CS3N150AKR

Silicon N-Channel Power MOSFET R ○ CS3N150 AKR General Description： CS3N150 AKR, the silicon N-channel Enhanced VDSS 1500 V 3 A ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 230 W which reduce the conduction loss, improve switching RDS(ON)Typ 5.0 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 37.6nC) l Low Reverse transfer capacitances(Typical:2.8 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDM a1 a2 dv/dt Units 1500 V Continuous Drain Current T C = 25 °C 3 A Continuous Drain Current T C = 100 °C 1.8 A 12 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 227 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation T C = 25 °C 230 W Derating Factor above 25°C 1.85 W/℃ 150，–55 to 150 ℃ 300 ℃ Pulsed Drain Current T C = 25 °C VGS EAS Rating a3 PD TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ Electrical Characteristics（T J= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =1500V, V GS= 0V, TJ = 25℃ VDS =1200V, V GS= 0V, TJ = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 1500 -- -- V -- 1.5 -- V/℃ -- -- 25 µA -- -- 500 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =1.5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 5.0 6.5 Ω 3.0 -- 5.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance Rg Gate resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Units Min. Typ. Max. VDS=30V, ID =1.5A -- 4.5 -- S f = 1.0MHz -- 4.0 -- Ω -- 2036 -- -- 98 -- -- 2.8 -- VGS = 0V V DS = 25V f = 1.0MHz pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =3A VDD = 750V RG =10Ω ID =3A VDD =750V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 35.8 -- -- 19.4 -- -- 56 -- -- 31.2 -- -- 37.6 -- -- 9.9 -- -- 14.4 -- Pag e 2 of 7 2019V01 Units ns nC CS3N150 AKR R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Test Conditions TC = 25 °C IS=3.0A,VGS =0V Rating Units Min. Typ. Max. -- -- 3 A -- -- 12 A -- -- 1.5 V -- 882 -- ns -- 6.5 -- µC -- 14.7 -- A IS=3.0A,Tj = 25℃ Qrr Reverse Recovery Charge IRRM Reverse Recovery Current dIF/dt=100A/us, VGS =0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 0.54 ℃/W R θ JA Junction-to-Ambient 40 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature a2 ：L=10mH, ID=6.7A, Start TJ=25℃ a3 ：ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃ W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ Characteristics Curve： Figure 1 Maximum Forward Bias Safe Operating Area Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 2 Maximum Power dissipation vs Case Temperature Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Drain Current Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 9 V0 1 CS3N150 AKR Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Capacitance vs Drain to Source Voltage R ○ Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ Test Circuit and Waveform： Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 9 V0 1 CS3N150 AKR Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 8 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ Package Information 项 目 规范(mm) MIN MAX A 4.6 5.2 A1 2,2 2.6 B 0.9 1.4 B1 1.75 2.35 B2 1.75 2.15 B3 2.8 3.35 B4 2.8 3.15 C 0.5 0.7 D 20.60 21.30 D1 16 18 E 15.5 16.10 E1 13 14.7 E2 3.80 5.3 E3 0.8 2.60 e 5.2 5.7 L 19 20.5 L1 3.9 4.6 ΦP 3.3 3.70 Q 5.2 6.00 S 5.8 6.6 TO-247 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 9 V0 1 CS3N150 AKR R ○ The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 9 V0 1