CS5N20A3

Silicon N-Channel Power MOSFET R ○ CS5N20 A3 General Description： VDSS 200 V ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω CS5N20 A3, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of Video doorphone. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM a1 VGS a2 EAS EAR IAR a1 a1 dv/dt a3 Rating Units Drain-to-Source Voltage 200 V Continuous Drain Current 4.8 A Continuous Drain Current T C = 100 °C 3.4 A Pulsed Drain Current 19.2 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 125 mJ Avalanche Energy ,Repetitive 12 mJ Avalanche Current 1.6 A 5 V/ns 40 W 0.32 W/℃ 150，–55 to 150 ℃ 300 ℃ Peak Diode Recovery dv/dt Power Dissipation PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 5 V0 1 CS5N20 A3 R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient IDSS Drain to Source Leakage Current IGSS(F) IGSS(R) Rating Units Min. Typ. Max. 200 -- -- ID=250uA,Reference25℃ -- 0.26 -- VDS = 200V, V GS= 0V, Ta = 25℃ VDS =160V, V GS= 0V, Ta = 125℃ -- -- 1 Gate to Source Forward Leakage VGS= 30V -- -- 100 nA Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA V V/℃ µA 10 ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =2.9A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.49 0.65 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=15V, ID =2.9A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. 2.0 -- -- 255 -- 52 -- 8 Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =4.8A VDD = 100V VGS = 10V RG = 10Ω ID =4.8A V DD =100V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 7 -- -- 13 -- -- 27 -- -- 11 -- -- 7 -- 2 -- 3 Page 2 of 10 Units ns nC 2 0 1 5 V0 1 CS5N20 A3 R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Rating Test Conditions IS =1.8A,V GS =0V IS =4.8A,Tj = 25°C dIF /dt=100A/us, VGS=0V Units Min. Typ. Max. -- -- 4.8 A -- -- 19.2 A -- -- 1.5 V -- 105 -- ns -- 380 -- nC -- 7.2 -- A Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. Units R θJC Junction-to-Case 3.13 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=5A, Start TJ=25℃ a3 ：ISD =4.8A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 of 1 0 2015V01 CS5N20 A3 R ○ Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2015V01 CS5N20 A3 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ P a g e 5 of 1 0 2015V01 CS5N20 A3 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 6 of 1 0 2015V01 CS5N20 A3 R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 of 1 0 2015V01 CS5N20 A3 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Pag e 8 of 1 0 2015V01 CS5N20 A3 R ○ Package Information Items A B B1 B2 C D E F G H L M N Values(mm) MIN 6.30 5.70 1.00 6.80 2.10 0.30 0.50 0.30 0.70 1.60 7.70 5.90 4.40 2.10 5.10 2.09 MAX 6.90 6.30 1.20 7.40 2.50 0.60 0.70 0.60 1.00 2.40 9.80 6.50 5.80 3.90 5.50 2.49 TO-251 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 of 1 0 2015V01 CS5N20 A3 R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2 0 1 5 V0 1