Silicon
N-Channel
Power MOSFET
R
○
CS4N65 A8HD
0General Description:
650
V
ID
4
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(T C=25℃)
75
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2
Ω
CS4N65 A8HD, the silicon N-channel Enhanced
VDSS
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge
(Typical Data:14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
Drain-to-Source Voltage
Rating
Units
650
V
4
A
3.2
A
16
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
150
mJ
Avalanche Energy ,Repetitive
30
mJ
Avalanche Current
2.5
A
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation
75
W
Derating Factor above 25°C
0.60
W/℃
VESD(G-S)
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
3000
V
TJ,T stg
Operating Junction and Storage Temperature Range
150,–55 to 150
℃
TL
Maximum Temperature for Soldering
300
℃
Continuous Drain Current
ID
IDM
Continuous Drain Current T C = 100 °C
a1
Pulsed Drain Current
VGS
a2
EAS
EAR
IAR
a1
a1
dv/dt
a3
PD
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 1 of 1 0
2 0 1 5 V0 1
CS4N65 A8HD
R
○
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID =250µA
ΔBVDSS/ΔT J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
IDSS
Drain to Source Leakage Current
VDS =650V, V GS= 0V,
Ta = 25℃
VDS =520V, V GS= 0V,
Ta = 125℃
IGSS(F)
Gate to Source Forward Leakage
IGSS(R)
Gate to Source Reverse Leakage
Rating
Unit
s
Min.
Typ.
Max.
650
--
--
V
--
0.67
--
V/℃
--
--
1
µA
--
--
100
µA
VGS =+20V
--
--
10
µA
VGS =-20V
--
--
-10
µA
ON Characteristics
Symbol
Parameter
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =2A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250µA
Rating
Test Conditions
Units
Min.
Typ.
Max.
--
2
2.5
Ω
4.0
V
2.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Trans conductance
VDS=15V, ID =2A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
3.5
--
--
544
--
55
--
8.5
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =4A VDD = 325V
RG =12Ω
ID =4A V DD =325V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
10
--
--
11
--
--
31
--
--
16
--
--
14.5
--
3
--
6
Pag e 2 of 1 0
Units
ns
nC
2 0 1 5 V0 1
CS4N65 A8HD
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Maximum Pulsed Current (Body Diode)
VSD
Diode Forward Voltage
IS =4.0A,VGS =0V
trr
Reverse Recovery Time
IS =4.0A,Tj = 25°C
Qrr
Reverse Recovery Charge
dIF /dt=100A/us,
VGS=0V
Rating
Test Conditions
Units
Min.
Typ.
Max.
--
--
4
A
--
--
16
A
--
--
1.5
V
--
465
--
ns
--
1.7
--
µC
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
Typ.
Units
R θ JC
Junction-to-Case
1.67
℃/W
R θ JA
Junction-to-Ambient
62.5
℃/W
Gate-source Zener diode
Symbol
Parameter
V GSO
Gate-source breakdown voltage
Test Conditions
I GS = ±1mA(Open Drain)
Rating
Min.
Typ.
Max.
Units
30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=10mH, ID=5.5A, Start TJ=25℃
a3
:ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 3 of 1 0
2 0 1 5 V0 1
CS4N65 A8HD
R
○
Characteristics Curve:
100
PD , Power Dissipation ,Watts
Id , Drain Current , Amps
80
10
1ms
1
10ms
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
0 .1
DC
100ms
70
60
50
40
30
20
10
0 .0 1
1
10
100
V d s , D rain -to -S o u rc e V o ltag e , V o lts
0
1000
0
Figure 1 Maximum Forward Bias Safe Operating Area
50
100
75
TC , Case Temperature , C
6
Id , Drain Current , Amps
5
4
3
2
125
150
Figure 2 Maximum Power Dissipation vs Case Temperature
6
Id , Drain Current , Amps
25
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
4.5
VGS=7V
3
VGS=6V
VGS=6.5V
1.5
VGS=4.5V
VGS=5.5V
1
0
0
0
25
75
100
125
50
TC , Case Tem perature , C
150
Figure 3 Maximum Continuous Drain Current vs Case Temperature
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 4 Typical Output Characteristics
Thermal Impedance, Normalized
1
50%
20%
0.1 10%
5%
PDM
2%
0.01
Single pulse
0.001
0.00001
t1
t2
1%
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
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CS4N65 A8HD
R
○
100
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
Idm , Peak Current , Amps
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
150 − TC
I = I 25
125
10
1
1.00E-05
1.00E-04
1.00E-03
7.5
Rds(on), Drain to Source ON
Resistance , Ohms
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
VDS=30V
6
4.5
3
-55℃
+25℃
1.5
+150℃
0
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
5
4
ID= 4A
ID= 2A
3
ID= 1A
2
1
0
2
3
4
5
Vgs , Gate to Source Voltage , Volts
6
Figure 7 Typical Transfer Characteristics
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
2.5
VGS=20V
2
4
8
10
12
14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
3
Rds(on), Drain to Source ON
Resistance, Ohms
1.00E-01
Figure 6 Maximun Peak Current Capability
6
9
Id , Drain Current , Amps
1.00E-02
t ,Pulse Width , Seconds
1.5
6
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
1.75
1.5
1.25
1
0.75
0.5
1
0
1
2
3
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
-50
0
50
100
Tj, Junction temperature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 5 of 1 0
2 0 1 5 V0 1
150
CS4N65 A8HD
1.1
1.1
Bvdss,Drain to Source
Breakdown Voltage, Normalized
Vgs(th),Threshold Voltage, Nomalized
1.15
1.05
1
0.95
0.9
0.85
0.8
0.75
VGS=0V
ID=250μA
0.7
0.65
-75
-50
-25
0
25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature
1.05
1
0.95
-30
-5
20
45
70
95
120
Tj, Junction temperature , C
145
170
Figure 12 Typical Breakdown Voltage vs Junction Temperature
Vgs , Gate to Source Voltage ,Volts
12
1000
Capacitance , pF
VGS=0V
ID=250μA
0.9
-55
10000
Ciss
100
Coss
Crss
10
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
1
VDS=180V
10
VDS=360V
VDS=480V
8
6
4
2
ID=2A
0
0.1
1
10
Vds , Drain - Source Voltage , Volts
100
0
Figure 13 Typical Capacitance vs Drain to Source Voltage
8
2
4
6
8
10 12 14
Qg , Total Gate Charge , nC
16
18
20
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
7
Id , Drain Current , Amps
Isd, Reverse Drain Current , Amps
R
○
6
5
4
3
+150℃
2
+25℃
0
0
0.2
STARTING Tj = 150℃
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
-55℃
1
STARTING Tj = 25℃
10
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
Figure 15 Typical Body Diode Transfer Characteristics
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
tav,Time in Avalanche,Seconds
Figure 16 Unclamped Inductive Switching Capability
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 6 of 1 0
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CS4N65 A8HD
R
○
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 7 of 1 0
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CS4N65 A8HD
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
R
○
Pag e 8 of 1 0
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CS4N65 A8HD
R
○
Package Information:
Items
Values(mm)
MIN
MAX
A
10.00
10.60
B
15.0
16.0
B1
8.90
9.50
C
4.30
4.80
C1
2.30
3.10
D
1.20
1.40
E
0.70
0.90
F
0.30
0.60
G
1.17
1.37
H
3.30
3.80
L
12.7
14.7
N
2.34
2.74
Q
2.40
3.00
3.50
3.90
TO-220AB Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
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The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb
≤0.1%
Limit
Hg
Cd
≤0.1%
≤0.01%
Cr(VI)
≤0.1%
PBB
≤0.1%
PBDE
≤0.1%
Lead Frame
○
○
○
○
○
○
Molding Compound
○
○
○
○
○
○
Chip
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
Solder
×
○
○
○
○
○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
Note
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China
Marketing Part:
Mail:214061
http://www. crhj.com.cn
Tel: 0510-85807228 Fax: 0510-85800864
Post:214061 Tel / Fax:0510-85807228-3663/5508
E-mail:sales@crhj.com.cn 0510-85800360(Fax)
Application and Service:Post:214061 Tel / Fax:0510-85807228-3399 / 2227
E-mail:apply@crhj.com.cn
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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