CS460FA9H

Silicon N-Channel Power MOSFET R ○ CS460F A9H General Description： VDSS 500 V ID 20 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 85 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 Ω CS460F A9H, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM Units Drain-to-Source Voltage 500 V Continuous Drain Current 20 A 12.5 A 80 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 1500 mJ Avalanche Energy ,Repetitive 90 mJ Avalanche Current 4.3 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 85 W 0.68 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS a2 EAS EAR IAR Rating a1 a1 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Rating Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS = 500V, V GS= 0V, Ta = 25℃ VDS =400V, V GS= 0V, Ta = 125℃ IGSS(F) Gate to Source Forward Leakage VDS =0V, VGS= 30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VDS =0V, VGS= -30V -- -- -100 nA Units Min. Typ. Max. 500 -- -- V -- 0.55 -- V/℃ -- -- 1 µA 100 ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =10A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.25 0.3 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =10A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. 17 -- -- 2863 -- 285 -- 25 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Test Conditions Rating Min. Typ. Turn-on Delay Time -- 33 tr Rise Time -- 75 td(OFF) Turn-Off Delay Time -- 181 tf Fall Time -- 83 Qg Total Gate Charge -- 63 -- 14 -- 24 Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge ID =20A VDD = 250V RG = 25Ω ID =20A V DD =250V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 2 of 1 0 Max. Units ns nC 2 0 1 5 V0 1 CS460F A9H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 20 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage IS =20A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time IS =20A,Tj = 25°C -- 392 -- ns Reverse Recovery Charge dIF /dt=100A/us, VGS=0V -- 3.4 -- µC Qrr Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 1.47 ℃/W R θ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=17.3A, Start T J =25℃ a3 ：ISD =20A,di/dt ≤300A/us,V DD≤BV DS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ Characteristics Curve： Id , Drain Current , Amps 100μs 10 ms 10 Pd , Power Dissipation ,Watts 100 10μs 1 ms DC OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 1 0.1 1 10 100 Vds , Drain-to-Source Voltage , Volts 60 30 0 25 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 25 70 PULSE DURATION=250μs DUTY FACTOR=0.5%MAX Tc = 25℃ 60 20 Id , Drain Current , Amps Id , Drain Current , Amps 90 15 10 5 VGS=15V VGS=8V 50 40 VGS=5.5 V VGS=5V 30 20 VGS=4.5 V 10 0 0 25 50 75 100 TC , Case Temperature ，C 125 150 0 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 20 30 40 Vds , Drain-to-Source Voltage , Volts 50 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 0.1 10% 5% PDM 2% 0.01 1% Single pulse 0.001 0.00001 0.0001 t1 t2 NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 10 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ Idm , Peak Current , Amps 1000 FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS: TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION  150 − TC  I = I 25   125   100 10 1.00E-05 1.00E-04 1.00E-03 1.00E-02 t ，Pulse Width , Seconds 1.00E-01 1.00E+00 1.00E+01 Figure 6 Maximum Peak Current Capability 1.4 Rds(on), Drain to Source ON Resistance , Ohms Id , Drain Current , Amps 100 PULSE DURATION = 250μs DUTY CYCLE = 0.5%MAX VDS=50V 10 1 +150℃ +25℃ PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 1.2 1 ID=20A 0.8 ID=10A 0.6 ID=5A 0.4 0.2 -55℃ 0 0.1 2 3 4 5 6 7 8 Vgs , Gate to Source Voltage , Volts 9 10 Figure 7 Typical Transfer Characteristics PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ VGS=10V ID=10A 0.6 VGS=10V 0.4 VGS=20V 0.2 6 8 10 12 14 Vgs , Gate to Source Voltage ，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 Rds(on), Drain to Source ON Resistance, Nomalized Rds(on), Drain to Source ON 0.8 4 2.5 2 1.5 1 0.5 0 0 20 40 60 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current 80 0 -100 -50 0 50 100 Tj, Junction temperature , C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 1 5 V0 1 200 CS460F A9H 1.2 Vgs(th),Threshold Voltage, Nomalized 1.15 Bvdss,Drain to Source Breakdown Voltage, Normalized 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 VGS=0V ID=250μA 0.7 0.65 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C 1.1 1 0.9 0 50 100 Tj, Junction temperature , C 150 200 Vgs , Gate to Source Voltage ,Volts 12 8000 Capacitance , pF -50 Figure 12 Typical Breakdown Voltage vs Junction Temperature 10000 6000 Ciss 4000 Coss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd VDS=100V 10 VDS=250V VDS=400V 8 6 4 ID=20A 2 Crss 0 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 0 100 Figure 13 Typical Capacitance vs Drain to Source Voltage 100 30 60 90 Qg , Total Gate Charge , nC 120 150 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps VGS=0V ID=250μA 0.8 -100 Figure 11 Typical Theshold Voltage vs Junction Temperature 2000 R ○ 10 1 +150℃ If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit STARTING Tj = 25℃ 10 STARTING Tj = 150℃ 1 +25℃ 0.1 0.2 0.4 0.6 0.8 1 1.2 Vsd , Source - Drain Voltage , Volts 1.4 1.6 Figure 15 Typical Body Diode Transfer Characteristics 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tav,Time in Avalanche,Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 1 5 V0 1 CS460F A9H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ Package Information Items Values(mm) MIN MAX A 9.60 10.40 B 15.40 16.20 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 2.00 2.40 12.00 14.00 6.30 7.70 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 H L TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 1 5 V0 1 CS460F A9H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1