Silicon
N-Channel
Power MOSFET
R
○
CS3N150 AHR
General Description:
1500
V
ID
3
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (T C=25℃)
32
W
which reduce the conduction loss, improve switching
R DS(ON)Typ
5.0
Ω
CS3N150 AHR, the silicon N-channel Enhanced
VDSS
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(H), which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤6.5Ω)
l Low Gate Charge
(Typical Data: 37.6nC)
l Low Reverse transfer capacitances(Typical:2.8pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(TJ= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID
IDM
a1
a2
dv/dt
Units
1500
V
Continuous Drain Current T C = 25 °C
3
A
Continuous Drain Current T C = 100 °C
1.8
A
12
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
227
mJ
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation T C = 25 °C
32
W
0.26
W/℃
150,–55 to 150
℃
300
℃
Pulsed Drain Current T C = 25 °C
VGS
EAS
Rating
a3
PD
Derating Factor above 25°C
TJ,T stg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
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CS3N150 AHR
R
○
Electrical Characteristics(T J= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
V GS=0V, ID =250µA
ΔBVDSS/ΔT J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
IDSS
Drain to Source Leakage Current
V DS =1500V, V GS= 0V,
T J = 25℃
V DS =1200V, V GS= 0V,
T J = 125℃
IGSS(F)
Gate to Source Forward Leakage
IGSS(R)
Gate to Source Reverse Leakage
Rating
Unit
s
Min.
Typ.
Max.
1500
--
--
V
--
1.5
--
V/℃
--
--
25
µA
--
--
500
µA
V GS =+30V
--
--
100
nA
V GS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =1.5A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250µA
Rating
Units
Min.
Typ.
Max.
--
5.0
6.5
Ω
3.0
--
5.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Trans conductance
Rg
Gate resistance
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
Rating
Units
Min.
Typ.
Max.
VDS=30V, ID =1.5A
--
4.5
--
S
f = 1.0MHz
--
4.0
--
Ω
--
2036
--
--
98
--
--
2.8
--
VGS = 0V V DS = 25V
f = 1.0MHz
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =3A VDD = 750V
RG =10Ω
ID =3A VDD =750V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
35.8
--
--
19.4
--
--
56
--
--
31.2
--
--
37.6
--
--
9.9
--
--
14.4
--
Pag e 2 of 1 0
Units
2 0 1 9 V0 1
ns
nC
CS3N150 AHR
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Maximum Pulsed Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Test
Conditions
TC = 25 °C
IS=3.0A,VGS =0V
Rating
Units
Min.
Typ.
Max.
--
--
3
A
--
--
12
A
--
--
1.5
V
--
882
--
ns
--
6.5
--
µC
--
14.7
--
A
IS=3.0A,Tj = 25℃
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
dIF/dt=100A/us,
VGS =0V
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
Max.
Units
R θ JC
Junction-to-Case
3.8
℃/W
R θ JA
Junction-to-Ambient
40
℃/W
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=10mH, ID=6.7A, Start TJ=25℃
a3
:ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N150 AHR
R
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Characteristics Curve:
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 2 Maximum Power dissipation vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N150 AHR
R
○
Figure 6 Typical Transfer Characteristics
Figure 7 Typical Body Diode Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
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CS3N150 AHR
Figure 10 Typical Theshold Voltage vs Junction Temperature
Figure 12 Typical Capacitance vs Drain to Source Voltage
R
○
Figure 11 Typical Breakdown Voltage vs Junction Temperature
Figure 13 Typical Gate Charge vs Gate to Source Voltage
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N150 AHR
R
○
Test Circuit and Waveform:
Figure 14. Gate Charge Test Circuit
Figure 16. Resistive Switching Test Circuit
Figure 15. Gate Charge Waveforms
Figure 17. Resistive Switching Waveforms
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N150 AHR
Figure 18. Diode Reverse Recovery Test Circuit
Figure20.Unclamped Inductive Switching Test Circuit
R
○
Figure 19. Diode Reverse Recovery Waveform
Figure21.Unclamped Inductive Switching Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N150 AHR
R
○
Package Information:
Items
Values(mm)
MIN
MAX
A
5.25
5.85
A1
2.7
3.3
A2
1.8
2.4
A3
1.0
1.6
b
0.45
1.05
b1
1.7
2.3
b2
1.7
2.3
c
0.6
1.2
e
5.15
5.75
E
15.2
15.8
E1
9.7
10.3
E2
3.7
4.3
H
24.2
24.8
H1
8.9
9.5
H2
15.0
15.6
H3
17.9
19.1
H4
1.7
2.3
H5
4.7
5.3
G
4.2
4.8
ΦP
3.3
3.9
TO-3P(H) Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
○
The name and content of poisonous and harmful material in products
Hazardous Substance
Pb
Hg
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○
○
○
○
○
○
○
○
○
○
Molding
○
○
○
○
○
○
○
○
○
○
Chip
○
○
○
○
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
○
○
○
○
Solder
×
○
○
○
○
○
○
○
○
○
Limit
Cd
≤
0.01%
○:Means the hazardous material is under the criterion of 2011/65/EU.
Note
×:Means the hazardous material exceeds the criterion of 2011/65/EU.
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part:
Post:214061
UTH
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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