CS4N60A3HD

Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS4N60 A3HD General Description： 600 V ID 4 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 W which reduce the conduction loss, improve switching RDS(ON)Typ 1.8 Ω CS4N60 A3HD, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 600 V 4 A 3.2 A 16 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 200 mJ Avalanche Energy ,Repetitive 30 mJ Avalanche Current 2.5 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 75 W Derating Factor above 25°C 0.60 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 3000 V TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 Pulsed Drain Current IDM VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2012 Huajing Discrete Devices CS4N60 A3HD R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter VDSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current V DS =600V, V GS = 0V, T a = 25℃ V DS =480V, V GS = 0V, T a = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Test Conditions Unit s Min. Typ. Max. 600 -- -- V -- 0.67 -- V/℃ -- -- 1 µA -- -- 100 µA V GS =+20V -- -- 10 µA V GS =-20V -- -- -10 µA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance V GS =10V,I D =2A VGS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Test Conditions Units Min. Typ. Max. -- 1.8 2.3 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Rating Test Conditions Min. Coss Output Capacitance Crss Reverse Transfer Capacitance V DS =15V, I D =2A V GS = 0V V DS = 25V f = 1.0MHz Typ. Max. 3.5 -- -- 544 -- 55 -- 8.5 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rating Test Conditions I D =4A V DD = 300V R G =4.7Ω I D =4A V DD =300V V GS = 10V Min. Typ. Max. -- 8.5 -- -- 6.5 -- -- 31 -- -- 8.5 -- -- 14.5 -- 2.8 -- 6.3 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2012 Huajing Discrete Devices CS4N60 A3HD R ○ Source-Drain Diode Characteristics Symbol Parameter IS Rating Test Conditions Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 4 A ISM Maximum Pulsed Current (Body Diode) -- -- 16 A VSD Diode Forward Voltage I S =4.0A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time I S =4.0A,T j = 25°C -- 430 -- ns Reverse Recovery Charge dI F/dt=100A/us, V GS =0V -- 1270 -- nC Qrr Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Units Rθ JC Junction-to-Case 1.67 ℃/W Rθ JA Junction-to-Ambient 62.5 ℃/W Gate-source Zener diode Symbol Parameter VGSO Gate-source breakdown voltage Rating Test Conditions Min. I GS = ±1mA(Open Drain) Typ. Max. Units 30 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=6.3A, Start TJ=25℃ a3 ：ISD =4A,di/dt ≤100A/us,VDD ≤BVDS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD Characteristics Curve： 80 10 PD , Power Dissipation ，Watts Id , Drain Current , Amps 100 10μs 100μs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 100ms DC 70 60 50 40 30 20 10 0 .0 1 1 10 100 V d s , D r a in - to - S o u rc e V o lta g e , V o lts 0 1000 0 Figure 1 Maximun Forward Bias Safe Operating Area 50 75 100 TC , Case Temperature , C 6 Id , Drain Current , Amps 5 4 3 2 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 6 Id , Drain Current , Amps 25 PULSE DURATION=10μs DUTY FACTOR=0.5%MAX Tc = 25℃ VGS=15V 4.5 VGS=7V 3 VGS=6V VGS=6.5V 1.5 VGS=5.5V VGS=4.5V 1 0 0 0 25 75 100 125 50 TC , Case Tem perature , C 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts 25 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 0.1 10% 5% PDM 2% 0.01 Single pulse 0.001 0.00001 t1 t2 1% NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds 0.1 1 Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD 100 FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS: Idm , Peak Current , Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION  150 − TC  I = I 25   125   10 1 1.00E-05 1.00E-04 1.00E-03 7.5 Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10μs DUTY CYCLE = 0.5%MAX VDS=30V 6 4.5 3 -55℃ +25℃ 1.5 +150℃ 0 1.00E+00 1.00E+01 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 5 4 ID= 4A ID= 2A 3 ID= 1A 2 1 0 2 3 4 5 Vgs , Gate to Source Voltage , Volts 6 Figure 7 Typical Transfer Characteristics PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 2.5 VGS=20V 2 4 6 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Rds(on), Drain to Source ON Resistance, Nomalized 3 Rds(on), Drain to Source ON Resistance, Ohms 1.00E-01 Figure 6 Maximun Peak Current Capability 6 9 Id , Drain Current , Amps 1.00E-02 t ，Pulse Width , Seconds 1.5 2.5 2.25 2 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=2A 1.75 1.5 1.25 1 0.75 0.5 1 0 1 2 3 Id , Drain Current , Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current 4 -50 0 50 100 Tj, Junction temperature , C Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 5 of 10 2012 150 Huajing Discrete Devices 1.05 1 0.95 0.9 0.85 0.8 0.75 VGS=0V ID=250μA 0.7 0.65 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 11 Typical Theshold Voltage vs Junction Temperature 1.05 1 0.95 -30 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 Figure 12 Typical Breakdown Voltage vs Junction Temperature Vgs , Gate to Source Voltage ,Volts 12 1000 Capacitance , pF VGS=0V ID=250μA 0.9 -55 10000 Ciss 100 Coss Crss 10 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 1 VDS=180V 10 VDS=360V VDS=480V 8 6 4 2 ID=2A 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 8 2 4 6 8 10 12 14 Qg , Total Gate Charge , nC 16 18 20 Figure 14 Typical Gate Charge vs Gate to Source Voltage 100 7 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps CS4N60 A3HD 1.1 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.15 R ○ 6 5 4 3 +150℃ 2 +25℃ 0 0 0.2 10 STARTING Tj = 150℃ 1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit -55℃ 1 STARTING Tj = 25℃ 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 1.2 Figure 15 Typical Body Diode Transfer Characteristics 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tav,Time in Avalanche,Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD Package Information： Items Values(mm) MIN MAX A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 C1 0.85 1.25 D 0.40 0.60 E 0.50 0.70 F 0.40 0.60 G 0.70 0.90 H 1.60 2.40 L 7.70 9.80 M 5.10 5.50 N 2.09 2.49 TO-251 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2012 Huajing Discrete Devices R ○ CS4N60 A3HD The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb ≤0.1% Limit Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2012