CS4N60FA9R

Silicon N-Channel Power MOSFET R ○ CS4N60F A9R General Description： 600 V ID 4 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.1 Ω CS4N60F A9R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDM a1 a2 dv/dt Units 600 V Continuous Drain Current T C = 25 °C 4 A Continuous Drain Current T C = 100 °C 2.5 A 16 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 250 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation T C = 25 °C 30 W 0.24 W/℃ 150，–55 to 150 ℃ 300 ℃ Pulsed Drain Current T C = 25 °C VGS EAS Rating a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2018V01 CS4N60F A9R R ○ Electrical Characteristics（T J= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =600V, V GS= 0V, TJ = 25℃ VDS =480V, V GS= 0V, TJ = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 600 -- -- V -- 0.67 -- V/℃ -- -- 1 µA -- -- 100 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =2A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 2.1 2.5 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance Rg Gate resistance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Rating Units Min. Typ. Max. VDS=15V, ID =2A -- 3.5 -- S f = 1.0MHz -- 3.3 -- Ω -- 590 -- -- 55 -- -- 4 -- VGS = 0V V DS = 25V f = 1.0MHz pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =4A VDD = 300V RG =10Ω ID =4A V DD =480V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 14 -- -- 15 -- -- 34 -- -- 13 -- -- 14.5 -- -- 2.6 -- -- 6.5 -- P a g e 2 of 1 0 Units ns nC 2 0 1 8 V0 1 CS4N60F A9R R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 4 A ISM Maximum Pulsed Current (Body Diode) -- -- 16 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 250 -- ns Qrr Reverse Recovery Charge -- 1000 -- nC IRRM Reverse Recovery Current -- 8.03 -- A IS =4.0A,VGS =0V IS =4.0A,Tj = 25℃ dIF /dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 4.17 ℃/W R θ JA Junction-to-Ambient 62.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=7.1A, Start TJ=25℃ a3 ：ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2018V01 CS4N60F A9R R ○ Characteristics Curve： 40 10 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse 0 .1 0 .0 1 1 1ms 10ms PD , Power Dissipation ，Watts Id , Drain Current , Amps 100 30 20 10 DC 0 10 100 V d s , D r a in - t o - S o u r c e V o lta g e , V o lts 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 25 50 100 75 TC , Case Temperature , C 125 150 Figure 2 Maximum Power Dissipation vs Case Temperature 6 8 5 Id , Drain Current , Amps Id , Drain Current , Amps 250us Pluse Test Tc = 25℃ 4 3 2 VGS=10V 6 VGS=6V 4 VGS=4.5V VGS=5V VGS=4V 2 1 0 0 0 25 75 100 125 50 TC , C ase Tem perature , C 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2018V01 25 CS4N60F A9R 8 Isd, Reverse Drain Current , Amps Id , Drain Current , Amps 9 250us Pulse Test VDS=20V 7.5 6 4.5 +25℃ 3 +150℃ 1.5 0 7 6 5 4 +150℃ 3 +25℃ 2 1 0 2 4 6 8 Vgs , Gate to Source Voltage , Volts 10 0 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 1.2 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Nomalized 3.5 Rds(on), Drain to Source ON Resistance, Ohms R ○ PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 3.1 VGS=10V 2.7 2.3 1.9 2.5 2.25 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=2A 2 1.75 1.5 1.25 1 0.75 0.5 0 1 2 3 Id , Drain Current , Amps Figure 8 Typical Drain to Source ON Resistance vs Drain Current 4 -50 0 50 100 Tj, Junction temperature , C Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2018V01 150 CS4N60F A9R 1.15 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.15 1.05 1 0.95 0.9 VGS=0V ID=250μA 0.85 0.8 0.75 1.05 VGS=0V ID=250μA 0.95 0.85 0.7 0.65 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 10 Typical Theshold Voltage vs Junction Temperature 0.75 -55 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 12 Ciss 100 Coss VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Vgs , Gate to Source Voltage ,Volts 1000 10 -30 Figure 11 Typical Breakdown Voltage vs Junction Temperature 10000 Capacitance , pF R ○ 10 VDS=480V VDS=300V VDS=120V 8 6 4 2 Crss ID=4A 0 1 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 Figure 12 Typical Capacitance vs Drain to Source Voltage 0 3 6 9 Qg , Total Gate Charge , nC 12 15 Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2018V01 CS4N60F A9R R ○ Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2018V01 CS4N60F A9R Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 8 of 1 0 2018V01 CS4N60F A9R R ○ Package Information C A D B1 B Q ΦP H G L C1 E F N Items N Values(mm) MIN MAX A 9.60 10.4 B 15.4 16.2 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 3.40 3.80 1.60 2.90 L* 12.0 14.0 N 2.34 2.74 Q 3.15 3.55 2.90 3.30 H *adjustable TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2018V01 CS4N60F A9R R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 10 of 1 0 2 0 1 8 V0 1