Silicon N-Channel
Power MOSFET
R
○
CS3N90 A3H1-G
General Description :
900
V
ID
3
A
VDMOSFETs, is obtained by the self-aligned planar Technology
P D(TC=25℃)
75
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
5
Ω
CS3N90 A3H1-G, the silicon N-channel Enhanced
VDSS
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤5.5Ω)
Low Gate Charge
(Typical Data:16nC)
Low Reverse transfer capacitances(Typical:6.5pF)
100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
Drain-to-Source Voltage
Rating
Units
900
V
3
A
1.9
A
12
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
125
mJ
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation
75
W
Derating Factor above 25°C
0.6
W/℃
150,–55 to 150
℃
300
℃
Continuous Drain Current
ID
Continuous Drain Current TC = 100 °C
a1
Pulsed Drain Current
IDM
VGS
EAS
a2
dv/dt
a3
PD
TJ,Tstg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
Drain to Source Leakage Current
IDSS
Rating
Min.
Typ.
Max.
900
--
--
ID=250uA,Reference25℃
--
0.61
--
VDS = 900V, VGS= 0V,
Ta = 25℃
VDS =720V, VGS= 0V,
--
--
25
Ta = 125℃
--
--
250
Units
V
V/℃
µA
IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1.5A
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
Rating
Units
Min.
Typ.
Max.
--
5
5.5
Ω
4.0
V
2.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
gfs
Forward Trans conductance
VDS=15V, ID =3A
Rg
Gate resistance
f = 1.0MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
--
5
--
Units
S
Ω
3.1
--
630
--
--
44
--
--
6.5
--
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =3A
VDD = 450V
VGS = 10V R G =25Ω
ID =3A VDD =450V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
13
--
--
32
--
--
25
--
--
40
--
--
16
--
4
--
--
7
--
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nC
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CS3N90 A3H1-G
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Test Conditions
Rating
Units
Min.
Typ.
Max.
Continuous Source Current (Body Diode)
--
--
3
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
12
A
VSD
Diode Forward Voltage
IS=3A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=3A,Tj = 25°C
--
820
ns
Reverse Recovery Charge
dIF/dt=100A/us,
VGS=0V
--
2.7
µC
Qrr
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
Max.
RθJC
Junction-to-Case
1.67
℃/W
RθJA
Junction-to-Ambient
62.5
℃/W
Units
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=10.0mH, I D=4.9A, Start T J =25℃
a3
:ISD =3A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
Characteristics Curve:
PD , Power Dissipation ,Watts
80
70
60
50
40
30
20
10
0
0
25
50
75
100
TC , Case Temperature , C
125
150
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
Package Information
Values(mm)
Items
MIN
MAX
A
6.30
6.90
B
5.70
6.40
B1
0.70
1.30
B2
6.90
7.30
C
2.10
2.50
C1
0.20
0.40
C2
0.30
0.50
D
0.30
0.60
E
0.50
0.70
F
0.30
0.60
G
0.70
1.00
H
1.60
2.40
H1
0.25
0.45
L*
7.50
9.80
M
5.10
5.50
N
2.09
2.49
*:adjustable
TO-251 (251L-1) Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3N90 A3H1-G
The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
≤
≤
≤
0.1%
0.1%
0.01%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
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Molding
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Compound
Chip
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Wire Bonding
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Solder
×
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Limit
○:Means the hazardous material is under the criterion of 2011/65/EU.
Note
×:Means the hazardous material exceeds the criterion of 2011/65/EU.
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part:
Post:214061
UTH
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
E-mail:sales@hj.crmicro.com
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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