CS55N06A4

Silicon N-Channel Power Trench MOSFET R ○ CS55N06 A4 General Description： CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology VDSS 60 V ID 55 A RDS(ON)Typ 10 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute （T J= 25℃ unless otherwise specified）： Symbol Parameter VDSS Rating Units Drain-to-Source Voltage 60 V Continuous Drain Current T C = 25 °C 55 A Continuous Drain Current T C = 100 °C 38 A Pulsed Drain Current T C = 25 °C 220 A Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 135 mJ PD Power Dissipation T C = 25 °C 69.5 W TJ ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ ID IDM a1 VGS EAS a2 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2 0 1 9 V0 1 CS55N06 A4 R ○ Electrical Characteristics（T J= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V,ID =250µA Drain to Source Leakage Current VDS = 60V, V GS= 0V, TJ = 25℃ VDS =48V, V GS= 0V, IDSS Rating Min. Typ. Max. 60 -- -- -- -- 1 TJ = 125℃ -- -- 100 Units V µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter R DS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Test Conditions Rating Units Min. Typ. Max. VGS=10V,ID =20A -- 10 13 mΩ VGS=4.5V,ID =20A -- 13 16 mΩ 0.9 1.4 1.9 VDS = V GS , ID = 250µA V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rg Gate resistance VGS=0V, VDS=0V, f=1MHz C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VDS=30V, VGS=0V, f=1.0MHz Rating Min. Typ. Max. -- 2.4 -- -- 2370 -- -- 164 -- -- 123 -- Units Ω pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions VDD =30V, ID =10A, RG = 3Ω, VGS =10V VDS =30V, ID =20A, VGS =10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 13.1 -- -- 25.1 -- -- 60.8 -- -- 9.0 -- -- 50.7 -- 7.0 -- -- 12.3 -- Pag e 2 of 10 Units 2 0 1 9 V0 1 ns nC CS55N06 A4 R ○ Source-Drain Diode Characteristics Symbol Parameter Test Conditions VSD Diode Forward Voltage trr Qrr Rating Min. Typ. IS =20A,V GS=0V -- -- Reverse Recovery Time V GS=0V, -- Reverse Recovery Charge IS =20A, -- Max. Units 1.2 V 22 -- ns 19.5 -- nC di/dt=100A/us Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. R θ JC Junction-to-Case 1.8 ℃/W R θ JA Junction-to-Ambient 100 ℃/W Units Notes： a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：Vdd=25V，L=1mH, ID=17A, Start TJ =25℃ a3 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 a2 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2019V01 CS55N06 A4 R ○ Characteristics Curve： 100 80 VGS =4.5,5,6,10V 70 PULSED TEST VDS = 20V 250μs PULSE TEST 60 40 V GS = 3.5V 30 10 I D,Drain Current,A I D ,Drain Current,A V GS = 4.0V 50 20 150℃ 1 25℃ V GS = 3V 10 0 0.1 0 1 2 3 4 VDS,Drain-to-Source Voltage,V 5 1 Figure 1. Output Characteristics 2 3 4 VGS,Gate-to-Source Voltage,V 5 Figure 2.Transfer Characteristics 12 VGS = 4.5V 11 10 V GS = 10V 9 PULSED TEST Tj = 25℃ 8 150℃ 1 25℃ 0.1 0 10 20 I D,Drain Current,A 30 Figure 3. Drain-to-Source On Resistance vs Drain Current 0.2 12 Coss f = 1MHz 1000 Ciss = Cgs +Cgd Coss = Cds +Cgd Crss 100 V GS,Gate-to-Source Voltage,V C iss 0.4 0.6 0.8 VSD ,Source-to-Drain Voltage,V 1 Figure 4. Typical Body Diode Transfer Characteristics 10000 Capacitance,pF PULSED TEST V GS = 0V 10 13 I SD ,Reverse Drain Current,A RDS(on), Drain-to-Source On Resistance,mΩ 14 V DS = 30V ID = 20A 10 8 6 4 2 0 0.1 1 10 100 VDS,Drain-to-Source Voltage,V Figure 5. Capacitance Characteristics 0 10 20 30 40 50 QG,Total Gate Charge,nC 60 Figure 6. Gate Charge Characteristics WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2019V01 CS55N06 A4 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. R ○ Page 5 of 10 2 0 1 9 V0 1 CS55N06 A4 50 1.2 PULSED TEST 35 150℃ 25 20 15 25℃ 10 5 0 2.00 4.00 6.00 8.00 10.00 VGS,Gate-to-Source Voltage,V Figure 12. Drain-to-Source On Resistance vs Gate Voltage and Drain Current VGS = VDS 1.1 ID =20A 40 VGS(th),(Normalized) Threshold Voltage RDS(on),Drain-to-Source On Resistance,mΩ 45 30 R ○ 1 0.9 0.8 0.7 0.6 -75 -25 25 75 125 175 TJ,Junction Temperature(℃ ) Figure 13. Normalized Threshold Voltage vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2019V01 CS55N06 A4 R ○ Test Circuit and Waveform： Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2 0 1 9 V0 1 CS55N06 A4 Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit R ○ Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2019V01 CS55N06 A4 R ○ Package Information： Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.16 B 5.70 6.30 C 2.10 2.50 D 0.30 0.70 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.40 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2019V01 CS55N06 A4 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the staticelectricity, it is necessary to protect the device from being damaged by thestaticelectricity when using it. This publication is made by Huajing Microelectronics and subject to regularchange without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, ChinaMail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2 0 1 9 V0 1