Silicon
N-Channel
Power MOSFET
R
○
CS4N70F A9R
General Description:
700
V
ID
4
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
30
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.55
Ω
CS4N70F A9R, the silicon N-channel Enhanced
VDSS
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω)
l Low Gate Charge
(Typical Data:12.7nC)
l Low Reverse transfer capacitances(Typical:2.7pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VDSS
Drain-to-Source Voltage
Rating
Units
700
V
4
A
Continuous Drain Current T C = 100 °C
2.5
A
Pulsed Drain Current
28
A
Gate-to-Source Voltage
±30
V
Single Pulse Avalanche Energy
196
mJ
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation
30
W
0.24
W/℃
150,–55 to 150
℃
300
℃
Continuous Drain Current
ID
IDM
a1
VGS
EAS
a2
dv/dt
a3
PD
Derating Factor above 25°C
TJ,T stg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
R
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Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID =250µA
ΔBVDSS/ΔT J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
IDSS
Drain to Source Leakage Current
VDS =700V, V GS= 0V,
Ta = 25℃
VDS =560V, V GS= 0V,
Ta = 125℃
IGSS(F)
Gate to Source Forward Leakage
IGSS(R)
Gate to Source Reverse Leakage
Rating
Units
Min.
Typ.
Max.
700
--
--
--
0.7
--
V/℃
--
--
1
µA
--
--
100
µA
VGS =+30V
--
--
100
nA
VGS =-30V
--
--
-100
nA
V
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =2A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250µA
Rating
Units
Min.
Typ.
Max.
--
2.55
3.0
Ω
2.0
--
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Transconductance
VDS=15V, ID =2A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
--
3.7
--
--
606
--
--
48
--
--
2.7
--
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
ID =4A VDD = 350V
RG =10Ω
ID =4A VDD =560V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
14
--
--
15
--
--
30
--
--
9
--
--
12.7
--
--
3.0
--
--
5.1
--
Pag e 2 of 1 0
Units
2 0 1 7 V0 1
ns
nC
CS4N70F A9R
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Test
Conditions
Rating
Units
Min.
Typ.
Max.
Continuous Source Current (Body Diode)
--
--
4
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
16
A
VSD
Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
325.3
--
ns
--
1470
--
nC
--
9.0
--
A
IS =4A,V GS =0V
IS =4A,Tj = 25℃
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
dIF /dt=100A/us,
VGS =0V
Pulse width tp≤300µs,δ≤2%
Symbol
Parameter
Max.
Units
R θ JC
Junction-to-Case
4.17
℃/W
R θ JA
Junction-to-Ambient
62.5
℃/W
a1
:Repetitive rating; pulse width limited by maximum junction temperature
:L=10mH, ID=6.3A, Start TJ=25℃
a3
:ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
R
○
Characteristics Curve:
Figure 1 Maximum Forward Bias Safe Operating Area
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 2 Maximum Power dissipation vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
Figure 6 Typical Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
R
○
Figure 7 Typical Body Diode Transfer Characteristics
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
Figure 10 Typical Theshold Voltage vs Junction Temperature
Figure 12 Typical Capacitance vs Drain to Source Voltage
R
○
Figure 11 Typical Breakdown Voltage vs Junction Temperature
Figure 13 Typical Gate Charge vs Gate to Source Voltage
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
R
○
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS4N70F A9R
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
R
○
Pag e 8 of 1 0
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CS4N70F A9R
R
○
Package Information:
Items
Values(mm)
MIN
MAX
A
9.60
10.4
B
15.4
16.2
B1
8.90
9.50
C
4.30
4.90
C1
2.10
3.00
D
2.40
3.00
E
0.60
1.00
F
0.30
0.60
G
1.12
1.42
3.40
3.80
1.60
2.90
L*
12.0
14.0
N
2.34
2.74
Q
3.15
3.55
2.90
3.30
H
*:adjustable
TO-220F Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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R
○
The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
≤
≤
≤
0.1%
0.1%
0.01%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
≤0.1%
Lead Frame
○
○
○
○
○
○
○
○
○
○
Molding
○
○
○
○
○
○
○
○
○
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Chip
○
○
○
○
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
○
○
○
○
Solder
×
○
○
○
○
○
○
○
○
○
Limit
○:Means the hazardous material is under the criterion of 2011/65/EU.
Note
×:Means the hazardous material exceeds the criterion of 2011/65/EU.
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part:
Post:214061
UTH
Tel: +86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
E-mail:sales@hj.crmicro.com
Application and Service:Post:214061 Tel / Fax:+86- 0510-81805243/81805110
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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