 125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =1.0A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 3.9 4.5 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =2A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 2.6 -- -- 290 -- -- 31 -- -- 6 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =2A VDD = 325V VGS = 10V RG =9.1Ω ID =2A V DD =325V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 8 -- -- 6 -- -- 30 -- -- 11 -- -- 9 -- 1.5 -- 4 Pag e 2 of 1 0 Units ns nC 2 0 1 5 V0 1 CS2N65F A9 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 2.0 A ISM Maximum Pulsed Current (Body Diode) -- -- 8.0 A VSD Diode Forward Voltage IS =2.0A,VGS =0V -- -- 1.5 V trr Reverse Recovery Time IS =2.0A,Tj = 25°C -- 425 ns Reverse Recovery Charge dIF /dt=100A/us, V GS=0V -- 1140 nC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θ JC Junction-to-Case 4.63 ℃/W R θ JA Junction-to-Ambient 100 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=3.7A, Start T J =25℃ a3 ：ISD =2.0A,di/dt ≤100A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS2N65F A9 R ○ Pd , Power Dissipation ,Watts Characteristics Curve： 27 18 9 0 0 25 50 75 100 125 150 Tc , Case Temperature , C W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS2N65F A9 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 5 of 1 0 2 0 1 5 V0 1 CS2N65F A9 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2 0 1 5 V0 1 CS2N65F A9 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS2N65F A9 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS2N65F A9 R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS2N65F A9 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1