CS4N80A3HD-G

Silicon N-Channel Power MOSFET R ○ CS4N80 A3HD-G General Description ： CS4N80 A3HD-G, the silicon N-channel Enhanced VDSS 800 V 4 A ID VDMOSFETs, is obtained by the self-aligned planar Technology P D(TC=25℃) 100 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.2 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features：  Fast Switching  ESD Improved Capability  Low Gate Charge (Typical Data: 25nC)  Low Reverse transfer capacitances(Typical:7.5pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 800 V 4 A 2.5 A 16 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 230 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 100 W Derating Factor above 25°C 0.8 W/℃ 4000 V 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 Pulsed Drain Current IDM VGS EAS a2 dv/dt a3 PD VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) TJ，Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =800V, VGS= 0V, Ta = 25℃ VDS =640V, VGS= 0V, Ta = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 800 -- -- -- 0.9 -- V/℃ -- -- 25 µA -- -- 250 µA VGS =+20V -- -- 10 µA VGS =-20V -- -- -10 µA V ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=2A VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA Rating Units Min. Typ. Max. -- 2.2 2.8 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions gfs Forward Transconductance VDS=15V, ID =2A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 5.5 -- -- 865 -- -- 82 -- -- 7.5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =4A VDD = 400V R G =10Ω ID =4A VDD =640V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 18 -- -- 16 -- -- 45 -- -- 14 -- -- 25 -- -- 4 -- -- 11.5 -- P ag e 2 of 10 Units ns nC 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 4 A ISM Maximum Pulsed Current (Body Diode) -- -- 16 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 274 -- ns Qrr Reverse Recovery Charge -- 1150 -- nC IRRM Reverse Recovery Current -- 8.4 -- A IS=4.0A,VGS=0V IS=4.0A,Tj = 25℃ dIF/dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units Rθ JC Junction-to-Case 1.25 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, I D=6.8A, Start TJ =25℃ a3 ：ISD =4A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 3 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ Characteristics Curve： 120 PD , Power Dissipation ，Watts Id , Drain Current , Amps 100 10 100us 1 1ms 0.1 0.01 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse DC 10ms 60 30 0 10 100 Vds , Drain-to-Source Voltage , Volts 0 1000 Figure 1 Maximum Forward Bias Safe Operating Area 25 50 75 100 TC , Case Temperature , C 8 Id , Drain Current , Amps 3 2 150 250us Pluse Test Tc = 25℃ 5 4 125 Figure 2 Maximum Power Dissipation vs Case Temperature 6 Id , Drain Current , Amps 90 VGS=10V 6 VGS=6V 4 VGS=4.5V VGS=5V VGS=4V 2 1 0 0 0 25 75 100 125 50 TC , Case Temperature , C 150 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 4 of 10 2 0 1 6 V0 1 25 CS4N80 A3HD-G 8 Isd, Reverse Drain Current , Amps Id , Drain Current , Amps 9 250us Pulse Test VDS=20V 7.5 6 4.5 +25℃ 3 +150℃ 1.5 0 7 6 5 4 +150℃ 3 +25℃ 2 1 0 2 4 6 8 Vgs , Gate to Source Voltage , Volts 10 0 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 1.2 Figure 7 Typical Body Diode Transfer Characteristics Figure 6 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Nomalized 3.5 Rds(on), Drain to Source ON Resistance, Ohms R ○ PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX Tc =25 ℃ 3.1 VGS=10V 2.7 2.3 1.9 2.5 PULSE DURATION = 10μs DUTY CYCLE= 0.5%MAX VGS=10V ID=2A 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0 1 2 3 Id , Drain Current , Amps Figure 8 Typical Drain to Source ON Resistance vs Drain Current 4 -50 0 50 100 Tj, Junction temperature , C Figure 9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 5 of 10 2 0 1 6 V0 1 150 CS4N80 A3HD-G 1.15 1.15 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized 1.05 1 0.95 0.9 VGS=0V ID=250μA 0.85 0.8 0.75 1.05 VGS=0V ID=250μA 0.95 0.85 0.7 0.65 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , C Figure 10 Typical Theshold Voltage vs Junction Temperature 0.75 -55 -30 -5 20 45 70 95 120 Tj, Junction temperature , C 145 170 Figure 11 Typical Breakdown Voltage vs Junction Temperature 12 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Vgs , Gate to Source Voltage ,Volts Vgs(th),Threshold Voltage, Nomalized R ○ 10 VDS=640V VDS=400V VDS=240V 8 6 4 2 ID=4A 0 0 Figure 12 Typical Capacitance vs Drain to Source Voltage 5 10 15 Qg , Total Gate Charge , nC 20 25 Figure 13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 6 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 7 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ P ag e 8 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ Package Information Values(mm) Items MIN MAX A 6.30 6.90 B 5.20 6.30 B1 0.70 1.30 B2 6.80 7.40 C 2.10 2.50 D 0.30 0.60 E 0.50 0.86 F 0.30 0.60 G 0.70 1.00 H 1.40 2.40 L* 7.50 9.80 M 5.10 5.50 N 2.09 2.49 *：adjustable TO-251 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 9 of 10 2 0 1 6 V0 1 CS4N80 A3HD-G R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Pb Hg ≤0.1% ≤0.1% Lead Frame ○ ○ Molding ○ Compound Chip Limit Cd ≤ 0.01% ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 6 V0 1