CS3205B8

Silicon N-Channel Power MOSFET R ○ CS3205 B8 General Description ： VDSS 55 V ID（ Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar P D(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ CS3205 B8, the silicon N-channel Enhanced switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤8.5mΩ)  Low Gate Charge (Typical Data:74nC)  Low Reverse transfer capacitances(Typical:68pF)  100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID a1 IDM VGS EAS a2 dv/dt a3 PD Rating Units 55 V Continuous Drain Current 120 A Continuous Drain Current TC = 100 °C 84 A Pulsed Drain Current 390 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 1200 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 230 W Derating Factor above 25°C 1.53 W/℃ 150，–55 to 150 ℃ 300 ℃ TJ，Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 7 V0 1 CS3205 B8 R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage ΔBVDSS/ΔTJ IDSS Rating Min. Typ. Max. VGS=0V, ID=250µA 55 -- -- Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.08 -- -- -- 1 Drain to Source Leakage Current VDS = 55V, VGS= 0V, Ta = 25℃ VDS =44V, VGS= 0V, Ta = 125℃ -- -- 10 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=62A VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA Rating Units Min. Typ. Max. -- 7.6 8.5 mΩ 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions gfs Forward Trans conductance VDS=15V, ID =75A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 85 -- -- 4395 -- -- 903 -- -- 68 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =75A VDD = 30V VGS = 10V R G = 4.7Ω ID =75A VDD =30V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 16 -- -- 51 -- -- 75 -- -- 30 -- -- 74 -- 17 -- -- 21 -- Page 2 of 10 Units ns nC 2 0 1 7 V0 1 R ○ CS3205 B8 Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 120 A ISM Maximum Pulsed Current (Body Diode) -- -- 390 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 135 ns Qrr Reverse Recovery Charge -- 412 nC IRRM Reverse Recovery Current -- 6.1 IS=75A,VGS=0V IS=75A,Tj = 25°C dIF/dt=100A/us, VGS=0V -- A Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units RθJC Junction-to-Case 0.65 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, I D=15.5A, Start T J =25℃ a3 ：ISD =75A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 Characteristics Curve： 1000 280 Pd , Power Dissipation ,Watts Id , Drain Current , Amps 10μs 100μs 100 1ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 10 DC 1 240 200 160 120 80 40 0 1 10 Vds , Drain-to-Source Voltage , Volts 100 0 Figure 1 Maximum Forward Bias Safe Operating Area 50 25 150 Figure 2 Maximum Power Dissipation vs Case Temperature 160 150 VGS=15V Id , Drain Current , Amps 140 Id , Drain Current , Amps 75 100 125 Tc , Case Temperature , C 120 90 60 30 120 PULSE DURATION=10μs DUTY FACTOR=0.5%MAX Tc = 25℃ VGS=10V 100 VGS=6V 80 VGS=6.5V 60 VGS=5.5V 40 20 0 0 25 50 75 100 TC , Case Temperature ， C 125 150 Thermal Impedance, Normalized Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 1 2 3 4 5 6 7 Vds , Drain-to-Source Voltage , Volts 8 Figure 4 Typical Output Characteristics 1 50% 20% 0.1 10% 5% PDM 2% 0.01 Single pulse 0.001 1.00E-05 t1 t2 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . 1.00E+00 Page 4 of 10 2 0 1 7 V0 1 1.00E+01 R ○ CS3205 B8 Idm , Peak Current , Amps 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS:  150  TC  I  I 25   125   100 VGS=10V 10 1.00E-05 1.00E-04 120 1.00E-02 1.00E-01 t Pulse Width , Seconds Figure 6 Maximum Peak Current Capability 0.011 Rds(on), Drain to Souce ON PULSE DURATION = 10μs DUTY CYCLE = 0.5%MAX VDS=30V 100 Id , Drain Current，Amps 1.00E-03 80 60 40 +150℃ +25℃ 20 1.00E+01 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 0.010 ID=120A 0.009 ID=60A ID=30A 0.008 ID=15A 0.007 0.006 -55℃ 0.005 0 2 4 6 8 Vgs , Gate to Source Voltage,Volts Figure 7 Typical Transfer Characteristics 0 10 4 8 10 12 14 Vgs , Gate to Source Voltage ,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 6 2.75 0.011 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 0.010 2.5 VGS=10V 0.009 VGS=20V 0.008 0.007 0.006 0 25 50 75 100 125 150 175 200 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Souce ON Resistance . Ohms 1.00E+00 2.25 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=60A 2 1.75 1.5 1.25 1 0.75 0.5 0.25 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 1.15 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.2 1.1 1 0.9 0.8 0.7 0.6 VGS=0V ID=250μA 0.5 1.1 1.05 1 0.95 0.4 0.9 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature 10000 Vgs , Gate to Source Voltage ,Volts 12 Ciss Capacitance , pF VGS=0V ID=250μA 1000 Coss 100 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Crss VDS=15V 10 VDS=30V VDS=45V 8 6 4 2 ID=75A 10 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 50 75 Qg , Total Gate Charge , nC 100 Figure 14 Typical Gate Charge vs Gate to Source Voltage 1000 175 150 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps 200 25 +150℃ 125 +25℃ 100 +150℃ 75 +25℃ 50 VGS=0V 25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Vsd , Source - Drain Voltage , Volts 1.6 1.8 Figure 15 Typical Body Diode Transfer Characteristics STARTING Tj = 25℃ 100 STARTING Tj = 150℃ 10 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 tav , Time in Avalanche , Seconds 1.00E-01 Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 Package Information Items Values(mm) MIN MAX A 9.60 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L* 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 3.50 3.90 *adjustable TO-220AB Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 7 V0 1 R ○ CS3205 B8 The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Compound Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 7 V0 1