CS630A4H

Silicon N-Channel Power MOSFET R ○ CS630 A4H General Description： 200 V ID 9 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 83 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω CS630 A4H, the silicon VDSS N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 200 V 9 A 5.5 A 36 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 460 mJ Avalanche Energy ,Repetitive 50 mJ Avalanche Current 3.2 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 83 W 0.67 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID IDM Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 5 V0 1 CS630 A4H R ○ Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Min. Typ. Max. 200 -- -- ID=250uA,Reference25℃ -- 0.21 -- VDS = 200V, V GS= 0V, Ta = 25℃ VDS =160V, V GS= 0V, -- -- 1 Ta = 125℃ -- -- 100 Units V V/℃ µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5.4A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 0.23 0.28 Ω 4.0 V 2.0 Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Trans conductance VDS=25V, ID =5.4A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 9.5 -- -- 600 -- -- 90 -- -- 10 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =9A VDD = 100V VGS = 10V RG =12Ω ID =9A V DD =100V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 10 -- -- 21 -- -- 24 -- -- 17 -- -- 13 -- 4 -- -- 4.5 -- Page 2 of 10 Units ns nC 2 0 1 5 V0 1 CS630 A4H R ○ Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Maximum Pulsed Current (Body Diode) VSD Diode Forward Voltage IS =9A,V GS =0V trr Reverse Recovery Time IS =9A,Tj = 25°C Qrr Reverse Recovery Charge dIF /dt=100A/us, V GS=0V Rating Test Conditions Units Min. Typ. Max. -- -- 9 A -- -- 36 A -- -- 1.5 -- 120 ns -- 495 nC V Pulse width tp≤300µs,δ≤2% Symbol Parameter Typ. R θJC Junction-to-Case 1.51 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W Units a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=9.6A, Start T J =25℃ a3 ：ISD =9A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 5 V0 1 CS630 A4H R ○ Characteristics Curve： W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 1 0 2 0 1 5 V0 1 CS630 A4H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Page 5 of 10 2 0 1 5 V0 1 CS630 A4H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Page 6 of 1 0 2 0 1 5 V0 1 CS630 A4H R ○ Test Circuit and Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 5 V0 1 CS630 A4H W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . R ○ Page 8 of 1 0 2 0 1 5 V0 1 CS630 A4H R ○ Package Information Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.00 L1 9.60 10.30 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 5 V0 1 CS630 A4H R ○ The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Limit Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2015V01